Patents by Inventor Patrick FIORENZA

Patrick FIORENZA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220208977
    Abstract: An electronic device comprising: a semiconductor body of silicon carbide, SiC, having a first and a second face, opposite to one another along a first direction, which presents positive-charge carriers at said first face that form a positive interface charge; a first conduction terminal, which extends at the first face of the semiconductor body; a second conduction terminal, which extends on the second face of the semiconductor body; a channel region in the semiconductor body, configured to house, in use, a flow of electrons between the first conduction terminal and the second conduction terminal; and a trapping layer, of insulating material, which extends in electrical contact with the semiconductor body at said channel region and is designed so as to present electron-trapping states that generate a negative charge such as to balance, at least in part, said positive interface charge.
    Type: Application
    Filed: March 18, 2022
    Publication date: June 30, 2022
    Applicant: STMICROELECTRONICS S.R.L.
    Inventors: Patrick FIORENZA, Fabrizio ROCCAFORTE, Mario Giuseppe SAGGIO
  • Publication number: 20220208961
    Abstract: A MOSFET transistor device includes a functional layer of silicon carbide, having a first conductivity type. Gate structures are formed on a top surface of the functional layer and each includes a dielectric region and an electrode region. Body wells having a second conductivity type are formed within the functional layer, and the body wells are separated from one another by surface-separation regions. Source regions having the first conductivity type are formed within the body wells, laterally and partially underneath respective gate structures. Modified-doping regions are arranged in the surface-separation regions centrally thereto, underneath respective gate structures, in particular underneath the corresponding dielectric regions, and have a modified concentration of dopant as compared to the concentration of the functional layer.
    Type: Application
    Filed: December 22, 2021
    Publication date: June 30, 2022
    Applicant: STMicroelectronics S.r.l.
    Inventors: Patrick FIORENZA, Fabrizio ROCCAFORTE, Edoardo ZANETTI, Mario Giuseppe SAGGIO
  • Patent number: 11316025
    Abstract: An electronic device comprising: a semiconductor body of silicon carbide, SiC, having a first and a second face, opposite to one another along a first direction, which presents positive-charge carriers at said first face that form a positive interface charge; a first conduction terminal, which extends at the first face of the semiconductor body; a second conduction terminal, which extends on the second face of the semiconductor body; a channel region in the semiconductor body, configured to house, in use, a flow of electrons between the first conduction terminal and the second conduction terminal; and a trapping layer, of insulating material, which extends in electrical contact with the semiconductor body at said channel region and is designed so as to present electron-trapping states that generate a negative charge such as to balance, at least in part, said positive interface charge.
    Type: Grant
    Filed: May 22, 2020
    Date of Patent: April 26, 2022
    Assignee: STMICROELECTRONICS S.R.L.
    Inventors: Patrick Fiorenza, Fabrizio Roccaforte, Mario Giuseppe Saggio
  • Publication number: 20200373398
    Abstract: An electronic device comprising: a semiconductor body of silicon carbide, SiC, having a first and a second face, opposite to one another along a first direction, which presents positive-charge carriers at said first face that form a positive interface charge; a first conduction terminal, which extends at the first face of the semiconductor body; a second conduction terminal, which extends on the second face of the semiconductor body; a channel region in the semiconductor body, configured to house, in use, a flow of electrons between the first conduction terminal and the second conduction terminal; and a trapping layer, of insulating material, which extends in electrical contact with the semiconductor body at said channel region and is designed so as to present electron-trapping states that generate a negative charge such as to balance, at least in part, said positive interface charge.
    Type: Application
    Filed: May 22, 2020
    Publication date: November 26, 2020
    Inventors: Patrick FIORENZA, Fabrizio ROCCAFORTE, Mario Giuseppe SAGGIO