Abstract: A mechanism for dynamically allocating tasks among multiple UAVs operating autonomously during a mission is discussed. Task assignment is adjusted by each UAV dynamically during the mission based on criteria related to the individual UAV's operational status and/or mission parameters. Task allocation is determined independently without group communication between the UAVs actively taking part in the mission and without direct communication to a ground-based controller. A communication UAV provides a shared memory space that may be utilized by each UAV in determining its own task allocation.

Abstract: A mechanism for dynamically allocating tasks among multiple UAVs operating autonomously during a mission is discussed. Task assignment is adjusted by each UAV dynamically during the mission based on criteria related to the individual UAV's operational status and/or mission parameters. Task allocation is determined independently without group communication between the UAVs actively taking part in the mission and without direct communication to a ground-based controller. A communication UAV provides a shared memory space that may be utilized by each UAV in determining its own task allocation.

Abstract: The Z Bracket is a bracket that leans the post back from a 90 degree by 10 degrees with an 80 degree angle that allows the post to have more strength to hold a shade connected to the post and to a building opposite the post and bracket and gives the overall appearance unique and practical for patio areas and any area which a shaded area is preferred.

Abstract: A development subsystem is used to develop toner particles transported by semiconductive carrier particles.

Abstract: A development subsystem is used to develop developer having semiconductive carrier particles and toner particles. The development subsystem includes a developer housing, for retaining a quantity of developer having semiconductive carrier particles and toner particles, a first magnetic roll having a stationary core with at least one magnet and a sleeve that rotates about the stationary core of the first magnetic roll, a second magnetic roll having a stationary core with at least one magnet and a sleeve that rotates about the stationary core of the second magnetic roll, and a motor coupled to the first and the second magnetic rolls to drive the rotating sleeves of the first and the second magnetic rolls in a direction that is against the direction of a photoreceptor that rotates in proximity to the first and the second magnetic rolls. The first and the second magnetic rolls carry semiconductive carrier particles and toner particles through a development zone formed by the first and the second magnetic rolls.

Abstract: A method of forming the active region of an optoelectronic device incorporating semiconductor quantum dots whose ground state emission occurs at wavelengths beyond 1350 nm at a temperature of substantially 293 K is provided by forming a first layer of quantum dots covered by a spacer layer with strained areas extending there through. The spacer layer then forms a template upon which quantum dots of an active layer may be formed with a surface with a surface density and formation that is influenced by the underlying first layer of quantum dots. This allows a choice of growth parameters more favourable to the formation of quantum dots in the active layer emitting at long wavelengths with a narrow inhomogeneous broadening. As an example, the active layer of quantum dots may be formed at a lower temperature than the first layer of quantum dots.

Abstract: A method of forming the active region of an optoelectronic device incorporating semiconductor quantum dots whose ground state emission occurs at wavelengths beyond 1350 nm at a temperature of substantially 293 K is provided by forming a first layer of quantum dots covered by a spacer layer with strained areas extending there through. The spacer layer then forms a template upon which quantum dots of an active layer may be formed with a surface with a surface density and formation that is influenced by the underlying first layer of quantum dots. This allows a choice of growth parameters more favourable to the formation of quantum dots in the active layer emitting at long wavelengths with a narrow inhomogeneous broadening. As an example, the active layer of quantum dots may be formed at a lower temperature than the first layer of quantum dots.