Abstract: The invention relates to a method for preparing a material made of silicon and/or germanium nanowires, comprising the steps of: i) placing a source of silicon and/or a source of germanium in contact with a catalyst comprising a binary metal sulfide or a multinary metal sulfide, said metal(s) being selected from among Sn, In, Bi, Sb, Ga, Ti, Cu, and Zn, by means of which silicon and/or germanium nanowires are obtained, ii) optionally recovering the silicon and/or germanium nanowires obtained in step (i); the catalyst and, optionally, the source of silicon and/or the source of germanium being heated before, during and/or after being placed in contact under temperature and pressure conditions that allow the growth of the silicon and/or germanium nanowires.

Abstract: A method for producing a material based on silicon nanowires is provided. The method includes the steps of: i) bringing into contact, in an inert atmosphere, a sacrificial support based on a halogenide, a carbonate, a sulfate or a nitrate of an alkali metal, an alkaline earth metal or a transition metal having metal nanoparticles, with the pyrolysis vapours of a silicon source having a silane compound, by which silicon nanowires are deposited on the sacrificial support; and optionally ii) eliminating the sacrificial support and recovering the silicon nanowires produced in step ii).

Abstract: The invention relates to a method for preparing a material made of silicon and/or germanium nanowires, comprising the steps of: i) placing a source of silicon and/or a source of germanium in contact with a catalyst comprising a binary metal sulfide or a multinary metal sulfide, said metal(s) being selected from among Sn, In, Bi, Sb, Ga, Ti, Cu, and Zn, by means of which silicon and/or germanium nanowires are obtained, ii) optionally recovering the silicon and/or germanium nanowires obtained in step (i); the catalyst and, optionally, the source of silicon and/or the source of germanium being heated before, during and/or after being placed in contact under temperature and pressure conditions that allow the growth of the silicon and/or germanium nanowires.

Abstract: A device is disclosed for detecting at least one chemical compound comprising at least one carbon nanotube with several graphene layers, on which is grafted at least one molecule bearing group G1 capable of reacting with the chemical compound or a precursor of such a group G1. The uses and the method of making such a device is also disclosed.

Abstract: A method for producing a material based on silicon nanowires is provided. The method includes the steps of: i) bringing into contact, in an inert atmosphere, a sacrificial support based on a halogenide, a carbonate, a sulfate or a nitrate of an alkali metal, an alkaline earth metal or a transition metal having metal nanoparticles, with the pyrolysis vapours of a silicon source having a silane compound, by which silicon nanowires are deposited on the sacrificial support; and optionally ii) eliminating the sacrificial support and recovering the silicon nanowires produced in step ii).

Abstract: A method for separating metal carbon nanotubes with a single graphene layer (m-SWNT) and semiconductor nanotubes with a single graphene layer (sc-SWNT) is provided. The method may comprise a step for grafting, notably by radical chemical grafting, a diazonium salt derivative on a mixture of m-SWNTs and sc-SWNTs so as to obtain a mixture of grafted m-SWNTs, and non-grafted sc-SWNTs, whereby the grafted m-SWNTs and the non-grafted sc-SWNTs separate because of differential chemical and/or physical properties caused by said grafting. In addition, a kit for separating m-SWNTs and sc-SWNTs is provided.

Abstract: The present invention relates to a method for selective functionalization of metallic single-walled carbon nanotubes with a diazonium derivative. The present invention also relates to the use of the mixture of metallic single-walled carbon nanotubes selectively functionalized and to the semiconducting single-walled carbon nanotubes obtained by means of the method according to the invention, for producing transistor channels in particular in electronics, electron acceptor materials, in particular in photovoltaic systems, nonlinear infrared photon emitters or absorbers, current-conducting electrodes, flexible transparent electrodes, antistatic coatings, chemical detectors, and solar cells.

Abstract: The present invention relates to a method for selective functionalization of metallic single-walled carbon nanotubes with a diazonium derivative. The present invention also relates to the use of the mixture of metallic single-walled carbon nanotubes selectively functionalized and to the semiconducting single-walled carbon nanotubes obtained by means of the method according to the invention, for producing transistor channels in particular in electronics, electron acceptor materials, in particular in photovoltaic systems, nonlinear infrared photon emitters or absorbers, current-conducting electrodes, flexible transparent electrodes, antistatic coatings, chemical detectors, and solar cells.

Abstract: A method for separating metal carbon nanotubes with a single graphene layer (m-SWNT) and semiconductor nanotubes with a single graphene layer (sc-SWNT) is provided. The method may comprise a step for grafting, notably by radical chemical grafting, a diazonium salt derivative on a mixture of m-SWNTs and sc-SWNTs so as to obtain a mixture of grafted m-SWNTs, and non-grafted sc-SWNTs, whereby the grafted m-SWNTs and the non-grafted sc-SWNTs separate because of differential chemical and/or physical properties caused by said grafting. In addition, a kit for separating m-SWNTs and sc-SWNTs is provided.

Abstract: A device is disclosed for detecting at least one chemical compound comprising at least one carbon nanotube with several graphene layers, on which is grafted at least one molecule bearing group G1 capable of reacting with the chemical compound or a precursor of such a group G1. The uses and the method of making such a device is also disclosed.