Abstract: A cartridge for containing and dispensing a medicament, the cartridge including a cartridge body having an interior cavity therein, a stopper movably disposed within the interior cavity, and a septum disposed at an opposite end of the interior cavity from the stopper, for containing the medicament within the interior cavity. The cartridge also includes a connection thread integrally formed as a unitary construction of the cartridge body, the thread being disposed at a first end of the cartridge body for connecting a pen needle directly to the cartridge body to pierce the septum and provide communication between the medicament and a patient end of the pen needle.

Abstract: A cartridge for containing and dispensing a medicament, the cartridge including a cartridge body having an interior cavity therein, a stopper movably disposed within the interior cavity, and a septum disposed at an opposite end of the interior cavity from the stopper, for containing the medicament within the interior cavity. The cartridge also includes a connection thread integrally formed as a unitary construction of the cartridge body, the thread being disposed at a first end of the cartridge body for connecting a pen needle directly to the cartridge body to pierce the septum and provide communication between the medicament and a patient end of the pen needle.

Abstract: A cartridge (100) for containing and dispensing a medicament, the cartridge (100) including a cartridge body (104) having an interior cavity (10B) therein, a stopper (112) movably disposed within the interior cavity (108), and a septum (116, 148) disposed at an opposite end of the interior cavity (108) from the stopper (112), for containing the medicament within the Interior cavity (108). The cartridge (100) also Includes a connection thread (120) integrally formed as a unitary construction of the cartridge body (104), the thread (120) being disposed at a first end of the cartridge body (104) for connecting a pen needle directly to the cartridge body (104) to pierce the septum (116, 148) and provide communication between the medicament and a patient end of the pen needle.

Abstract: A cartridge (100) for containing and dispensing a medicament, the cartridge (100) including a cartridge body (104) having an interior cavity (10B) therein, a stopper (112) movably disposed within the interior cavity (108), and a septum (116, 148) disposed at an opposite end of the interior cavity (108) from the stopper (112), for containing the medicament within the Interior cavity (108). The cartridge (100) also Includes a connection thread (120) integrally formed as a unitary construction of the cartridge body (104), the thread (120) being disposed at a first end of the cartridge body (104) for connecting a pen needle directly to the cartridge body (104) to pierce the septum (116, 148) and provide communication between the medicament and a patient end of the pen needle.

Abstract: Pulse width modulated (“Class D”) amplifiers and controllers switching in the 50 khz to 2 MHz range generate harmonics that interfere with AM radio reception. This interference has precluded wide spread acceptance of class D amplifiers in products that include an AM radio. The amplifier described here uses a a harmonic avoidance modulator when operating with an AM radio to avoid generating harmonics at the receiver selected frequency or the intermediate (IF) frequency thereof.

Abstract: A circuit for avoiding AM radio interference in a class D amplifier includes comparing means that compares the frequency of an AM signal to one or more reference signals. The comparing means generates comparator signals indicative of whether the first signal is greater than, less than or equal to the reference signals. A frequency divisor signal that represents a frequency divisor number is issued dependent at least in part upon the comparator signals. Dividing means generate an oscillator signal for the class D amplifier that has a frequency derived by dividing the frequency of the AM signal by the frequency divisor number.

Abstract: Pulse width modulated (“Class D”) amplifiers and controllers switching in the 50 khz to 2 MHz range generate harmonics that interfere with AM radio reception. This interference has precluded wide spread acceptance of class D amplifiers in products that include an AM radio. The amplifier described here uses a a harmonic avoidance modulator when operating with an AM radio to avoid generating harmonics at the receiver selected frequency or the intermediate (IF) frequency thereof.

Abstract: Pulse width modulated (“Class D”) amplifiers and controllers switching in the 50 khz to 2 MHz range generate harmonics which interfere with AM radio reception. This has precluded wide spread acceptance of class D amplifiers in products with an AM radio. The amplifiers described here use a modified modulation technique when operating with an AM radio to avoid generating harmonics at the receiver selected frequency or its intermediate (IF) frequency. One embodiment uses a harmonic avoidance modulator. A second embodiment uses two or more oscillators and tests for the least distorted output signal. A third embodiment switches the mode of operation to a class AB amplifier when an AM signal is amplified.

Abstract: Airbridge structures and processes for making air bridge structures and integrated circuits are disclosed. One airbridge structure has metal conductors 24 encased in a sheath of dielectric material 249. The conductors extend across a cavity 244 and a semiconductor substrate 238. In one embodiment, the conductors traversing the cavity 244 are supported by posts 248 that extend from the substrate. In another embodiment, oxide posts 258 extend from the substrate to support the conductors. In another embodiment, trenches 101 are made in a device substrate 110 bonded to a handle substrate 100. The trenches are filled with a dielectric and a conductor pattern is formed over the filled trenches. The substrate material between the conductors is then removed to leave a pattern of posts 116, 114, 112 that included dielectrically encased conductors 106. In another bonded wafer embodiment, conductors 204 are encased in a dielectric above a sacrificial device region.

Abstract: Conductive elements which provide interconnections (air bridges between circuits) and components such as capacitors and inductors may be incorporated in the devices in a manner to reduce parasitic effects in the operation of the devices while providing close spacing which enhances the performance of the devices at high frequency. Separate substrates are provided respectively having the integrated circuits formed therein and covering, preferably sealing the integrated circuits. The air bridge conductive components (interconnections, capacitors or inductors) are formed separately in the covering substrate which is assembled with the substrate having the integrated circuit as a lid which seals and packages the circuits and the conductive element or component contained in the lid. The conductive component may be separated by cavities formed in the lid substrate or in the substrate having the integrated circuit device already formed therein.

Abstract: A class D amplifier 100 has an integrator 10, a comparator 12, and a frequency compensation and gain control (FCGC) circuit 40. The FCGC circuit 40 senses the output and reduces the gain in order to keep the sampling frequency high enough to avoid audio artifacts.

Abstract: A wafer level hermetically packaged integrated circuit has a protective cover wafer bonded to a semiconductor device substrate wafer. The substrate wafer may contain a cavity. The cover wafer seals integrated circuits and other devices including but not limited to air bridge structures, resonant beams, surface acoustic wave (SAW) devices, trimmable resistors, and micromachines. Some devices, such as SAWs, are formed on the surface of cavities formed in the protective cover wafer. Die are separated to complete the process.

Abstract: A wafer level hermetically packaged integrated circuit has a protective cover wafer bonded to a semiconductor device substrate wafer. The substrate wafer may contain a cavity. The cover wafer seals integrated circuits and other devices including but not limited to air bridge structures, resonant beams, surface acoustic wave (SAW) devices, trimmable resistors, and micromachines. Some devices, such as SAWs, are formed on the surface of cavities formed in the protective cover wafer. Die are separated to complete the process.

Abstract: A bonded wafer 10 has a silicon device layer 20 bonded to a layer of semi-insulating material 14, preferably a mobility degraded silicon such as polycrystaline silicon. Layer 14 is thick enough and substrate 16 is conductive enough to reduce resistive losses when devices in layer 20 are operated at frequencies above 0.1 Ghz. Substrate 16 is conductive enough and semi-insulating material 14 is resistive enough to prevent cross-talk among devices in layer 20.

Abstract: An integrated circuit 10 has a programmable Zener diode with diffusion regions 18 and 16 and metal contacts 34 and 32. A barrier metal 30 is disposed between one contact 32 and the substrate 12; another contact region 18 has no barrier metal on its surface. A polysilicon layer 22 is self-aligned with surface regions 18 and diffusion region 18. A silicide layer 128 may be used on the polysilicon layer 22 and on surface region 18.

Abstract: A focal plane array and an associated technique for manufacturing such an array, employ a first, substantially planar semiconductor substrate, that contains a densely compacted array of photodiodes, interconnected with a plurality of second semiconductor substrates in which the signal processing electronics for the array are formed. The backside of the focal plane array-containing substrate has an associated array of conductive bumps to which the respective photodiodes on the imaging side are electrically connected. Within plural ones of second semiconductor substrates, each of which is associated with a respective row of the array of photodiodes there are integrated the signal processing electronics for that row. Formed along side edge portions of the second substrates are a plurality of metallic bumps which are conductively connected to the signal processing electronics.