Abstract: An apparatus produces a doped Czochralski crystal. The apparatus includes: a pressure vessel; a crucible in the pressure vessel for containing liquid silicon; and a second apparatus for doping the melt. The second apparatus includes: a housing; a reservoir vessel holding a dopant; a conveyor belt conveying the dopant; a third apparatus for shaping a dumped bed on the conveyor belt; and a pipe whose first end is accessible by the dopant from the conveyor belt and whose second end points in a direction of the liquid silicon and is closed off from the liquid silicon. The third apparatus has a half-pipe having a diameter smaller than a width of the conveyor belt, which is closed on one side, the other side being open, and is arranged over the conveyor belt such that the open side points in the direction of conveyance of the dopant.