Abstract: The publication discloses a method for determining a temperature of a substrate, comprising: providing a gas channel that is confined by at least one wall having a certain wall temperature; providing a substrate in said gas channel, proximate to the at least one wall, such that a gap exists between a surface of the substrate and the at least one wall; providing a gas flow with a certain mass flow rate through said gas channel, which gas flow extends at least partially through said gap; determining a pressure drop in the gas flow along the gas channel; and deriving from said pressure drop the temperature of said substrate using a pre-determined relation between the pressure drop along the gas channel, the wall temperature and the temperature of the substrate, at said mass flow rate. Also disclosed is a device for implementing the disclosed method.

Abstract: The publication discloses a method for determining a temperature of a substrate, comprising: providing a gas channel that is confined by at least one wall having a certain wall temperature; providing a substrate in said gas channel, proximate to the at least one wall, such that a gap exists between a surface of the substrate and the at least one wall; providing a gas flow with a certain mass flow rate through said gas channel, which gas flow extends at least partially through said gap; determining a pressure drop in the gas flow along the gas channel; and deriving from said pressure drop the temperature of said substrate using a pre-determined relation between the pressure drop along the gas channel, the wall temperature and the temperature of the substrate, at said mass flow rate. Also disclosed is a device for implementing the disclosed method.

Abstract: A substrate undergoes a semiconductor fabrication process at different temperatures in a reactor without changing the temperature of the reactor. The substrate is held suspended by flowing gas between two heated surfaces of the reactor. Moving the two heated surfaces in close proximity with the substrate for a particular time duration heats the substrate to a desired temperature. The desired temperature is then maintained by distancing the heated surfaces from the substrate and holding the heated surface at the increased distance to minimize further substrate heating.

Abstract: A substrate undergoes a semiconductor fabrication process at different temperatures in a reactor without changing the temperature of the reactor. The substrate is held suspended by flowing gas between two heated surfaces of the reactor. Moving the two heated surfaces in close proximity with the substrate for a particular time duration heats the substrate to a desired temperature. The desired temperature is then maintained by distancing the heated surfaces from the substrate and holding the heated surface at the increased distance to minimize further substrate heating.