Abstract: An apparatus and method for storing data in a semiconductor memory. In accordance with some embodiments, the semiconductor memory has a continuous storage layer of soft ferromagnetic material having opposing top and bottom surfaces with overall length and width dimensions and an overall thickness dimension between the opposing top and bottom surfaces. A plurality of spaced apart, discrete reference layers are adjacent a selected one of the opposing top or bottom surfaces of the continuous storage layer with each having a fixed magnetic orientation. A plurality of spaced apart, discrete barrier layers are disposed in contacting relation between the discrete reference layers and the continuous storage layer.

Abstract: An apparatus and method for enhancing data writing and retention to a magnetic memory element, such as in a non-volatile data storage array. In accordance with various embodiments, a programmable memory element has a reference layer and a storage layer. The reference layer is provided with a fixed magnetic orientation. The storage layer is programmed to have a first region with a magnetic orientation antiparallel to said fixed magnetic orientation, and a second region with a magnetic orientation parallel to said fixed magnetic orientation. A thermal assist layer may be incorporated into the memory element to enhance localized heating of the storage layer to aid in the transition of the first region from parallel to antiparallel magnetic orientation during a write operation.

Abstract: An apparatus and method for enhancing data writing and retention to a magnetic memory element, such as in a non-volatile data storage array. In accordance with various embodiments, a programmable memory element has a reference layer and a storage layer. The reference layer is provided with a fixed magnetic orientation. The storage layer is programmed to have a first region with a magnetic orientation antiparallel to said fixed magnetic orientation, and a second region with a magnetic orientation parallel to said fixed magnetic orientation. A thermal assist layer may be incorporated into the memory element to enhance localized heating of the storage layer to aid in the transition of the first region from parallel to antiparallel magnetic orientation during a write operation.

Abstract: An apparatus and method for enhancing data writing and retention to a magnetic memory element, such as in a non-volatile data storage array. In accordance with various embodiments, a programmable memory element has a reference layer and a storage layer. The reference layer is provided with a fixed magnetic orientation. The storage layer is programmed to have a first region with a magnetic orientation antiparallel to said fixed magnetic orientation, and a second region with a magnetic orientation parallel to said fixed magnetic orientation. A thermal assist layer may be incorporated into the memory element to enhance localized heating of the storage layer to aid in the transition of the first region from parallel to antiparallel magnetic orientation during a write operation.

Abstract: A biosensor is described. The biosensor includes a fixed multilayer stack providing a magnetization oscillation, a voltage source electrically coupled to the fixed multilayer stack, and a binding molecule covalently bonded to the biosensor. The voltage source provides a direct current through the fixed multilayer stack to generate the magnetization oscillation and a target molecule including a magnetic nanoparticle forms a complex with the binding molecule and alters the magnetization oscillation.

Abstract: A biosensor is described. The biosensor includes a fixed multilayer stack providing a magnetization oscillation, a voltage source electrically coupled to the fixed multilayer stack, and a binding molecule covalently bonded to the biosensor. The voltage source provides a direct current through the fixed multilayer stack to generate the magnetization oscillation and a target molecule including a magnetic nanoparticle forms a complex with the binding molecule and alters the magnetization oscillation.

Abstract: A micro magnetic device having a body defining at least part of an enclosed chamber, a pole comprising a soft magnetic material within the chamber, and an electrically conductive coil positioned around the pole. A diaphragm integral with the body defines a top of the chamber opposite the pole. The diaphragm supports a permanent magnetic film. Multiple micro magnetic devices can be combined to form an array. The micro magnetic device may be, for example, a speaker or a sensor. The micro magnetic device may be made by MEMS or thin film techniques.