Patents by Inventor PATRICK FRIEDMANN

PATRICK FRIEDMANN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • MONOLITHIC DIODE LASER ARRANGEMENT AND METHOD FOR PRODUCING THE MONOLITHIC DIODE LASER
    Publication number: 20180034243
    Abstract: A monolithic diode laser arrangement contains a plurality of individual emitters which are arranged adjacent to one another on a common supporting substrate and which in each case have contact windows for electrical contact which are arranged on the respective individual emitters on a front face opposite the supporting substrate. A method for producing such a diode laser arrangement and a laser device having such a diode laser arrangement are further described.
    Type: Application
    Filed: October 10, 2017
    Publication date: February 1, 2018
    Inventors: MARC KELEMEN, SASCHA HILZENSAUER, JUERGEN GILLY, PATRICK FRIEDMANN, JENS BIESENBACH
  • High-power diode laser and method for producing a high-power diode laser
    Patent number: 9450375
    Abstract: In a high-power diode laser, facets which lie opposite one another contain in each case an amorphous layer system composed of silicon and carbon. The layer system is formed to perform the function both of a passivation layer and of the reflection-determining functional layers. This measure makes it possible to produce a high-power diode laser having a high COD threshold in conjunction with a long service life by way of a simplified method.
    Type: Grant
    Filed: August 30, 2010
    Date of Patent: September 20, 2016
    Assignee: M2K-Laser GmbH
    Inventors: Márc Kelemen, Rudolf Moritz, Jürgen Gilly, Patrick Friedmann
  • HIGH-POWER DIODE LASER AND METHOD FOR PRODUCING A HIGH-POWER DIODE LASER
    Publication number: 20110051767
    Abstract: In a high-power diode laser, facets which lie opposite one another contain in each case an amorphous layer system composed of silicon and carbon. The layer system is formed to perform the function both of a passivation layer and of the reflection-determining functional layers. This measure makes it possible to produce a high-power diode laser having a high COD threshold in conjunction with a long service life by way of a simplified method.
    Type: Application
    Filed: August 30, 2010
    Publication date: March 3, 2011
    Applicant: M2K-LASER GMBH
    Inventors: MÁRC KELEMEN, RUDOLF MORITZ, JÜRGEN GILLY, PATRICK FRIEDMANN