Abstract: A pedestal for a substrate processing system includes a pedestal body including a substrate-facing surface. An annular band is arranged on the substrate-facing surface that is configured to support a radially outer edge of the substrate. A cavity is defined in the substrate-facing surface of the pedestal body and is located radially inside of the annular band. The cavity creates a volume between a bottom surface of the substrate and the substrate-facing surface of the pedestal body. A plurality of vents pass though the pedestal body and are in fluid communication with the cavity to equalize pressure on opposing faces of the substrate during processing.

Abstract: An electrostatic substrate chuck with substrate backside purging to prevent incidental backside deposition and that provides thermal sinking to prevent or mitigate the failure of seals.

Abstract: A pedestal for a substrate processing system includes a pedestal body including a substrate-facing surface. An annular band is arranged on the substrate-facing surface that is configured to support a radially outer edge of the substrate. A cavity is defined in the substrate-facing surface of the pedestal body and is located radially inside of the annular band. The cavity creates a volume between a bottom surface of the substrate and the substrate-facing surface of the pedestal body. A plurality of vents pass though the pedestal body and are in fluid communication with the cavity to equalize pressure on opposing faces of the substrate during processing.

Abstract: A substrate processing system includes a first chamber including a substrate support. A showerhead is arranged above the first chamber and is configured to filter ions and deliver radicals from a plasma source to the first chamber. The showerhead includes a heat transfer fluid plenum, a secondary gas plenum including an inlet to receive secondary gas and a plurality of secondary gas injectors to inject the secondary gas into the first chamber, and a plurality of through holes passing through the showerhead. The through holes are not in fluid communication with the heat transfer fluid plenum or the secondary gas plenum.

Abstract: A semiconductor system includes a chamber, a pedestal disposed in the chamber, and a focus ring that surrounds the pedestal. The pedestal has a center region for supporting a central region of a substrate, e.g., a wafer. The focus ring is configured to surround the center region of the pedestal. The focus ring has an annular support region that extends between an inner portion of the focus ring and an outer portion of the focus ring. The annular support region, which is disposed at an angle relative to a horizontal line, provides a knife-edge contact for the substrate when present over the center region of the pedestal and the annular support region of the focus ring. The knife-edge contact between the edge of the substrate and the annular support region of the focus ring disables chemical access to the substrate backside and thereby reduces unwanted backside deposition.

Abstract: A pedestal for a substrate processing system includes a pedestal body including a substrate-facing surface. An annular band is arranged on the substrate-facing surface that is configured to support a radially outer edge of the substrate. A cavity is defined in the substrate-facing surface of the pedestal body and is located radially inside of the annular band. The cavity creates a volume between a bottom surface of the substrate and the substrate-facing surface of the pedestal body. A plurality of vents pass through the pedestal body and are in fluid communication with the cavity to equalize pressure on opposing faces of the substrate during processing.

Abstract: An electrostatic substrate chuck with substrate backside purging to prevent incidental backside deposition and that provides thermal sinking to prevent or mitigate the failure of seals.

Abstract: A pedestal assembly for a plasma processing system is provided. The assembly includes a pedestal with central top surface, e.g., mesa, and the central top surface extends from a center of the central top surface to an outer diameter of the central top surface. An annular surface surrounds the central top surface. The annular top surface is disposed at step down from the central top surface. A plurality of wafer supports project out of the central top surface at a support elevation distance above the central top surface. The plurality of wafer supports are evenly arranged around an inner radius of the center top surface. The inner radius is located between the center of the central top surface and less than a mid-radius that is approximately half way between the center of the pedestal and the outer diameter of the central top surface. A carrier ring configured for positioning over the annular surface of the pedestal is provided.

Abstract: A semiconductor system includes a chamber, a pedestal disposed in the chamber, and a focus ring that surrounds the pedestal. The pedestal has a center region for supporting a central region of a substrate, e.g., a wafer. The focus ring is configured to surround the center region of the pedestal. The focus ring has an annular support region that extends between an inner portion of the focus ring and an outer portion of the focus ring. The annular support region, which is disposed at an angle relative to a horizontal line, provides a knife-edge contact for the substrate when present over the center region of the pedestal and the annular support region of the focus ring. The knife-edge contact between the edge of the substrate and the annular support region of the focus ring disables chemical access to the substrate backside and thereby reduces unwanted backside deposition.

Abstract: A pedestal for a substrate processing system includes a pedestal body including a substrate-facing surface. An annular band is arranged on the substrate-facing surface that is configured to support a radially outer edge of the substrate. A cavity is defined in the substrate-facing surface of the pedestal body and is located radially inside of the annular band. The cavity creates a volume between a bottom surface of the substrate and the substrate-facing surface of the pedestal body. A plurality of vents pass though the pedestal body and are in fluid communication with the cavity to equalize pressure on opposing faces of the substrate during processing.

Abstract: A substrate processing system includes a showerhead that comprises a head portion and a stem portion and that delivers precursor gas to a processing chamber. A baffle includes a base portion having an outer diameter that is greater than an outer diameter of the head portion of the showerhead, that comprises a dielectric material and that is arranged between the head portion of the showerhead and an upper surface of the processing chamber.

Abstract: Methods of forming a film stack may include the plasma accelerated deposition of a silicon nitride film formed from the reaction of nitrogen containing precursor with silicon containing precursor, the plasma accelerated substantial elimination of silicon containing precursor from the processing chamber, the plasma accelerated deposition of a silicon oxide film atop the silicon nitride film formed from the reaction of silicon containing precursor with oxidant, and the plasma accelerated substantial elimination of oxidant from the processing chamber. Process station apparatuses for forming a film stack of silicon nitride and silicon oxide films may include a processing chamber, one or more gas delivery lines, one or more RF generators, and a system controller having machine-readable media with instructions for operating the one or more gas delivery lines, and the one or more RF generators.

Abstract: A substrate processing system includes a showerhead that comprises a head portion and a stem portion and that delivers precursor gas to a processing chamber. A baffle includes a base portion having an outer diameter that is greater than an outer diameter of the head portion of the showerhead, that comprises a dielectric material and that is arranged between the head portion of the showerhead and an upper surface of the processing chamber.

Abstract: Methods for depositing film stacks by plasma enhanced chemical vapor deposition are described. In one example, a method for depositing a film stack on a substrate, wherein the film stack includes films of different compositions and the deposition is performed in a process station in-situ, is provided. The method includes, in a first plasma-activated film deposition phase, depositing a first layer of film having a first film composition on the substrate; in a second plasma-activated deposition phase, depositing a second layer of film having a second film composition on the first layer of film; and sustaining the plasma while transitioning a composition of the plasma from the first plasma-activated film deposition phase to the second plasma-activated film deposition phase.

Abstract: Disclosed herein are methods of forming a film stack which may include the plasma accelerated deposition of a silicon nitride film formed from the reaction of nitrogen containing precursor with silicon containing precursor, the plasma accelerated substantial elimination of silicon containing precursor from the processing chamber, the plasma accelerated deposition of a silicon oxide film atop the silicon nitride film formed from the reaction of silicon containing precursor with oxidant, and the plasma accelerated substantial elimination of oxidant from the processing chamber. Also disclosed herein are process station apparatuses for forming a film stack of silicon nitride and silicon oxide films which may include a processing chamber, one or more gas delivery lines, one or more RF generators, and a system controller having machine-readable media with instructions for operating the one or more gas delivery lines, and the one or more RF generators.

Abstract: Methods and hardware for depositing film stacks in a process tool in-situ (i.e., without a vacuum break or air exposure) are described. In one example, a method for depositing, on a substrate, a film stack including films of different compositions in-situ in a process station using a plasma is described, the method including, in a first plasma-activated film deposition phase, depositing a first layer of film having a first film composition on the substrate; in a second plasma-activated deposition phase, depositing a second layer of film having a second film composition on the first layer of film; and sustaining the plasma while transitioning a composition of the plasma from the first plasma-activated film deposition phase to the second plasma-activated film deposition phase.

Abstract: An apparatus for electroplating a layer of metal on the surface of a wafer includes a second cathode located remotely with respect to the wafer. The remotely positioned second cathode allows modulation of current density at the wafer surface during an entire electroplating process. The second cathode diverts a portion of current flow from the near-edge region of the wafer and improves the uniformity of plated layers. The remote position of second cathode allows the insulating shields disposed in the plating bath to shape the current profile experienced by the wafer, and therefore act as a “virtual second cathode”. The second cathode may be positioned outside of the plating vessel and separated from it by a membrane.

Abstract: An apparatus for electroplating a layer of metal on the surface of a wafer includes an ionically resistive ionically permeable element located in close proximity of the wafer (preferably within 5 mm of the wafer surface) which serves to modulate ionic current at the wafer surface, and a second cathode configured to divert a portion of current from the wafer surface. The ionically resistive ionically permeable element in a preferred embodiment is a disk made of a resistive material having a plurality of perforations formed therein, such that perforations do not form communicating channels within the body of the disk. The provided configuration effectively redistributes ionic current in the plating system allowing plating of uniform metal layers and mitigating the terminal effect.

Abstract: An apparatus for electroplating a layer of metal on the surface of a wafer includes a second cathode located remotely with respect to the wafer. The remotely positioned second cathode allows modulation of current density at the wafer surface during an entire electroplating process. The second cathode diverts a portion of current flow from the near-edge region of the wafer and improves the uniformity of plated layers. The remote position of second cathode allows the insulating shields disposed in the plating bath to shape the current profile experienced by the wafer, and therefore act as a “virtual second cathode”. The second cathode may be positioned outside of the plating vessel and separated from it by a membrane.

Abstract: An active rinse shield designed to protect electrofill chemical baths from excessive dilution during rinse sprays on the semiconductor wafer. The shield uses overlapping blades to cover the bath, making a physical barrier between the bath chemistry and the wafer rinse water. The blades are interconnecting ribs that actuate around a common pivot axis. A linear mechanical actuator controls the blade movement, moving the top-most blade, which in turn, moves an adjacent lower blade. Each upper blade is interconnected to an adjacent lower blade by upper and lower ledges, a pivot boss and interlocking cut, and a curved ledge on each blade's body surface. The interconnecting features allow the blades to move one another out for extension or in for retraction. The interlocking blades are inclined above one another, forming grooves to redirect the rinse water away from the chemical bath.