Patents by Inventor Patrick Austin
Patrick Austin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11948227Abstract: Certain embodiments of the present disclosure provide techniques for eliminating an appearance of one or more objects in an environment surrounding a vehicle during operation of the vehicle. A method generally includes detecting the one or more objects in first sensor data collected from first sensors onboard the vehicle, wherein the first sensor data is representative of the environment surrounding the vehicle; receiving, from other vehicles, second sensor data collected from second sensors onboard the other vehicles, wherein the second sensor data is representative of the environment surrounding each of the one or more other vehicles; generating one or more augmented reality images depicting portions of the environment obstructed by the one or more objects in the first sensor data; displaying the one or more augmented reality images in an augmented reality display such that the augmented reality images are positioned to overlay the one or more objects.Type: GrantFiled: April 18, 2023Date of Patent: April 2, 2024Assignees: TOYOTA MOTOR ENGINEERING & MANUFACTURING NORTH AMERICA, INC., TOYOTA JIDOSHA KABUSHIKI KAISHAInventors: Benjamin Piya Austin, John K. Lenneman, George M. Evans, Takeshi Yoshida, William Patrick Garrett, Rebecca L. Kirschweng
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Patent number: 10951761Abstract: Disclosed herein is a computer-implemented method and related system for operating a virtual computer assistant (VCA) system of a service provider system. The method includes activating a switch to connect a communication link of the system from a human assistant (HA) to a customer and conveying first communications over the communication link to the customer from the HA. The method automatically detects a switching event according to a switching rule stored in a switch rules database stored in a memory of the system while the communication link to the HA is active. The method activates the switch to connect the communication link from the customer to a VCA after the conveying of the first communications, and then conveys second communications over the communication link to the customer from the VCA.Type: GrantFiled: December 10, 2018Date of Patent: March 16, 2021Assignee: Wells Fargo Bank, N.A.Inventors: Joel Scott Gardner, Daniel S. Sumner, Patrick Austin Boger, H. Brock Kolls, Daniel Sanford, Kyle Patrick Mitchell
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Publication number: 20170309738Abstract: The invention relates to a vertically structured power transistor, such as a VD-MOS or an IGBT, having a cell comprising: two symmetrical source layers (308), preferably N+ doped, which extend from a front surface (312) of the semiconductor substrate; a well layer (307), preferably P doped, comprising an area having a higher doping concentration (307b) that extends from one source layer to the other; a source/well NP junction (J3) between the source layer and the well layer. According to the invention, a cathode formed on the front surface (312) of the semiconductor substrate has a trench portion (309) with a bottom (313) that extends into the area having a higher doping concentration (307b) of the well layer (307) to a certain depth away from the source/well NP junction (J3).Type: ApplicationFiled: November 24, 2015Publication date: October 26, 2017Inventors: Moustafa ZERARKA, Patrick AUSTIN, Marise BAFLEUR
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Patent number: 7109609Abstract: The invention concerns the control of thyristor-type semiconductor power components (Sw) powered by an alternating current network (VS). The control signal is a pulse (Ie). It is stored in the form of magnetic induction (B), positive or negative, in a core (T) made of ferromagnetic material. At each current alternation of the network, the interrogation of the magnetic state of the strand results in the presence, or not, of a control signal on the power device (Sw).Type: GrantFiled: October 30, 2001Date of Patent: September 19, 2006Assignee: STMicroelectronics S.A.Inventors: Jean Jalade, Jean-Pierre Laur, Jean-Louis Sanchez, Patrick Austin, Marie Breil, Eric Bernier
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Patent number: 6831328Abstract: The invention concerns an anode voltage sensor of a vertical power component selected from the group consisting of components called thyristor, MOS, IGBT, PMCT, EST, BRT transistor, MOS thyristor, turn-off MOS thyristor, formed by a lightly doped N-type substrate (1) whereof the rear surface (2) having a metallizing coat corresponds to the component anode. Said sensor comprises, on the front surface side, a substrate zone (12) surrounded at least partly by a P-type region with low potential in front of an anode potential, said zone (12) being coated with a metallizing coat (M) in ohmic contact with it, whereon is provided an image of the anode voltage.Type: GrantFiled: May 16, 2003Date of Patent: December 14, 2004Assignee: Centre National de la Recherche ScientifiqueInventors: Patrick Austin, Jean-Pierre Laur, Olivier Causse, Marie Breil, Jean-Louis Sanchez, Jean Jalade
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Patent number: 6703681Abstract: The invention concerns a variable capacitance capacitor comprising a periodic structure of raised zones (5) separated by recesses (6) formed in a type N semiconductor substrate (1). The walls of the raised zones and the base of the recesses are coated with a conductive layer (9, 10). The substrate is connected to a first terminal (A) of the capacitor and the conductive layer to a second terminal (B) of the capacitor. At least the base of the recesses or the side of the raised zones comprises type P regions (8), the pitch of the raised parts being selected so that the space charging zones linked to the type P regions are joined when the voltage difference between said terminals exceeds a predetermined threshold. The zones not comprising type P regions are coated with an insulant (7) and a highly doped N region (10) is formed beneath the insulant.Type: GrantFiled: May 16, 2003Date of Patent: March 9, 2004Assignee: Centre National de la Recherche ScientifiqueInventors: Jean-Louis Sanchez, Jean-Pierre Laur, Hedi Hakim, Patrick Austin, Jean Jalade, Marie Breil
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Publication number: 20040027005Abstract: The invention concerns the control of thyristor-type semiconductor power components (Sw) powered by an alternating current network (VS). The control signal is a pulse (Ie). It is stored in the form of magnetic induction (B), positive or negative, in a core (T) made of ferromagnetic material. At each current alternation of the network, the interrogation of the magnetic state of the strand results in the presence, or not, of a control signal on the power device (Sw).Type: ApplicationFiled: April 29, 2003Publication date: February 12, 2004Inventors: Jean Jalade, Jean-Pierre Laur, Jean-Louis Sanchez, Patrick Austin, Marie Breil, Eric Bernier
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Publication number: 20030183866Abstract: The invention concerns a variable capacitance capacitor comprising a periodic structure of raised zones (5) separated by recesses (6) formed in a type N semiconductor substrate (1). The walls of the raised zones and the base of the recesses are coated with a conductive layer (9, 10). The substrate is connected to a first terminal (A) of the capacitor and the conductive layer to a second terminal (B) of the capacitor. At least the base of the recesses or the side of the raised zones comprises type P regions (8), the pitch of the raised parts being selected so that the space charging zones linked to the type P regions are joined when the voltage difference between said terminals exceeds a predetermined threshold. The zones not comprising type P regions are coated with an insulant (7) and a highly doped N region (10) is formed beneath the insulant.Type: ApplicationFiled: May 16, 2003Publication date: October 2, 2003Inventors: Jean-Louis Sanchez, Jean-Pierre Laur, Hedi Hakim, Patrick Austin, Jean Jalade, Marie Breil
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Publication number: 20030174008Abstract: The invention concerns an anode voltage sensor of a vertical power component selected from the group consisting of components called thyristor, MOS, IGBT, PMCT, EST, BRT transistor, MOS thyristor, turn-off MOS thyristor, formed by a lightly doped N-type substrate (1) whereof the rear surface (2) having a metallizing coat corresponds to the component anode. Said sensor comprises, on the front surface side, a substrate zone (12) surrounded at least partly by a P-type region with low potential in front of an anode potential, said zone (12) being coated with a metallizing coat (M) in ohmic contact with it, whereon is provided an image of the anode voltage.Type: ApplicationFiled: May 16, 2003Publication date: September 18, 2003Inventors: Patrick Austin, Jean-Pierre Laur, Olivier Causse, Marie Breil, Jean-Louis Sanchez, Jean Jalade
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Patent number: 6459102Abstract: A peripheral structure for a monolithic power device, preferably planar, includes front and rear surfaces, connected respectively to a cathode and an anode, two junctions respectively reverse-biased and forward-biased when a direct and adjacent voltage is respectively applied to the two surfaces and at least an insulating box connecting the front and rear surfaces. The structure is such that when a direct voltage or a reverse voltage is applied, generating equipotential voltage lines, the insulating box enables to distribute the equipotential lines in the substrate.Type: GrantFiled: October 9, 2001Date of Patent: October 1, 2002Assignee: Centre National de la Recherche ScientifiqueInventors: Patrick Austin, Jean-Louis Sanchez, Olivier Causse, Marie Breil, Jean-Pierre Laur, Jean Jalade
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Patent number: 6326648Abstract: A monolithic power switch with a controlled di/dt including the parallel assembly of a MOS or IGBT type component with a thyristor type component, including means for inhibiting the thyristor type component during the closing phase of the switch, which is ensured by the IGBT type component. The IGBT type component has a vertical multicell structure and the component of thyristor type has a vertical monocell structure.Type: GrantFiled: December 20, 1999Date of Patent: December 4, 2001Assignee: STMicroelectronics S.A.Inventors: Jean Jalade, Jean-Louis Sanchez, Jean-Pierre Laur, Marie Breil, Patrick Austin, Eric Bernier, Mathieu Roy
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Patent number: 6046672Abstract: The present invention provides a tire condition indicating device having a detector for detecting the condition of a tire on a wheel of a vehicle rotatable about a wheel axis, preferably for detecting pressure of the tire, a signal emitter emitting a signal when the detector detects the condition and power supply device providing power to the signal emitter the power supply device having an electric power generator including first and second parts that are relatively rotatable about a generator axis, the first part connected to the wheel to rotate.Type: GrantFiled: July 28, 1997Date of Patent: April 4, 2000Inventor: Kevin Patrick Austin Pearman