Abstract: A method determining an angle of a trailer relative to a vehicle. The method includes generating a projection on a trailer with a projector. An image is obtained of the projection on the trailer with a camera. An angle of the trailer relative to a vehicle is determined by comparing the image of the projection with a known pattern of the projection.

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a cap structure and methods of manufacture. The structure includes: a gate structure composed of conductive gate material; sidewall spacers on the gate structure, extending above the conductive gate material; and a capping material on the conductive gate material and extending over the sidewall spacers on the gate structure.

Abstract: Methods comprising providing a semiconductor substrate; a fin disposed on the semiconductor substrate; a dummy gate disposed over the fin, wherein the dummy gate has a top at a first height above the substrate; and an interlayer dielectric (ILD) disposed over the fin and adjacent to the dummy gate, wherein the ILD has a top at a second height above the substrate, wherein the second height is below the first height; and capping the ILD with a dielectric cap, wherein the dielectric cap has a top at the first height. Systems configured to implement the methods. Semiconductor devices produced by the methods.

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a cap structure and methods of manufacture. The structure includes: a gate structure composed of conductive gate material; sidewall spacers on the gate structure, extending above the conductive gate material; and a capping material on the conductive gate material and extending over the sidewall spacers on the gate structure.

Abstract: Methods comprising providing a semiconductor substrate; a fin disposed on the semiconductor substrate; a dummy gate disposed over the fin, wherein the dummy gate has a top at a first height above the substrate; and an interlayer dielectric (ILD) disposed over the fin and adjacent to the dummy gate, wherein the ILD has a top at a second height above the substrate, wherein the second height is below the first height; and capping the ILD with a dielectric cap, wherein the dielectric cap has a top at the first height. Systems configured to implement the methods. Semiconductor devices produced by the methods.

Abstract: At least one method, apparatus and system disclosed herein involves forming semiconductor devices comprising vertically aligned gates, metal hard masks, and nitride regions. The semiconductor device may contain a semiconductor substrate; a gate disposed on the semiconductor substrate; a metal hard mask vertically aligned with the gate; a nitride region vertically aligned with the gate and the metal hard mask; and source/drain (S/D) regions disposed in proximity to the gate.

Abstract: At least one method, apparatus and system disclosed herein involves forming trench silicide region contact. A plurality of fins are formed on a semiconductor substrate. An epitaxial (EPI) feature is formed at a top portion of each fin of the first portion over a first portion of the fins. A gate region is formed over a second portion of the fins. A trench is formed in a portion of the gate region. A void is formed adjacent the a portion of the gate region. A first silicon feature is formed in the trench. A second silicon feature is formed in the void. Subsequently, a replacement metal gate (RMG) process is performed in the gate region. A TS cut region is formed over the trench. The first silicon feature and the second silicon feature are removed. A metallization process is performed in the void to form a contact.

Abstract: At least one method, apparatus and system disclosed herein involves forming trench silicide region contact. A plurality of fins are formed on a semiconductor substrate. An epitaxial (EPI) feature is formed at a top portion of each fin of the first portion over a first portion of the fins. A gate region is formed over a second portion of the fins. A replacement metal gate (RMG) process is performed in the gate region. A trench is formed in a portion of the gate region. A void is formed adjacent the a portion of the gate region. A first silicon feature is formed in the trench. A second silicon feature is formed in the void. A TS cut region is formed over the trench. The first silicon feature and the second silicon feature are removed. A metallization process is performed in the void to form a contact.

Abstract: The disclosed methods may include depositing an amorphous carbon layer, a SiCN layer, and a TEOS layer; planarizing the semiconductor structure; performing a non-selective etch to remove the SiCN layer, the TEOS layer, and a portion of the amorphous carbon layer; and performing a selective etch of the amorphous carbon layer. The methods may reduce step height differences between first and second regions of the semiconductor structure.

Abstract: The Cover Keeper is a universal head-cover retention device that keeps golfers from losing head-covers. The bar latching safety pins allows for connection onto any head-cover, as well as switching head-covers in and out with ease. It allows for two head-covers to be connected together or one head-cover to be connected to the golf bag. The elastic cord allows the golfer to take off and put on head-covers with ease. The barrel swivels keep the cords from tangling, especially on windy days. The Cover Keeper badge allows for custom logos, promotional advertising, storage for metal ball markers, and the ability to decorate head-covers with charms.

Abstract: A shift mechanism for a vehicle wheel wherein a pneumatic annular actuator, through air pressurization and depressurization, produces clutch ring movement to engage and disengage the wheel from the vehicle's drive axle. The components of the wheel end providing an air tight cavity in which the clutch ring is manipulated and which is subjected to air pressure changes. The components include a pneumatic annular actuator, a CV-joint, a rotary seal between the actuator and the CV-joint and a vent passage formed between the air chamber and rotary seal and breaching said air tight cavity. An air line from said passage to non-contaminated ambient air to provide continuous ambient air pressure to said cavity.

Abstract: A shift mechanism for a vehicle wheel wherein a pneumatic annular actuator, through air pressurization and depressurization, produces clutch ring movement to engage and disengage the wheel from the vehicle's drive axle. The components of the wheel end providing an air tight cavity in which the clutch ring is manipulated and which is subjected to air pressure changes. The components include a pneumatic annular actuator, a CV-joint, a rotary seal between the actuator and the CV-joint and a vent passage formed between the air chamber and rotary seal and breaching said air tight cavity. An air line from said passage to non-contaminated ambient air to provide continuous ambient air pressure to said cavity.