Abstract: The invention provides a luminescent material comprising wavelength converter nanoparticles (120) with siloxane polymer capping ligands (130) associated to the wavelength converter nanoparticles (120), wherein the siloxane polymer capping ligands (130) comprise siloxane polymers which comprise at least one capping group comprising a terminal carboxylic acid group, wherein the capping group comprises in total at least six carbon atoms.

Abstract: The invention provides a method for the production of a luminescent material, (10) based on coated quantum dots (100), comprising: (i) providing luminescent quantum dots (100) in a liquid medium (20) wherein the luminescent quantum dots (100) have an outer layer (105) comprising first cations and first anions; and (ii) providing in a coating process a coating (120) on the outer layer (105) of the quantum dots (100) in the liquid medium (20), wherein the coating (120) comprises a silica coating; wherein during the coating process, or after the coating process, or during and after the coating process, the liquid medium (20) comprises one or more of a third element and a fourth element, wherein the first cation and the third element belong to the same group of the periodic system, and wherein the first anion and the fourth element belong to the same group of the periodic system.

Abstract: The invention provides a luminescent material (10) based on quantum dots (100), wherein the quantum dots (100) have inorganic capping agents (110), wherein the luminescent material (10) comprises particles (12) having an inorganic salt matrix (14) hosting the quantum dots (100) with inorganic capping agents (110), wherein the luminescent quantum dots (100) have an outer layer (105). The invention also provides a method for the production of such luminescent material (10). The new luminescent material can be used and processed as conventional particulate luminescent material.

Abstract: The invention provides a process for the production of a wavelength converter containing a siloxane polymer matrix with wavelength converter nano particles embedded therein, the process containing (a) mixing (i) a first liquid containing (i1) short chain siloxane polymers and (i2) wavelength converter nano particles having an outer surface grafted with siloxane grafting ligands and (ii) curable siloxane polymers, and (b) curing the curable siloxane polymers, thereby producing the wavelength converter (100); wherein the short chain siloxane polymers have s1 Si backbone elements, wherein the siloxane grafting ligands comprise siloxane grafting ligands having x1 Si backbone elements, wherein at least one Si backbone element of each siloxane grafting ligand comprises a group having a grafting functionality; and wherein the curable siloxane polymers have y1 Si backbone elements, wherein x1/s1?0.8, s1<y1 and wherein x1<y1.

Abstract: The invention provides a process for the production of a (particulate) luminescent material comprising particles, especially substantially spherical particles, having a porous inorganic material core with pores, especially macro pores, which are at least partly filled with a polymeric material with luminescent quantum dots embedded therein, wherein the process comprises (i) impregnating the particles of a particulate porous inorganic material with pores with a first liquid (“ink”) comprising the luminescent quantum dots and a curable or polymerizable precursor of the polymeric material, to provide pores that are at least partly filled with said luminescent quantum dots and curable or polymerizable precursor; and (ii) curing or polymerizing the curable or polymerizable precursor within pores of the porous material, as well as a product obtainable thereby.

Abstract: The invention provides a luminescent material (10) comprising quantum dots (100), wherein the luminescent material (10) further comprises a capping agent (110) coordinating to the quantum dots (10), wherein the capping agent comprises MxOy(OH)zn, wherein M is selected from the group consisting of B, Al, P, S, V, Zn, Ga, Ge, As, Se, Nb, Mo, Cd, In, Sn, Sb, Te, Ta and W, wherein x?1, y+z?1, and wherein n indicates a positive or negative charge of the capping agent.

Abstract: The invention provides a lighting device comprising (a) a light converter comprising a light receiving face; and (b) a solid state light source configured to generate a light source light with a photon flux of at least 10 W/cm2 at the light receiving face, wherein the light converter is configured to convert at least part of the light source light into light converter light having a first frequency, wherein the light converter comprises a semiconductor quantum dot in an optical structure selected from a photonic crystal structure and a plasmonic structure, wherein the optical structure is configured to increase the photon density of states in the light converter resonant with the first frequency for reducing saturation quenching, and wherein the quantum dot has a quantum efficiency of at least 80%.

Abstract: The invention provides a process for the production of a light converter comprising a siloxane polymer matrix with light converter nano particles embedded therein, the process comprising (a) mixing (i) light converter nano particles having an outer surface grafted with grafting ligands and (ii) curable siloxane polymers, and (b) curing the curable siloxane polymers, thereby producing the light converter; wherein the grafting ligands comprise siloxane grafting ligands having x1 Si backbone elements, wherein at least one Si backbone element of each siloxane grafting ligand comprises a side group having a grafting functionality; wherein the curable siloxane polymers have y1 Si backbone elements; and wherein x1 is at least 20, wherein y1 is at least 2, and wherein x1/y1?0.8.

Abstract: The invention provides a process for the production of a (particulate) luminescent material comprising particles, especially substantially spherical particles, having a porous inorganic material core with pores, especially macro pores, which are at least partly filled with a polymeric material with luminescent quantum dots embedded therein, wherein the process comprises (i) impregnating the particles of a particulate porous inorganic material with pores with a first liquid (“ink”) comprising the luminescent quantum dots and a curable or polymerizable precursor of the polymeric material, to provide pores that are at least partly filled with said luminescent quantum dots and curable or polymerizable precursor; and (ii) curing or polymerizing the curable or polymerizable precursor within pores of the porous material, as well as a product obtainable thereby.

Abstract: The invention provides a process for the production of a (particulate) luminescent material comprising particles, especially substantially spherical particles, having a porous inorganic material core with pores, especially macro pores, which are at least partly filled with a polymeric material with a first material embedded therein, wherein the process comprises (i) impregnating the particles of a particulate porous inorganic material with pores with a first liquid (“ink”) comprising the first material and a curable or polymerizable precursor of the polymeric material, to provide pores that are at least partly filled with said first material and curable or polymerizable precursor; and (ii) curing or polymerizing the curable or polymerizable precursor within pores of the porous material, as well as a product obtainable thereby.

Abstract: The invention provides a light emitting semiconductor device comprising a zinc magnesium oxide based layer as active layer, wherein the zinc magnesium oxide based layer comprises an aluminum doped zinc magnesium oxide layer having the nominal composition Zn1-xMgxO with 1-350 ppm Al, wherein x is in the range of 0<x?0.3. The invention further provides a method for the production of such aluminum doped zinc magnesium oxide, the method comprising heat treating a composition comprising Zn, Mg and Al with a predetermined composition at elevated temperatures, and subsequently annealing the heat treated composition to provide said aluminum doped zinc magnesium oxide.

Abstract: The invention provides a luminescent material comprising wavelength converter nanoparticles (120) with siloxane polymer capping ligands (130) associated to the wavelength converter nanoparticles (120), wherein the siloxane polymer capping ligands (130) comprise siloxane polymers which comprise at least one capping group comprising a terminal carboxylic acid group, wherein the capping group comprises in total at least six carbon atoms.

Abstract: The invention provides a method for the production of a luminescent material, (10) based on coated quantum dots (100), comprising: (i) providing luminescent quantum dots (100) in a liquid medium (20) wherein the luminescent quantum dots (100) have an outer layer (105) comprising first cations and first anions; and (ii) providing in a coating process a coating (120) on the outer layer (105) of the quantum dots (100) in the liquid medium (20), wherein the coating (120) comprises a silica coating; wherein during the coating process, or after the coating process, or during and after the coating process, the liquid medium (20) comprises one or more of a third element and a fourth element, wherein the first cation and the third element belong to the same group of the periodic system, and wherein the first anion and the fourth element belong to the same group of the periodic system.

Abstract: The invention provides a lighting device comprising (a) a light converter comprising a light receiving face; and (b) a solid state light source configured to generate a light source light with a photon flux of at least 10 W/cm2 at the light receiving face, wherein the light converter is configured to convert at least part of the light source light into light converter light having a first frequency, wherein the light converter comprises a semiconductor quantum dot in an optical structure selected from a photonic crystal structure and a plasmonic structure, wherein the optical structure is configured to increase the photon density of states in the light converter resonant with the first frequency for reducing saturation quenching, and wherein the quantum dot has a quantum efficiency of at least 80%.

Abstract: Method for producing a light emitting semiconductor device comprising a zinc magnesium oxide based layer as active layer, wherein the zinc magnesium oxide based layer comprises an aluminum doped zinc magnesium oxide layer having the nominal composition Zn1-xMgxO with 1-350 ppm Al, wherein x is in the range of 0<x?0.3. The invention further provides a method for the production of such aluminum doped zinc magnesium oxide, the method comprising heat treating a composition comprising Zn, Mg and Al with a predetermined composition at elevated temperatures, and subsequently annealing the heat treated composition to provide said aluminum doped zinc magnesium oxide.

Abstract: The present invention relates to a drive method for an electrophoretic cell and a device adapted to implement the method. The cell comprises a first storage electrode (24), a second storage electrode (22), a first target area electrode (28), a second target area electrode (30), a first type of particle (32) and a second type of particles (33), said second type of particles being of opposite polarity to the first type of particles. An area (31) extending between the target area electrodes (28, 30) is a target area. The method comprises a reset phase (110), wherein said first and second type of particle are reset to determined reset positions, a first write phase (120), wherein the first type of particles are moved to and/or from the storage electrodes and change in amount in said target area (31), a second write phase (140) similar to the first write phase but for the second type of particles, and a spread phase (150) so that the particles in said target area (31) distribute and mix.

Abstract: The invention provides a luminescent material (10) comprising quantum dots (100), wherein the luminescent material (10) further comprises a capping agent (110) coordinating to the quantum dots (10), wherein the capping agent comprises MxOy(OH)zn, wherein M is selected from the group consisting of B, Al, P, S, V, Zn, Ga, Ge, As, Se, Nb, Mo, Cd, In, Sn, Sb, Te, Ta and W, wherein x?1, y+z?1, and wherein n indicates a positive or negative charge of the capping agent.

Abstract: The invention provides a luminescent material (10) based on quantum dots (100), wherein the quantum dots (100) have inorganic capping agents (110), wherein the luminescent material (10) comprises particles (12) having an inorganic salt matrix (14) hosting the quantum dots (100) with inorganic capping agents (110), wherein the luminescent quantum dots (100) have an outer layer (105). The invention also provides a method for the production of such luminescent material (10). The new luminescent material can be used and processed as conventional particulate luminescent material.

Abstract: The invention provides a light emitting semiconductor device comprising a zinc magnesium oxide based layer as active layer, wherein the zinc magnesium oxide based layer comprises an aluminum doped zinc magnesium oxide layer having the nominal composition Zn1-xMgxO with 1-350 ppm Al, wherein x is in the range of 0<x?0.3. The invention further provides a method for the production of such aluminum doped zinc magnesium oxide, the method comprising heat treating a composition comprising Zn, Mg and Al with a predetermined composition at elevated temperatures, and subsequently annealing the heat treated composition to provide said aluminum doped zinc magnesium oxide.

Abstract: The invention provides a light emitting semi conductor device comprising a zinc magnesium oxide based layer as active layer, wherein the zinc magnesium oxide based layer comprises an aluminum doped zinc magnesium oxide layer having the nominal composition Zn-xMgxO with 1-350 ppm Al, wherein x is in the range of 0<x?0.3. The invention further provides a method for the production of such aluminum doped zinc magnesium oxide, the method comprising heat treating a composition comprising Zn, Mg and Al with a predetermined composition at elevated temperatures, and subsequently annealing the heat treated composition to provide said aluminum doped zinc magnesium oxide.