Abstract: The disclosed method for recovering optical properties of transparent substrates may include performing a post-etching annealing process on a transparent substrate. The method may also include applying a plasma treatment to the transparent substrate, performing an atomic layer etching treatment on the transparent substrate, and/or performing a cleaning process. Various other methods, devices, and systems are also disclosed.

Abstract: A method of fabricating a surface-relief structure in a material layer (e.g., including dielectric or semiconductor material) includes forming a mask layer on the material layer, implanting ions (e.g., using ion beam implantation or ion beam etching) into a plurality of regions of the material layer using the mask layer and an ion beam having a slant angle equal to or greater than 0° (e.g., greater than about 30° or about 45°) with respect to a surface normal direction of the material layer to increase the oxidation rate (or reduction rate) of the plurality of regions of the material layer, selectively oxidizing (or reducing) the plurality of regions of the material layer that include implanted ions, and selectively etching the oxidized or reduced materials in the plurality of regions of the material layer to form the surface-relief structure in the material layer.