Patents by Inventor Patrick J. Carroll

Patrick J. Carroll has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6941867
    Abstract: A pyrotechnic initiator having an initiator including a relatively low monolithic ignition charge that is separated from an overlying output charge by an intermediary slip plane. The slip plane may simply be a non-integral junction between monolithic ignition and output charges, or it may be a junction between a monolithic ignition charge and a non-monolithic output charge, or it may be a void or barrier between the ignition and output charges.
    Type: Grant
    Filed: July 1, 2002
    Date of Patent: September 13, 2005
    Assignee: Special Devices, Inc.
    Inventors: Robert N. Renz, Vahan Avetisian, Patrick J. Carroll
  • Publication number: 20040217475
    Abstract: A novel contact structure and method for a multilayer gettering contact metallization is provided utilizing a thin layer of a pure metal as the initial layer formed on a semiconductor cap layer. During formation of the contact structure, this thin metal layer reacts with the cap layer and the resulting reacted layer traps mobile impurities and self-interstitials diffusing within the cap layer and in nearby metal layers, preventing further migration into active areas of the semiconductor device. The contact metallization is formed of pure metal layers compatible with each other and with the underlying semiconductor cap layer such that depth of reaction is minimized and controllable by the thickness of the metal layers applied. Thin semiconductor cap layers, such as InGaAs cap layers less than 200 nm thick, may be used in the present invention with extremely thin pure metal layers of thickness 10 nm or less, thus enabling an increased level of integration for semiconductor optoelectronic devices.
    Type: Application
    Filed: May 27, 2004
    Publication date: November 4, 2004
    Inventors: Gustav E. Derkits, William R. Heffner, Padman Parayanthal, Patrick J. Carroll, Ranjani C. Muthiah
  • Publication number: 20030141599
    Abstract: A novel contact structure and method for a multilayer gettering contact metallization is provided utilizing a thin layer of a pure metal as the initial layer formed on a semiconductor cap layer. During formation of the contact structure, this thin metal layer reacts with the cap layer and the resulting reacted layer traps mobile impurities and self-interstitials diffusing within the cap layer and in nearby metal layers, preventing further migration into active areas of the semiconductor device. The contact metallization is formed of pure metal layers compatible with each other and with the underlying semiconductor cap layer such that depth of reaction is minimized and controllable by the thickness of the metal layers applied. Thin semiconductor cap layers, such as InGaAs cap layers less than 200 nm thick, may be used in the present invention with extremely thin pure metal layers of thickness 10 nm or less, thus enabling an increased level of integration for semiconductor optoelectronic devices.
    Type: Application
    Filed: February 4, 2003
    Publication date: July 31, 2003
    Inventors: Gustav E. Derkits, William R. Heffner, Padman Parayanthal, Patrick J. Carroll, Ranjani C. Muthiah
  • Patent number: 6555457
    Abstract: A novel contact structure and method for a multilayer gettering contact metallization is provided utilizing a thin layer of a pure metal as the initial layer formed on a semiconductor cap layer. During formation of the contact structure, this thin metal layer reacts with the cap layer and the resulting reacted layer traps mobile impurities and self-interstitials diffusing within the cap layer and in nearby metal layers, preventing further migration into active areas of the semiconductor device. The contact metallization is formed of pure metal layers compatible with each other and with the underlying semiconductor cap layer such that depth of reaction is minimized and controllable by the thickness of the metal layers applied. Thin semiconductor cap layers, such as InGaAs cap layers less than 200 nm thick, may be used in the present invention with extremely thin pure metal layers of thickness 10 nm or less, thus enabling an increased level of integration for semiconductor optoelectronic devices.
    Type: Grant
    Filed: April 7, 2000
    Date of Patent: April 29, 2003
    Assignee: Triquint Technology Holding Co.
    Inventors: Gustav E. Derkits, Jr., William R. Heffner, Padman Parayanthal, Patrick J. Carroll, Ranjani C. Muthiah
  • Patent number: 5296192
    Abstract: Disclosed is a multi-layered test strip device for receiving whole blood on which a test for a suspected analyte is performed. The test confirms the presence, absence, or the amount of analyte, if present. The multi-layered device comprises two outside support layers between which are, in descending order relative to the horizontal plane, a) a spreading screen having defined characteristics, b) a separating layer which removes red blood cells at least partially via a red blood cell binding agent, and c) a membrane reagent layer; wherein the screen and each layer is in close and contiguous contact with the layer which follows it, and wherein at least one of layers a), b), and c) is conditioned by a pre-treatment.The screen can have openings of from 10-200 microns. The blood cell binding agents are antibodies to red blood cells, chemical agents, or lectins. The separating layer has screen opening of preferably 20-200 microns.
    Type: Grant
    Filed: April 3, 1992
    Date of Patent: March 22, 1994
    Assignee: Home Diagnostics, Inc.
    Inventors: Patrick J. Carroll, Robin A. Wiscovitch
  • Patent number: 4007825
    Abstract: A vibratory parts feeder has a feeder bowl with a helical track originating at the bottom of the bowl and extending upwardly along the inner periphery of the bowl wall to an exit station at the top of the bowl. Articles can be progressively fed from the lower portion of the bowl along the helical track to the exit station at a given feed rate by vibratory energy. The feeder bowl and its mounting frame form a feeder bowl mass that is supported above a base mass by a plurality of inclined leaf springs. One end of each spring is connected to the feeder bowl mass and an opposite end of the spring is connected to the base mass. The leaf springs are arranged to move one of the masses vertically in response to rotational twisting of one of the masses relative to the other mass about a central vertical axis of the feeder.
    Type: Grant
    Filed: August 5, 1975
    Date of Patent: February 15, 1977
    Assignee: FMC Corporation
    Inventors: William V. Spurlin, Patrick J. Carroll