Patents by Inventor Patrice Salzenstein

Patrice Salzenstein has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6451659
    Abstract: A semiconductor component of the heterojunction bipolar transistor type comprises, on a substrate, a collector, a base and a mesa-shaped emitter resting on the base. The bipolar transistor furthermore comprises electrically insulating elements in contact with the base and the flanks of the emitter mesa, said elements having a width of the same magnitude as the width of the mesa and providing the component with greater stability. Furthermore, a method for the manufacture of a component of this kind comprises in particular a step for the ion implantation of insulating ions through the constituent layer of the emitter mesa so as to define the electrically insulating elements.
    Type: Grant
    Filed: December 3, 1999
    Date of Patent: September 17, 2002
    Assignee: Thomson-CSF
    Inventors: Sylvain Delage, Simone Cassette, Achim Henkel, Patrice Salzenstein
  • Publication number: 20020031892
    Abstract: A semiconductor component of the heterojunction bipolar transistor type comprises, on a substrate, a collector, a base and a mesa-shaped emitter resting on the base. The bipolar transistor furthermore comprises electrically insulating elements in contact with the base and the flanks of the emitter mesa, said elements having a width of the same magnitude as the width of the mesa and providing the component with greater stability. Furthermore, a method for the manufacture of a component of this kind comprises in particular a step for the ion implantation of insulating ions through the constituent layer of the emitter mesa so as to define the electrically insulating elements.
    Type: Application
    Filed: December 3, 1999
    Publication date: March 14, 2002
    Inventors: SYLVAIN DELAGE, SIMONE CASSETTE, ACHIM HENKEL, PATRICE SALZENSTEIN
  • Patent number: 6031255
    Abstract: A semiconductor component of the heterojunction bipolar transistor type comprises, on a substrate, a collector, a base and a mesa-shaped emitter resting on the base. The bipolar transistor furthermore comprises electrically insulating elements in contact with the base and the flanks of the emitter mesa, said elements having a width of the same magnitude as the width of the mesa and providing the component with greater stability. Furthermore, a method for the manufacture of a component of this kind comprises in particular a step for the ion implantation of insulating ions through the constituent layer of the emitter mesa so as to define the electrically insulating elements.
    Type: Grant
    Filed: May 29, 1998
    Date of Patent: February 29, 2000
    Assignee: Thomson-CSF
    Inventors: Sylvain Delage, Simone Cassette, Achim Henkel, Patrice Salzenstein