Abstract: A urological repair device includes a stent having a diameter that fits within a portion of a urological structure. The stent also has a length to bridge a distance between a first end of the urological structure and a second end of the urological structure. The stent includes at least one tapered end. The tapered end enables placement of the stent within the urological structure. A method of repairing a urological structure includes placing a first end of a substantially tubular urological structure over a first end of a tubular stent, and placing a second end of a substantially tubular urological structure over a second end of a stent, and attaching the first end of the substantially tubular urological structure, the second end of a substantially tubular urological structure, and the tubular stent to form a fluid passageway.

Abstract: A method for reducing surface recombination in an area next to a mesa in devices containing active and passive sections. This is obtained by growing, by metalorganic vapor phase epitaxy (MOVPE), a thin epitaxial layer of material with larger bandgap than a waveguide material and preferably smaller surface recombination rate than the waveguide material. This thin layer is preferably non-intentionally doped to avoid creating a surface leakage path, thin enough to allow for carrier to diffuse to and thermalize in the waveguide layer and thick enough to prevent carriers to tunnel through it.

Abstract: A method for reducing surface recombination in an area next to a mesa in devices containing active and passive sections. This is obtained by growing, by metalorganic vapor phase epitaxy (MOVPE), a thin epitaxial layer of material with larger bandgap than a waveguide material and preferably smaller surface recombination rate than the waveguide material. This thin layer is preferably non-intentionally doped to avoid creating a surface leakage path, thin enough to allow for carrier to diffuse to and thermalize in the waveguide layer and thick enough to prevent carriers to tunnel through it.

Abstract: A vertical directional coupler fabricated using wafer fusion with a very short coupling length for fabrication of switches, filters and other electro-optic devices. Using the fused vertical coupler, planar waveguides can be fabricated on two different substrates in a three-dimensional structure in which there is vertical coupling between arrays through fused regions. Switches, including crossbar switches based on coupling between independent arrays of waveguides, as well as filters, can be fabricated.