Patents by Inventor Pascale Anne Maury

Pascale Anne Maury has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method and apparatus for direct write maskless lithography
    Patent number: 10527946
    Abstract: A patterning apparatus, including: a substrate holder constructed to support a substrate; a particle generator configured to generate particles in the patterning apparatus, the particle generator configured to deposit the particles onto the substrate to form a layer of particles on the substrate; and a pattern generator in the patterning apparatus, the pattern generator configured to applying a pattern in the patterning apparatus to the deposited layer of particles.
    Type: Grant
    Filed: December 14, 2016
    Date of Patent: January 7, 2020
    Assignee: ASML NETHERLANDS B.V.
    Inventors: Pieter Willem Herman De Jager, Robert Albertus Johannes Van Der Werf, Michaël Josephus Evert Van De Moosdijk, Pascale Anne Maury
  • METHOD AND APPARATUS FOR DIRECT WRITE MASKLESS LITHOGRAPHY
    Publication number: 20190004435
    Abstract: A patterning apparatus, including: a substrate holder constructed to support a substrate; a particle generator configured to generate particles in the patterning apparatus, the particle generator configured to deposit the particles onto the substrate to form a layer of particles on the substrate; and a pattern generator in the patterning apparatus, the pattern generator configured to applying a pattern in the patterning apparatus to the deposited layer of particles.
    Type: Application
    Filed: December 14, 2016
    Publication date: January 3, 2019
    Applicant: ASML Netherlands B.V.
    Inventors: Pieter Willem Herman DE JAGER, Robert Albertus Johannes VAN DER WERF, Michaël Josephus Evert VAN DE MOOSDIJK, Pascale Anne MAURY
  • Imprint lithography apparatus and method
    Patent number: 9274418
    Abstract: An imprint lithography apparatus is disclosed that includes a first imprint template provided with pattern recesses and a second imprint template provided with pattern recesses, wherein the pattern recesses of the first imprint template are configured to form features on a substrate which interconnect laterally with features formed by the pattern recesses of the second imprint template, and wherein the pattern recesses of the second imprint template have a critical dimension which is three or more times greater than the critical dimension of the pattern recesses of the first imprint template.
    Type: Grant
    Filed: March 30, 2010
    Date of Patent: March 1, 2016
    Assignee: ASML NETHERLANDS B.V.
    Inventors: Nikolay Iosad, Pascale Anne Maury
  • Lithographic apparatus and method
    Patent number: 8576374
    Abstract: According to a first aspect of the invention, there is provided a lithographic method of providing an alignment mark on a layer provided on a substrate, the method including providing the alignment mark on an area of the layer which is oriented within a certain range of angles with respect to a surface of the substrate on which the layer is provided.
    Type: Grant
    Filed: February 26, 2009
    Date of Patent: November 5, 2013
    Assignee: ASML Netherlands B.V.
    Inventors: Keith Frank Best, Henricus Wilhelmus Maria Van Buel, Cheng-Qun Gui, Johannes Onvlee, Rudy Jan Maria Pellens, Remi Daniel Marie Edart, Oleg Viacheslavovich Voznyi, Pascale Anne Maury
  • IMPRINT LITHOGRAPHY APPARATUS AND METHOD
    Publication number: 20100252960
    Abstract: An imprint lithography apparatus is disclosed that includes a first imprint template provided with pattern recesses and a second imprint template provided with pattern recesses, wherein the pattern recesses of the first imprint template are configured to form features on a substrate which interconnect laterally with features formed by the pattern recesses of the second imprint template, and wherein the pattern recesses of the second imprint template have a critical dimension which is three or more times greater than the critical dimension of the pattern recesses of the first imprint template.
    Type: Application
    Filed: March 30, 2010
    Publication date: October 7, 2010
    Applicant: ASML Netherland B.V.
    Inventors: Nikolay Iosad, Pascale Anne Maury
  • LITHOGRAPHIC APPARATUS AND METHOD
    Publication number: 20090237635
    Abstract: According to a first aspect of the invention, there is provided a lithographic method of providing an alignment mark on a layer provided on a substrate, the method including providing the alignment mark on an area of the layer which is oriented within a certain range of angles with respect to a surface of the substrate on which the layer is provided.
    Type: Application
    Filed: February 26, 2009
    Publication date: September 24, 2009
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Keith Frank Best, Henricus Wilhelmus Maria Van Buel, Cheng-Qun Gui, Johannes Onvlee, Rudy Jan Maria Pellens, Remi Daniel Marie Edart, Oleg Viacheslavovich Voznyi, Pascale Anne Maury
  • LITHOGRAPHIC APPARATUS AND METHOD
    Publication number: 20090153825
    Abstract: A lithographic alignment apparatus includes a radiation source arranged to generate radiation at a wavelength of 1000 nanometers or longer, and a plurality of non-imaging detectors arranged to detect the radiation after the radiation has been reflected by an alignment mark.
    Type: Application
    Filed: November 19, 2008
    Publication date: June 18, 2009
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Remi Daniel Marie EDART, Franciscus Godefridus Casper Bijnen, Rudy Jan Maria Pellens, Pascale Anne Maury