Abstract: A variety of applications can include apparatus or methods that provide a well ring for resistive ground power domain segregation. The well ring can be implemented as a n-well in a p-type substrate. Resistive separation between ground domains can be generated by biasing a n-well ring to an external supply voltage. This approach can provide a procedure, from a process standpoint, that provides relatively high flexibility to design for chip floor planning and simulation, while providing sufficient noise rejection between independent ground power domains when correctly sized. Significant noise rejection between ground power domains can be attained.

Abstract: A bus controller has a displacer, an arithmetic logic unit coupled to the displacer, and a replacer selectively coupled to the displacer and the arithmetic logic unit.

Abstract: A bus controller has a displacer, an arithmetic logic unit coupled to the displacer, and a replacer selectively coupled to the displacer and the arithmetic logic unit.

Abstract: A bus controller has a displacer, an arithmetic logic unit coupled to the displacer, and a replacer selectively coupled to the displacer and the arithmetic logic unit.

Abstract: A bus controller has a displacer, an arithmetic logic unit coupled to the displacer, and a replacer selectively coupled to the displacer and the arithmetic logic unit.

Abstract: A controller for a memory device and methods are provided. The controller has an updateable register bank adapted to send a first signal to an analog/memory core of the memory device for controlling operation of the analog/memory core. The analog/memory core has an array of flash memory cells and supporting analog access circuitry. A bus controller is coupled to the register bank. The bus controller is adapted to receive a second signal from the register bank and to send a third signal to the register bank for updating the register bank. A select register is coupled to the register bank. A processor is coupled to the bus controller and the select register.

Abstract: A controller for a memory device and methods are provided. The controller has an updateable register bank adapted to send a first signal to an analog/memory core of the memory device for controlling operation of the analog/memory core. The analog/memory core has an array of flash memory cells and supporting analog access circuitry. A bus controller is coupled to the register bank. The bus controller is adapted to receive a second signal from the register bank and to send a third signal to the register bank for updating the register bank. A select register is coupled to the register bank. A processor is coupled to the bus controller and the select register.

Abstract: Pattern dependent string resistance compensation of a memory device is generally described. In one example, an electronic device includes a first string of memory cells and a first bit line coupled with the first string of memory cells wherein a memory cell of the first string of memory cells is read, in part, by pre-charging the first bit line through the first string of memory cells to compensate for resistance of unselected cells in the first string of memory cells.

Abstract: A controller for a memory device and methods are provided. The controller has an updateable register bank adapted to send a first signal to an analog/memory core of the memory device for controlling operation of the analog/memory core. The analog/memory core has an array of flash memory cells and supporting analog access circuitry. A bus controller is coupled to the register bank. The bus controller is adapted to receive a second signal from the register bank and to send a third signal to the register bank for updating the register bank. A select register is coupled to the register bank. A processor is coupled to the bus controller and the select register.

Abstract: A controller for a memory device and methods are provided. The controller has an updateable register bank adapted to send a first signal to an analog/memory core of the memory device for controlling operation of the analog/memory core. The analog/memory core has an array of flash memory cells and supporting analog access circuitry. A bus controller is coupled to the register bank. The bus controller is adapted to receive a second signal from the register bank and to send a third signal to the register bank for updating the register bank. A select register is coupled to the register bank. A processor is coupled to the bus controller and the select register.

Abstract: A circuit to monitor the activity of a memory device during program/erase operations that are managed by a ROM-based microcontroller. Different signals can be monitored according to different test modes. The ROM-based microcontroller is triggered by a clock that can be connected to an internal fixed frequency oscillator or to an external clock source for which the frequency can be varied from 0 Hz to any frequency required by the application. The circuit outputs state machine status data, read only memory addresses, and memory status information in a series of multiplexing operations to provide a tester with the ability to determine the state of a memory device during various memory operations.

Abstract: A controller for a memory device and methods are provided. The controller has an updateable register bank adapted to send a first signal to an analog/memory core of the memory device for controlling operation of the analog/memory core. The analog/memory core has an array of flash memory cells and supporting analog access circuitry. A bus controller is coupled to the register bank. The bus controller is adapted to receive a second signal from the register bank and to send a third signal to the register bank for updating the register bank. A select register is coupled to the register bank. A processor is coupled to the bus controller and the select register.

Abstract: A controller for a memory device and methods are provided. The controller has an updateable register bank adapted to send a first signal to an analog/memory core of the memory device for controlling operation of the analog/memory core. The analog/memory core has an array of flash memory cells and supporting analog access circuitry. A bus controller is coupled to the register bank. The bus controller is adapted to receive a second signal from the register bank and to send a third signal to the register bank for updating the register bank. A select register is coupled to the register bank. A processor is coupled to the bus controller and the select register.

Abstract: A controller for a memory device and methods are provided. The controller has an updateable register bank adapted to send a first signal to an analog/memory core of the memory device for controlling operation of the analog/memory core. The analog/memory core has an array of flash memory cells and supporting analog access circuitry. A bus controller is coupled to the register bank. The bus controller is adapted to receive a second signal from the register bank and to send a third signal to the register bank for updating the register bank. A select register is coupled to the register bank. A processor is coupled to the bus controller and the select register.

Abstract: A circuit to monitor the activity of a memory device during program/erase operations that are managed by a ROM-based microcontroller. Different signals can be monitored according to different test modes. The ROM-based microcontroller is triggered by a clock that can be connected to an internal fixed frequency oscillator or to an external clock source for which the frequency can be varied from 0 Hz to any frequency required by the application. The circuit outputs state machine status data, read only memory addresses, and memory status information in a series of multiplexing operations to provide a tester with the ability to determine the state of a memory device during various memory operations.

Abstract: A circuit to monitor the activity of a memory device during program/erase operations that are managed by a ROM-based microcontroller. Different signals can be monitored according to different test modes. The ROM-based microcontroller is triggered by a clock that can be connected to an internal fixed frequency oscillator or to an external clock source for which the frequency can be varied from 0 Hz to any frequency required by the application. The circuit outputs state machine status data, read only memory addresses, and memory status information in a series of multiplexing operations to provide a tester with the ability to determine the state of a memory device during various memory operations.

Abstract: A controller for a memory device and methods are provided. The controller has an updateable register bank adapted to send a first signal to an analog/memory core of the memory device for controlling operation of the analog/memory core. The analog/memory core has an array of flash memory cells and supporting analog access circuitry. A bus controller is coupled to the register bank. The bus controller is adapted to receive a second signal from the register bank and to send a third signal to the register bank for updating the register bank. A select register is coupled to the register bank. A processor is coupled to the bus controller and the select register.

Abstract: A circuit to monitor the activity of a memory device during program/erase operations that are managed by a ROM-based microcontroller. Different signals can be monitored according to different test modes. The ROM-based microcontroller is triggered by a clock that can be connected to an internal fixed frequency oscillator or to an external clock source for which the frequency can be varied from 0 Hz to any frequency required by the application. The circuit outputs state machine status data, read only memory addresses, and memory status information in a series of multiplexing operations to provide a tester with the ability to determine the state of a memory device during various memory operations.