Abstract: A method of forming a semiconductor device including forming a low-k dielectric material over a substrate, depositing a liner on a portion of the low-k dielectric material, and exposing the liner to a plasma. The method also includes depositing a layer over the liner.

Abstract: A method of forming a semiconductor device including forming a low-k dielectric material over a substrate, depositing a liner on a portion of the low-k dielectric material, and exposing the liner to a plasma. The method also includes depositing a layer over the liner.

Abstract: A method of forming a semiconductor device including forming a low-k dielectric material over a substrate, depositing a liner on a portion of the low-k dielectric material, and exposing the liner to a plasma. The method also includes depositing a layer over the liner.

Abstract: The present invention provides a photoresist removal process and a method for manufacturing an interconnect using the same. One embodiment of the photoresist removal process includes, among other steps, providing a low dielectric constant (k) substrate having a photoresist layer located thereover, and removing the photoresist layer using a plasma which incorporates a gas which includes hydrogen or deuterium and a small amount of oxygen less than about 20 volume percent of the gas. Another embodiment of the photoresist removal process includes, among other steps, providing a low dielectric constant (k) substrate having a photoresist layer located thereover, removing a bulk portion of the photoresist layer using a plasma which incorporates a gas which includes hydrogen or deuterium, and removing a small portion of the photoresist layer using a plasma which incorporates a gas which includes oxygen, wherein the order of the two removing steps is interchangeable.

Abstract: A method of manufacturing a semiconductor device includes the steps of providing a semiconductor substrate (102), forming a dielectric layer (104) over the semiconductor substrate (102), and etching a trench structure (106) or a via structure (106) in the dielectric layer (104) to expose a portion of a surface of the semiconductor substrate (102). The method also includes the steps of treating a surface (104a) of the dielectric layer (104) with an adhesion solution, such as a reactive plasma including hydrogen, and forming a diffusion barrier layer (110) over the dielectric layer (104). Moreover, the adhesion solution chemically interacts with the surface (104a) of the dielectric layer (104) and enhances or increases adhesion between dielectric layer (104) and diffusion barrier layer (110).

Abstract: Cleaning methods are disclosed for removing sidewall polymers from interconnect vias or trenches, wherein a wafer is exposed to a plasma comprising hydrogen and an inert gas in a plasma cleaning chamber following etch-stop etching.

Abstract: Cleaning methods are disclosed for removing sidewall polymers from interconnect vias or trenches, wherein a wafer is exposed to a plasma comprising hydrogen and an inert gas in a plasma cleaning chamber following etch-stop etching.

Abstract: A method of manufacturing a semiconductor device includes the steps of providing a semiconductor substrate (102), forming a dielectric layer (104) over the semiconductor substrate (102), and etching a trench structure (106) or a via structure (106) in the dielectric layer (104) to expose a portion of a surface of the semiconductor substrate (102). The method also includes the steps of treating a surface (104a) of the dielectric layer (104) with an adhesion solution, such as a reactive plasma including hydrogen, and forming a diffusion barrier layer (110) over the dielectric layer (104). Moreover, the adhesion solution chemically interacts with the surface (104a) of the dielectric layer (104) and enhances or increases adhesion between dielectric layer (104) and diffusion barrier layer (110).