Patents by Inventor Patrice Arsene-Henry

Patrice Arsene-Henry has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for the manufacture of a transistor having differentiated access regions
    Patent number: 5336627
    Abstract: The disclosure relates to the making of the source and drain access regions of a field-effect transistor, these two regions being differentiated. The control region is defined by means of a three-layer mask of metal, resin and metal. A resin mask protects the drain access region, thus enabling the implantation of the source access region. After the dissolving of the resins, the drain access region is implanted.
    Type: Grant
    Filed: January 13, 1993
    Date of Patent: August 9, 1994
    Assignees: Thomson-CSF Semiconducteurs Specifiques, Thomson-CSF Semiconducteurs Specifiques
    Inventors: Thierry Pacou, Patrice Arsene-Henry, Tung N. Pham, Yann Genuist