Patents by Inventor Patrick J. Klersy
Patrick J. Klersy has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7576350Abstract: An electrically programmable memory element comprising a programmable resistance material and an electrical contact. The electrical contact having at least two portion wherein the first portion has a higher resistivity than the second portion.Type: GrantFiled: July 15, 2004Date of Patent: August 18, 2009Assignee: Ovonyx, Inc.Inventors: Tyler Lowrey, Stephen J. Hudgens, Patrick J. Klersy
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Patent number: 7407829Abstract: A method of making an electrically programmable memory element, comprising: providing a first dielectric layer; forming a conductive material over the first dielectric layer; forming a second dielectric layer over the conductive material; and forming a programmable resistance material in electrical contact with a peripheral surface of the conductive material.Type: GrantFiled: March 12, 2004Date of Patent: August 5, 2008Assignee: Ovonyx, Inc.Inventors: Tyler Lowrey, Stanford R. Ovshinsky, Guy C. Wicker, Patrick J. Klersy, Boil Pashmakov, Wolodymyr Czubatyj, Sergey A. Kostylev
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Patent number: 6998289Abstract: A phase-change memory may be formed with at least two phase-change material layers separated by a barrier layer. The use of more than one phase-change layer enables a reduction in the programming volume while still providing adequate thermal insulation.Type: GrantFiled: November 21, 2002Date of Patent: February 14, 2006Assignee: Intel CorporationInventors: Stephen J. Hudgens, Tyler A. Lowrey, Patrick J. Klersy
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Patent number: 6969866Abstract: A memory element comprising a volume of phase change memory material; and first and second contact for supplying an electrical signal to the memory material, wherein the first contact comprises a conductive sidewall spacer. Alternately, the first contact may comprise a contact layer having an edge adjacent to the memory material.Type: GrantFiled: March 25, 1999Date of Patent: November 29, 2005Assignee: Ovonyx, Inc.Inventors: Tyler Lowrey, Stanford R. Ovshinsky, Guy C. Wicker, Patrick J. Klersy, Boil Pashmakov, Wolodymyr Czubatyj, Sergey A. Kostylev
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Publication number: 20040245603Abstract: A method of making an electrically programmable memory element, comprising: providing a first dielectric layer; forming a conductive material over the first dielectric layer; forming a second dielectric layer over the conductive material; and forming a programmable resistance material in electrical contact with a peripheral surface of the conductive material.Type: ApplicationFiled: March 12, 2004Publication date: December 9, 2004Inventors: Tyler Lowrey, Stanford R. Ovshinsky, Guy C. Wicker, Patrick J. Klersy, Boil Pashmakov, Wolodymyr Czubatyj, Sergey A. Kostylev
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Patent number: 6764897Abstract: A method of making an electrically operated memory element. The memory element having a contact in electrical communication with a memory material programmable to at least a first resistance state and a second resistance state. Preferably, the contact includes at least a first region having a first resistivity and a second region having a second resistivity greater than the first resistivity where the more resistive region is adjacent to the memory material.Type: GrantFiled: August 26, 2003Date of Patent: July 20, 2004Assignee: Ovonyx, Inc.Inventors: Tyler Lowrey, Stephen J. Hudgens, Patrick J. Klersy
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Publication number: 20040038445Abstract: A method of making an electrically operated memory element. The memory element having a contact in electrical communication with a memory material programmable to at least a first resistance state and a second resistance state. Preferably, the contact includes at least a first region having a first resistivity and a second region having a second resistivity greater than the first resistivity where the more resistive region is adjacent to the memory material.Type: ApplicationFiled: August 26, 2003Publication date: February 26, 2004Inventors: Tyler Lowrey, Stephen J. Hudgens, Patrick J. Klersy
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Patent number: 6674115Abstract: A phase-change memory may be formed with at least two phase-change material layers separated by a barrier layer. The use of more than one phase-change layer enables a reduction in the programming volume while still providing adequate thermal insulation.Type: GrantFiled: December 4, 2002Date of Patent: January 6, 2004Assignee: Intel CorporationInventors: Stephen J. Hudgens, Tyler A. Lowrey, Patrick J. Klersy
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Patent number: 6617192Abstract: An electrically operated memory element having a contact in electrical communication with a memory material programmable to at least a first resistance state and a second resistance state. Preferably, the contact includes at least a first region having a first resistivity and a second region having a second resistivity greater than the first resistivity where the more resistive region is adjacent to the memory material.Type: GrantFiled: October 3, 2000Date of Patent: September 9, 2003Assignee: Ovonyx, Inc.Inventors: Tyler Lowrey, Stephen J. Hudgens, Patrick J. Klersy
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Publication number: 20030080427Abstract: A phase-change memory may be formed with at least two phase-change material layers separated by a barrier layer. The use of more than one phase-change layer enables a reduction in the programming volume while still providing adequate thermal insulation.Type: ApplicationFiled: December 4, 2002Publication date: May 1, 2003Inventors: Stephen J. Hudgens, Tyler A. Lowrey, Patrick J. Klersy
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Publication number: 20030071289Abstract: A phase-change memory may be formed with at least two phase-change material layers separated by a barrier layer. The use of more than one phase-change layer enables a reduction in the programming volume while still providing adequate thermal insulation.Type: ApplicationFiled: November 21, 2002Publication date: April 17, 2003Inventors: Stephen J. Hudgens, Tyler A. Lowrey, Patrick J. Klersy
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Patent number: 6507061Abstract: A phase-change memory may be formed with at least two phase-change material layers separated by a barrier layer. The use of more than one phase-change layer enables a reduction in the programming volume while still providing adequate thermal insulation.Type: GrantFiled: August 31, 2001Date of Patent: January 14, 2003Assignee: Intel CorporationInventors: Stephen J. Hudgens, Tyler A. Lowrey, Patrick J. Klersy
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Patent number: 6087674Abstract: An electrically operated, single cell memory element comprising: a volume of memory material defining a single-cell memory element, the memory material comprising a heterogeneous mixture of a phase-change material and a dielectric material; and means for delivering an electrical signal to at least a portion of the volume of memory material. An electrically operated, single-cell memory element comprising: a volume of memory material defining the single-cell memory element, the memory material comprising a phase-change material and a dielectric material where the phase-change material has a plurality of detectable resistivity values and can be set directly to one of the resistivity values without the need to be set to a specific starting or erased resistivity value, regardless of the previous resistivity value of the material, in response to an electrical signal; and means for delivering the electrical signal to at least a portion of the volume of memory material.Type: GrantFiled: April 20, 1998Date of Patent: July 11, 2000Assignee: Energy Conversion Devices, Inc.Inventors: Standford R. Ovshinsky, Wolodymyr Czubatyj, David A. Strand, Patrick J. Klersy, Sergey Kostylev, Boil Pashmakov
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Patent number: 6075719Abstract: A method of programming an electrically programmable phase-change memory element to the low resistance state. A first pulse of energy sufficient to transform the device from the low to high resistance states is applied, and a second pulse of energy sufficient to transform the device from the high to low resistance states is applied following the first pulse. In another programming method, the present and desired device states are compared, and programming pulses are applied only if the state of the device needs to be changed.Type: GrantFiled: June 22, 1999Date of Patent: June 13, 2000Assignee: Energy Conversion Devices, Inc.Inventors: Tyler Lowrey, Guy C. Wicker, Boil Pashmakov, Patrick J. Klersy, Sergey A. Kostylev, Wolodymyr Czubatyj
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Patent number: 5330630Abstract: The first fire voltage of chalcogenide-based switching devices is lowered to a value approximately equal to the threshold voltage by treatment of the chalcogenide material with fluorine either during or after deposition.Type: GrantFiled: January 2, 1991Date of Patent: July 19, 1994Assignee: Energy Conversion Devices, Inc.Inventors: Patrick J. Klersy, Stanford R. Ovshinsky
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Patent number: 5177567Abstract: Disclosed herein is a novel thin-film structure for solid state thin-film electrical switching devices fabricated of chalcogenide material that overcomes a number of design weaknesses existing in the prior art. The novel structure of the instant invention employs a thin layer of insulating material beneath the body of chalcogenide material so as to carefully define the filament location. Since the filament location has been fixed, switching, due to edge conduction pathways has been substantially eliminated. At the same time, the use of a thin insulating layer precludes step coverage faults of the prior art. The requirement for the thin layer of insulator material to withstand the switching voltage is addressed through the use of a second thicker layer of insulator material which is deposited only after the chalcogenide material has been formed. This improved structure demonstrates the advantages of higher fabrication yields and more repeatable electrical switching characteristics.Type: GrantFiled: July 19, 1991Date of Patent: January 5, 1993Assignee: Energy Conversion Devices, Inc.Inventors: Patrick J. Klersy, David C. Jablonski, Stanford R. Ovshinsky
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Patent number: 4804490Abstract: A method of stabilizing the switching characteristics of a thin film chalcogenide glass material by subjecting said material to a hydrogenated atmosphere, preferably activated hydrogen and argon. It is also preferred to provide a post hydrogenation anneal step.Type: GrantFiled: October 13, 1987Date of Patent: February 14, 1989Assignee: Energy Conversion Devices, Inc.Inventors: Roger W. Pryor, Patrick J. Klersy, Jerry A. Piontkowski, Napolean P. Formigoni