Abstract: The invention relates to a method for cancelling distortion and displacement of a three-dimensional image perceived by a viewer of an autostereoscopic display device, wherein the cancelling is performed by taking into account 1) the refraction properties of the display device; 2) the position of each pixel in the display device; and 3) the viewing position of the eyes of the viewer. In this way, the viewer can have a more realistic perception of three-dimensional virtual content. This includes e.g. an improved look-around effect for the viewer and an improved interaction of the viewer with the displayed three-dimensional virtual content. Preferably, the cancelling of the distortion and/or displacement is performed by using a refraction model for the display device.

Abstract: The disclosure relates to a switching process for switching in an autostereoscopic display device from a first view mode to a second view mode, wherein the autostereoscopic display device comprises a display panel, a lenticular device and means for applying a voltage, the process comprising the application of a switching voltage across both switching electrodes of the lenticular device wherein a ramp voltage is applied that increases during a ramp period of at least 0.50 second from a starting voltage at which the lenticular device is in its, first view mode to a final voltage at which the lenticular device is in its second view mode, wherein during at least 0.40 second of the ramp period, the ramp voltage is at an intermediate voltage that is in the range of 5-60% of the minimal voltage; and the final voltage is equal to or higher than minimal voltage.

Abstract: The disclosure relates to a switching process for switching in an autostereoscopic display device from a first view mode to a second view mode, wherein the autostereoscopic display device comprises a display panel, a lenticular device and means for applying a voltage, the process comprising the application of a switching voltage across both switching electrodes of the lenticular device wherein a ramp voltage is applied that increases during a ramp period of at least 0.50 second from a starting voltage at which the lenticular device is in its, first view mode to a final voltage at which the lenticular device is in its second view mode, wherein during at least 0.40 second of the ramp period, the ramp voltage is at an intermediate voltage that is in the range of 5-60% of the minimal voltage; and the final voltage is equal to or higher than minimal voltage.

Abstract: A method to manufacture a thin film photovoltaic device is provided. The method involves mastering of sub-micron features onto a first master substrate, followed by duplication of the master surface onto one or multiple stampers, and replication of the micro-texture into the superstrate or substrate surface by using the multiple stampers. The method also discloses depositing a TCO layer on the superstrate or substrate surface having the sub-micron features, such that a side of the TCO layer distant from the superstrate or substrate surface having the sub-micron features. Thereafter, the method includes depositing the one or more semiconductor layers, the back contact layer and the cover substrate.

Abstract: The present invention relates to a method for providing a high density relief structure in a recording stack (10) of a master substrate (12), particularly a master substrate (12) for making a stamper for the mass-fabrication of optical discs or a master substrate for creating a stamp for micro contact printing, the method comprising the following steps: —providing a recording stack (10) comprising a dielectric layer (14) and means (16, 18; 20) for supporting heat induced phase transitions within the dielectric layer (14); causing a heat induced phase transition in regions (22) of the dielectric layer (14) where pits (24) are to be formed by applying laser pulses; and removing the regions (22) of the dielectric layer (14), which have experienced a phase transition, by an etching process; or removing the regions (26) of the dielectric layer (14), which have not experienced a phase transition, by an etching process.