Abstract: An electronic component includes a substrate; a stack of two layers of different semiconductor materials, designed to form a layer of electron gas at the interface thereof or close to same; and a buried barrier forming a separation between the substrate and said stack. The buried barrier includes a first layer of a ternary alloy of semiconductor material of the III-N type, having an increasing concentration of one of the chemical species of the ternary alloy of the first layer the closer it is to the substrate; and a second layer of a ternary alloy of semiconductor material of the III-N type, formed beneath the first layer and having a decreasing concentration of one of the chemical species of the ternary alloy of the first layer the closer it is to the substrate.

Abstract: A semiconductor device is provided, including two semiconductor nanowires superimposed one on top of the other or arranged next to one another, spaced one from the other and forming channel regions of the semiconductor device, a dielectric structure entirely filling a space between the nanowires and which is in contact with the nanowires, a gate dielectric and a gate covering a first of the nanowires, sidewalls of the nanowires and sidewalls of the dielectric structure when the nanowires are superimposed one on top of the other, or covering a part of the upper faces of the nanowires and a part of an upper face of the dielectric structure when the nanowires are arranged next to one another, and wherein the dielectric structure comprises a portion of dielectric material with a relative permittivity greater than or equal to 20.

Abstract: A semiconductor device is provided, including two semiconductor nanowires superimposed one on top of the other or arranged next to one another, spaced one from the other and forming channel regions of the semiconductor device, a dielectric structure entirely filling a space between the nanowires and which is in contact with the nanowires, a gate dielectric and a gate covering a first of the nanowires, sidewalls of the nanowires and sidewalls of the dielectric structure when the nanowires are superimposed one on top of the other, or covering a part of the upper faces of the nanowires and a part of an upper face of the dielectric structure when the nanowires are arranged next to one another, and wherein the dielectric structure comprises a portion of dielectric material with a relative permittivity greater than or equal to 20.