Abstract: A bonding contact area on a semiconductor substrate is provided that includes a reinforcing structure having at least one conductive material layer arranged on the semiconductor substrate to receive the patterned reinforcing structure, a metal layer formed as a bonding contact layer with a bonding surface and arranged on a conductive material layer. Whereby, below the bonding surface, an oxide layer having at least about a 2 ?m thickness is arranged, which extends beyond the edge of the bonding surface. The reinforcing structure is arranged in the oxide layer, when viewed looking down onto the bonding surface, outside the bonding surface within the oxide layer.

Abstract: A semiconductor housing is provided that includes a metal support and a semiconductor body, a bottom side thereof being connected to the metal support. The semiconductor body has metal surfaces that are connected to pins by bond wires and a plastic compound, which completely surrounds the bond wires and partially surrounds the semiconductor body. The plastic compound has an opening on the top side of the semiconductor body, and a barrier is formed on the top side of the semiconductor body. The barrier has a top area and a base area spaced from the edges of the semiconductor body and an internal clearance of the barrier determines a size of the opening. Whereby, a portion of the plastic compound has a height greater than the barrier, and a fixing layer is formed between the base area of the barrier and the top side of the semiconductor body.

Abstract: A semiconductor housing is provided that includes a metal support and a semiconductor body, a bottom side thereof being connected to the metal support. The semiconductor body has metal surfaces that are connected to pins by bond wires and a plastic compound, which completely surrounds the bond wires and partially surrounds the semiconductor body. The plastic compound has an opening on the top side of the semiconductor body, and a barrier is formed on the top side of the semiconductor body. The barrier has a top area and a base area spaced from the edges of the semiconductor body and an internal clearance of the barrier determines a size of the opening. Whereby, a portion of the plastic compound has a height greater than the barrier, and a fixing layer is formed between the base area of the barrier and the top side of the semiconductor body.

Abstract: A semiconductor housing is provided that includes a metal support and a semiconductor body, a bottom side thereof being connected to the metal support. The semiconductor body has metal surfaces that are connected to pins by bond wires and a plastic compound, which completely surrounds the bond wires and partially surrounds the semiconductor body. The plastic compound has an opening on the top side of the semiconductor body, and a barrier is formed on the top side of the semiconductor body. The barrier has a top area and a base area spaced from the edges of the semiconductor body and an internal clearance of the barrier determines a size of the opening. Whereby, a portion of the plastic compound has a height greater than the barrier, and a fixing layer is formed between the base area of the barrier and the top side of the semiconductor body.

Abstract: A bonding contact area on a semiconductor substrate is provided that includes a reinforcing structure having at least one conductive material layer arranged on the semiconductor substrate to receive the patterned reinforcing structure, a metal layer formed as a bonding contact layer with a bonding surface and arranged on a conductive material layer. Whereby, below the bonding surface, an oxide layer having at least about a 2 ?m thickness is arranged, which extends beyond the edge of the bonding surface. The reinforcing structure is arranged in the oxide layer, when viewed looking down onto the bonding surface, outside the bonding surface within the oxide layer.

Abstract: A semiconductor housing is provided that includes a metal support and a semiconductor body, a bottom side thereof being connected to the metal support. The semiconductor body has metal surfaces that are connected to pins by bond wires and a plastic compound, which completely surrounds the bond wires and partially surrounds the semiconductor body. The plastic compound has an opening on the top side of the semiconductor body, and a barrier is formed on the top side of the semiconductor body. The barrier has a top area and a base area spaced from the edges of the semiconductor body and an internal clearance of the barrier determines a size of the opening. Whereby, a portion of the plastic compound has a height greater than the barrier, and a fixing layer is formed between the base area of the barrier and the top side of the semiconductor body.

Abstract: A semiconductor arrangement includes first and second integrated circuits (dies), an electrically conductive intermediate element, and one or more bond conductors. The first and the second integrated circuits are arranged in a package. The first integrated circuit has a first contact pad. The second integrated circuit has a second contact pad. The intermediate element is disposed on the second contact pad. The conductors electrically connect the first and the second integrated circuits. At least one of the bond conductors has a first end electrically connected to the first contact pad, and a second wedge shaped end electrically connected to the intermediate element. The bond conductor is made of a first material and the intermediate element is made of a second material which is softer than the first material.

Abstract: A semiconductor arrangement includes first and second integrated circuits (dies), an electrically conductive intermediate element, and one or more bond conductors. The first and the second integrated circuits are arranged in a package. The first integrated circuit has a first contact pad. The second integrated circuit has a second contact pad. The intermediate element is disposed on the second contact pad. The conductors electrically connect the first and the second integrated circuits. At least one of the bond conductors has a first end electrically connected to the first contact pad, and a second wedge shaped end electrically connected to the intermediate element. The bond conductor is made of a first material and the intermediate element is made of a second material which is softer than the first material.