Abstract: The present specification relates generally to spraying devices and more specifically to a spring-loaded portable spraying device for dispersing liquids without electricity or gas propellants and a related method. The spring-loaded spraying device comprises at least one canister assembly, wherein each canister assembly comprises a canister; a rod partially contained within the canister; at least one spring, wherein the at least one spring is coiled around the rod; and a spring-locking mechanism; a canister recipient, for receiving the at least one canister assembly; at least one fluid channel in communication with the at least one canister and extending through the canister recipient; a valve within the at least one fluid channel; a trigger assembly functionally connected with the valve; and a handle connected to the canister recipient.

Abstract: The invention relates to a vertically structured power transistor, such as a VD-MOS or an IGBT, having a cell comprising: two symmetrical source layers (308), preferably N+ doped, which extend from a front surface (312) of the semiconductor substrate; a well layer (307), preferably P doped, comprising an area having a higher doping concentration (307b) that extends from one source layer to the other; a source/well NP junction (J3) between the source layer and the well layer. According to the invention, a cathode formed on the front surface (312) of the semiconductor substrate has a trench portion (309) with a bottom (313) that extends into the area having a higher doping concentration (307b) of the well layer (307) to a certain depth away from the source/well NP junction (J3).

Abstract: The invention concerns the control of thyristor-type semiconductor power components (Sw) powered by an alternating current network (VS). The control signal is a pulse (Ie). It is stored in the form of magnetic induction (B), positive or negative, in a core (T) made of ferromagnetic material. At each current alternation of the network, the interrogation of the magnetic state of the strand results in the presence, or not, of a control signal on the power device (Sw).

Abstract: The invention concerns an anode voltage sensor of a vertical power component selected from the group consisting of components called thyristor, MOS, IGBT, PMCT, EST, BRT transistor, MOS thyristor, turn-off MOS thyristor, formed by a lightly doped N-type substrate (1) whereof the rear surface (2) having a metallizing coat corresponds to the component anode. Said sensor comprises, on the front surface side, a substrate zone (12) surrounded at least partly by a P-type region with low potential in front of an anode potential, said zone (12) being coated with a metallizing coat (M) in ohmic contact with it, whereon is provided an image of the anode voltage.

Abstract: The invention concerns a variable capacitance capacitor comprising a periodic structure of raised zones (5) separated by recesses (6) formed in a type N semiconductor substrate (1). The walls of the raised zones and the base of the recesses are coated with a conductive layer (9, 10). The substrate is connected to a first terminal (A) of the capacitor and the conductive layer to a second terminal (B) of the capacitor. At least the base of the recesses or the side of the raised zones comprises type P regions (8), the pitch of the raised parts being selected so that the space charging zones linked to the type P regions are joined when the voltage difference between said terminals exceeds a predetermined threshold. The zones not comprising type P regions are coated with an insulant (7) and a highly doped N region (10) is formed beneath the insulant.

Abstract: The invention concerns the control of thyristor-type semiconductor power components (Sw) powered by an alternating current network (VS). The control signal is a pulse (Ie). It is stored in the form of magnetic induction (B), positive or negative, in a core (T) made of ferromagnetic material. At each current alternation of the network, the interrogation of the magnetic state of the strand results in the presence, or not, of a control signal on the power device (Sw).

Abstract: The invention concerns a variable capacitance capacitor comprising a periodic structure of raised zones (5) separated by recesses (6) formed in a type N semiconductor substrate (1). The walls of the raised zones and the base of the recesses are coated with a conductive layer (9, 10). The substrate is connected to a first terminal (A) of the capacitor and the conductive layer to a second terminal (B) of the capacitor. At least the base of the recesses or the side of the raised zones comprises type P regions (8), the pitch of the raised parts being selected so that the space charging zones linked to the type P regions are joined when the voltage difference between said terminals exceeds a predetermined threshold. The zones not comprising type P regions are coated with an insulant (7) and a highly doped N region (10) is formed beneath the insulant.

Abstract: The invention concerns an anode voltage sensor of a vertical power component selected from the group consisting of components called thyristor, MOS, IGBT, PMCT, EST, BRT transistor, MOS thyristor, turn-off MOS thyristor, formed by a lightly doped N-type substrate (1) whereof the rear surface (2) having a metallizing coat corresponds to the component anode. Said sensor comprises, on the front surface side, a substrate zone (12) surrounded at least partly by a P-type region with low potential in front of an anode potential, said zone (12) being coated with a metallizing coat (M) in ohmic contact with it, whereon is provided an image of the anode voltage.

Abstract: A peripheral structure for a monolithic power device, preferably planar, includes front and rear surfaces, connected respectively to a cathode and an anode, two junctions respectively reverse-biased and forward-biased when a direct and adjacent voltage is respectively applied to the two surfaces and at least an insulating box connecting the front and rear surfaces. The structure is such that when a direct voltage or a reverse voltage is applied, generating equipotential voltage lines, the insulating box enables to distribute the equipotential lines in the substrate.

Abstract: A monolithic power switch with a controlled di/dt including the parallel assembly of a MOS or IGBT type component with a thyristor type component, including means for inhibiting the thyristor type component during the closing phase of the switch, which is ensured by the IGBT type component. The IGBT type component has a vertical multicell structure and the component of thyristor type has a vertical monocell structure.