Abstract: Apparatus for bathing a disabled patient, comprising (a) a bathtub, (b) a flexible membrane positioned above the tub for lowering the patient into and lifting the patient from the tub, (c) membrane engaging members for engaging opposite ends of the membrane, one of the membrane engaging members including a rotatable driven shaft which is rotated in a first direction to raise the membrane and a patient therein and in a second direction to lower the membrane and a patient thereon, and (d) a drive mechanism for rotating the driven shaft in order to raise of lower the membrane and patient thereon. The preferred membrane is a woven nylon cloth.

Abstract: A method for protecting extraction electrodes (140) during processing of Spindt-tip field emitters (150, 155) includes the steps of: (i) depositing a parting layer (170) on the extraction electrodes (140) and in an interspace region (145) defined by the extraction electrodes (140), (ii) sharpening the Spindt-tip field emitters (150), (iii) depositing a layer (180) of emission-enhancing material on the sharpened field emitters (155) and on the parting layer (170), and (iv) removing the parting layer (170), thereby lifting off the emission-enhancing material from the extraction electrodes (140) and from the interspace region (145), but not from the sharpened field emitters (155).

Abstract: A mask (12) is applied to a silicon carbide substrate (11) in order to etch the substrate (11). The material used for the mask (12) has a Mohs hardness factor greater than 4 in order to prevent sputtering material from the mask (12) onto the substrate (11). An oxygen and sulfur hexafluoride plasma is utilized to perform the etch.

Abstract: A method of fabricating a self-aligned FET having a semi-insulating substrate of GaAs or InP with a conductive channel formed either by doping the surface or an epitaxially grown channel by molecular beam epitaxy or metalorganic vapor phase epitaxy in the substrate adjacent the surface. Forming a high temperature stable LaB.sub.6 /TiWN "T-shaped" Schottky gate contact on the substrate surface, which is used for source and drain ohmic region implants into the substrate adjacent to the surface and self-aligned to the "T-shaped" gate, with source and drain ohmic contacts also self-aligned with respect to the gate.