Patents by Inventor Patrick Haibach

Patrick Haibach has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of forming contacts using auxiliary structures
    Patent number: 7416976
    Abstract: A semiconductor product includes a substrate having a substrate surface. A plurality of wordlines are arranged at a distance from one another and running along a first direction. A plurality of conductive contact structures are provided between the wordlines. The product also includes a plurality of filling structures. Each filling structure separates from one another two respective contact structures arranged between two respective wordlines. The two respective contact structures are arranged at a distance from one another in the first direction. In the preferred embodiment, the contact structures have a top side provided at a distance from the substrate surface and extends to the substrate surface. The contact structures at the substrate surface have a width along the first direction that is larger than a width of the top sides of the contact structures along the first direction.
    Type: Grant
    Filed: August 31, 2005
    Date of Patent: August 26, 2008
    Assignee: Infineon Technologies AG
    Inventors: Josef Willer, Patrick Haibach, Christoph Andreas Kleint, Nicolas Nagel
  • Semiconductor product and method for forming a semiconductor product
    Publication number: 20070048993
    Abstract: A semiconductor product includes a substrate having a substrate surface. A plurality of wordlines are arranged at a distance from one another and running along a first direction. A plurality of conductive contact structures are provided between the wordlines. The product also includes a plurality of filling structures. Each filling structure separates from one another two respective contact structures arranged between two respective wordlines. The two respective contact structures are arranged at a distance from one another in the first direction. In the preferred embodiment, the contact structures have a top side provided at a distance from the substrate surface and extends to the substrate surface. The contact structures at the substrate surface have a width along the first direction that is larger than a width of the top sides of the contact structures along the first direction.
    Type: Application
    Filed: August 31, 2005
    Publication date: March 1, 2007
    Inventors: Josef Willer, Patrick Haibach, Christoph Kleint, Nicolas Nagel
  • Method for fabricating a drain/source path
    Publication number: 20060054979
    Abstract: A method for fabricating a drain/source path is provided, in which essentially firstly a nitride layer is applied, on which a TEOS layer is then patterned. The patterning is effected in a simplified manner by virtue of the fact that the nitride layer acts as an etching stop layer during the etching away of the TEOS layer.
    Type: Application
    Filed: December 13, 2004
    Publication date: March 16, 2006
    Inventors: Philipp Kratzert, Norbert Schulze, Juerg Haufe, Roland Haberkern, Stephan Riedel, Patrick Haibach