Abstract: Methods, systems, and apparatus, including computer programs encoded on a computer storage medium, for allocating computing resources. In one aspect, a method includes receiving intent data specifying one or more computing services to be hosted by a computing network, requested characteristics of computing resources for use in hosting the computing service, and a priority value for each requested characteristic. A budget constraint is identified for each computing service. Available resources data is identified that specifies a set of available computing resources. A resource allocation problem for allocating computing resources for the one or more computing resources is generated based on the intent data, each budget constraint, and the available resources data. At least a portion of the set of computing resources is allocated for the one or more computing services based on results of evaluating the resource allocation problem to meet a particular resource allocation objective.

Abstract: According to one embodiment of the invention, a surface preparation method for selective and non-selective epitaxial growth includes providing a substrate having a gate region, a source region, and a drain region, etching a first portion of the source region and the drain region, and removing a second portion of the source region and the drain region by a plasma comprising a noble gas and oxygen.

Abstract: A pre-ECD surface treatment. After forming the barrier material (110) and seed layer (112), the surface of the seed layer (112) is treated with an H2 plasma to remove surface contamination (122), reduce any CuOx (123), and improve wettability. The ECD copper film (124) is then formed over the seed layer (112).

Abstract: A method (100) of fabricating an electronic device (200) formed on a semiconductor wafer. The method forms a layer (215) of a first material in a fixed position relative to the wafer. The first material has a dielectric constant less than 3.6. The method also forms a photoresist layer in (216) a fixed position relative to the layer of the first material. The method also forms at least one void (220) through the layer of the first material in response to the photoresist layer. Further, the method subjects (106) the semiconductor wafer to a plasma which incorporates a gas which includes hydrogen so as to remove the photoresist layer.

Abstract: A method (100) of fabricating an electronic device (200) formed on a semiconductor wafer. The method forms a layer (215) of a first material in a fixed position relative to the wafer. The first material has a dielectric constant less than 3.6. The method also forms a photoresist layer in (216) a fixed position relative to the layer of the first material. The method also forms at least one void (220) through the layer of the first material in response to the photoresist layer. Further, the method subjects (106) the semiconductor wafer to a plasma which incorporates a gas which includes hydrogen so as to remove the photoresist layer.

Abstract: A process for removing resist (114) from a CDO dielectric material (110) that uses a non-damaging plasma in a reducing atmosphere under high power and using a structure (150) or other means to limit ions from the plasma from reaching the surface of the CDO material (110).

Abstract: Another embodiment of the instant invention is a method of fabricating a conductive interconnect for providing an electrical connection between a first conductor and a second conductor for an electrical device formed in a semiconductor substrate, the method comprising the steps of: forming a dielectric layer (layer 226 of FIG. 2a) on the first conductor (conductor 222 of FIG. 2a), the dielectric layer having at least one opening which exposes the first conductor; forming a layer of an oxygen-sensitive material (layer 234 of FIG.

Abstract: A method (100) of fabricating an electronic device (200) formed on a semiconductor wafer. The method forms a layer (215) of a first material in a fixed position relative to the wafer. The first material has a dielectric constant less than 3.6. The method also forms a photoresist layer in (216) a fixed position relative to the layer of the first material. The method also forms at least one void (220) through the layer of the first material in response to the photoresist layer. Further, the method subjects (106) the semiconductor wafer to a plasma which incorporates a gas which includes hydrogen so as to remove the photoresist layer.

Abstract: An embodiment of the instant invention is a method of fabricating an electronic device formed on a semiconductor wafer, the method comprising the steps of: forming a layer of a first material (layer 622 of FIG. 6a) over the substrate; forming a photoresist layer (layer 626 of FIG. 6b) over the layer of the first material; patterning the layer of the first material; removing the photoresist layer after patterning the layer of the first material; and subjecting the semiconductor wafer to a plasma which incorporates a gas which includes hydrogen or deuterium so as to remove residue from the first material. Preferably, the step of removing the photoresist layer is performed by subjecting the semiconductor wafer to the plasma which incorporates a gas which substantially includes hydrogen or deuterium.

Abstract: A method of forming an integrated circuit including an organosilicate low dielectric constant insulating layer (40) formed of a substitution group depleted silicon oxide, such as an organosilicate glass, is disclosed. Subsequent plasma processing has been observed to break bonds in such an insulating layer (40), resulting in molecules at the surface of the film with dangling bonds. Eventually, the damaged insulating layer (40) includes silanol molecules, which results in a degraded film. The disclosed method exposes the damaged insulating layer (40) to a thermally or plasma activated fluorine, hydrogen, or nitrogen, which reacts with the damaged molecules to form a passivated surface for the insulating layer (40).

Abstract: A structure and a fabrication method for metallurgical connections between solder bumps and contact pads positioned on integrated circuits (IC) having copper interconnecting metallization protected by an overcoat. The structure comprises a portion of the copper metallization exposed by a window in the overcoat, where the exposed copper has a chemically and plasma cleaned surface. A copper layer is directly positioned on the clean copper metallization, and patterned; the resulting metal structure has an electrical (and thermal) conductivity about equal to the conductivity of pure copper. The copper layer overlaps the perimeter of the overcoat window and a copper stud is positioned on said copper layer. Finally, one of the solder bumps is bonded to the copper stud.

Abstract: A method of forming an organosilicate low dielectric constant insulating layer (40) in an integrated circuit, and an integrated circuit structure having such a low-k insulating layer (40), are disclosed. In the case where the low-k dielectric material of the insulating layer (40) comprises an organosilicate glass, subsequent plasma processing has been observed to break bonds between silicon and organic moieties, either by replacing an organic group with a hydroxyl group or with hydrogen, or by leaving a dangling bond. Eventually, the damaged insulating layer (40) includes silanol molecules, which results in a degraded film. The disclosed method exposes the damaged insulating layer (40) to a silylation agent such as hexamethyldisilazane, which reacts with the damaged molecules, and forms molecules that restore the properties of the film.

Abstract: A method of forming an integrated circuit including an organosilicate low dielectric constant insulating layer (40) formed of a substitution group depleted silicon oxide, such as an organosilicate glass, is disclosed. Subsequent plasma processing has been observed to break bonds in such an insulating layer (40), resulting in molecules at the surface of the film with dangling bonds. Eventually, the damaged insulating layer (40) includes silanol molecules, which results in a degraded film. The disclosed method exposes the damaged insulating layer (40) to a thermally or plasma activated fluorine, hydrogen, or nitrogen, which reacts with the damaged molecules to form a passivated surface for the insulating layer (40).

Abstract: A cleanup process that uses a dilute fluorine in oxygen chemistry in a downstream plasma tool to remove organic and inorganic polymeric residues (116).

Abstract: An embodiment of the instant invention is a method of fabricating an electronic device formed on a semiconductor wafer, the method comprising the steps of: forming a layer of a first material (layer 622 of FIG. 6a) over the substrate; forming a photoresist layer (layer 626 of FIG. 6b) over the layer of the first material; patterning the layer of the first material; removing the photoresist layer after patterning the layer of the first material; and subjecting the semiconductor wafer to a plasma which incorporates a gas which includes hydrogen or deuterium so as to remove residue from the first material. Preferably, the step of removing the photoresist layer is performed by subjecting the semiconductor wafer to the plasma which incorporates a gas which substantially includes hydrogen or deuterium.

Abstract: An embodiment of the instant invention is a method of fabricating an electronic device formed on a semiconductor wafer, the method comprising the steps of: forming a layer of a first material (layer 622 of FIG. 6a) over the substrate; forming a photoresist layer (layer 626 of FIG. 6b) over the layer of the first material; patterning the layer of the first material; removing the photoresist layer after patterning the layer of the first material; and subjecting the semiconductor wafer to a plasma which incorporates a gas which includes hydrogen or deuterium so as to remove residue from the first material. Preferably, the step of removing the photoresist layer is performed by subjecting the semiconductor wafer to the plasma which incorporates a gas which substantially includes hydrogen or deuterium.

Abstract: An embodiment of the instant invention is a method of fabricating an electronic device formed on a semiconductor wafer, the method comprising the steps of: forming a layer of a first material (layer 622 of FIG. 6a) over the substrate; forming a photoresist layer (layer 626 of FIG. 6b) over the layer of the first material; patterning the layer of the first material; removing the photoresist layer after patterning the layer of the first material; and subjecting the semiconductor wafer to a plasma which incorporates a gas which includes hydrogen or deuterium so as to remove residue from the first material. Preferably, the step of removing the photoresist layer is performed by subjecting the semiconductor wafer to the plasma which incorporates a gas which substantially includes hydrogen or deuterium.

Abstract: A structure and a fabrication method for metallurgical connections between solder bumps and contact pads positioned on integrated circuits (IC) having copper interconnecting metallization protected by an overcoat. The structure comprises a portion of the copper metallization exposed by a window in the overcoat, where the exposed copper has a chemically and plasma cleaned surface. A copper layer is directly positioned on the clean copper metallization, and patterned; the resulting metal structure has an electrical (and thermal) conductivity about equal to the conductivity of pure copper. The copper layer overlaps the perimeter of the overcoat window and a copper stud is positioned on said copper layer. Finally, one of the solder bumps is bonded to the copper stud.

Abstract: An embodiment of the instant invention is a method of fabricating an electronic device formed on a semiconductor wafer, the method comprising the steps of: forming a layer of a first material (layer 622 of FIG. 6a) over the substrate; forming a photoresist layer (layer 626 of FIG. 6b) over the layer of the first material; patterning the layer of the first material; removing the photoresist layer after patterning the layer of the first material; and subjecting the semiconductor wafer to a plasma which incorporates a gas which includes hydrogen or deuterium so as to remove residue from the first material. Preferably, the step of removing the photoresist layer is performed by subjecting the semiconductor wafer to the plasma which incorporates a gas which substantially includes hydrogen or deuterium.

Abstract: A pre-ECD surface treatment. After forming the barrier material (110) and seed layer (112), the surface of the seed layer (112) is treated with an H2 plasma to remove surface contamination (122), reduce any CuOx (123), and improve wettability. The ECD copper film (124) is then formed over the seed layer (112).