Abstract: An amorphous silicon electrographic writing head assembly which reduces the voltage drift in the high voltage driving transistor. The writing head including a substrate having a first surface and a second surface, the first surface having thin film elements fabricated thereon, the first surface having a first region, a second region, and a third region, the first region including an array of writing electrodes, the second region including an array of high voltage transistors, and the third region including interconnecting circuitry for connecting the thin film elements to a connector. The head also includes a first cover glass fixed to the first surface of the array covering the first region and a second cover glass fixed to the first surface of the array covering the third region.

Abstract: An integrated thin film electrographic writing head. The writing head has integrated therein a plurality of marking electrodes or nibs arranged in a linear array for writing onto a medium, and a plurality of high voltage driving circuits for driving the nibs. The write head also includes a plurality of latches each connected to the high voltage driving circuits, a plurality of memory cells each connected to the latches, a plurality of buffers, each buffer supplying a select line to the plurality of memory cells, and a plurality of selection elements, supplying a selection signal to each of the buffers to drive a segment of memory cells. The integrated memory means and latching means allow for simultaneous latching and writing of an entire scanline of data.

Abstract: An improved electrographic writing head having electrode nibs for forming discrete electrostatic charges on a recording medium moved in a plane in contact with the nib ends in the head wherein the improvement comprises the employment of an impedance formed in the electrode nibs at or in proximity to the nib ends to reduce the intercoupling capacitance effect between adjacently disposed nibs to prevent flaring from occurring on the deposition of charge from the nib ends. The impedance is in the range of several megohms, such as, 50-1000 megohms.

Abstract: An integrated image bar comprises an array of photosensitive reading elements and an array of associated marking elements, one for each reading element. Each reading element is linked to its associated marking element by means of an integrated circuit which comprises a plurality of thin film or MOS transistor amplifiers. In this manner, the reading elements, marking elements and amplifier circuits may be produced in a compact and inexpensive integrated structure. The integrated image bar may be used for copying documents, as well as for reading documents and for transmitting the information read to another integrated image bar, and for producing a combined record of information received from another remote image bar or remote data source for inclusion with the information read by the subject image bar.