Patents by Inventor Patrick D. Flynn

Patrick D. Flynn has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • SiC Single Crystal Sublimation Growth Apparatus
    Publication number: 20190249332
    Abstract: A physical vapor transport growth system includes a growth chamber charged with SiC source material and a SiC seed crystal in spaced relation and an envelope that is at least partially gas-permeable disposed in the growth chamber. The envelope separates the growth chamber into a source compartment that includes the SiC source material and a crystallization compartment that includes the SiC seed crystal. The envelope is formed of a material that is reactive to vapor generated during sublimation growth of a SiC single crystal on the SiC seed crystal in the crystallization compartment to produce C-bearing vapor that acts as an additional source of C during the growth of the SiC single crystal on the SiC seed crystal.
    Type: Application
    Filed: March 29, 2019
    Publication date: August 15, 2019
    Inventors: Avinash K. Gupta, Ilya Zwieback, Edward Semenas, Marcus L. Getkin, Patrick D. Flynn
  • SiC single crystal sublimation growth method and apparatus
    Patent number: 10294584
    Abstract: A physical vapor transport growth system includes a growth chamber charged with SiC source material and a SiC seed crystal in spaced relation and an envelope that is at least partially gas-permeable disposed in the growth chamber. The envelope separates the growth chamber into a source compartment that includes the SiC source material and a crystallization compartment that includes the SiC seed crystal. The envelope is formed of a material that is reactive to vapor generated during sublimation growth of a SiC single crystal on the SiC seed crystal in the crystallization compartment to produce C-bearing vapor that acts as an additional source of C during the growth of the SiC single crystal on the SiC seed crystal.
    Type: Grant
    Filed: March 25, 2010
    Date of Patent: May 21, 2019
    Assignee: II-VI INCORPORATED
    Inventors: Avinash K. Gupta, Ilya Zwieback, Edward Semenas, Marcus L. Getkin, Patrick D. Flynn
  • SIC SINGLE CRYSTAL SUBLIMATION GROWTH METHOD AND APPARATUS
    Publication number: 20120103249
    Abstract: A physical vapor transport growth system includes a growth chamber charged with SiC source material and a SiC seed crystal in spaced relation and an envelope that is at least partially gas-permeable disposed in the growth chamber. The envelope separates the growth chamber into a source compartment that includes the SiC source material and a crystallization compartment that includes the SiC seed crystal. The envelope is formed of a material that is reactive to vapor generated during sublimation growth of a SiC single crystal on the SiC seed crystal in the crystallization compartment to produce C-bearing vapor that acts as an additional source of C during the growth of the SiC single crystal on the SiC seed crystal.
    Type: Application
    Filed: March 25, 2010
    Publication date: May 3, 2012
    Applicant: II-VI INCORPORATED
    Inventors: Avinash K. Gupta, Ilya Zwieback, Edward Semenas, Marcus L. Getkin, Patrick D. Flynn