Abstract: The present disclosure relates generally to a planar sputtering target. In particular, the present disclosure provides a planar sputtering target comprising a planar sputtering surface and a back surface opposite the planar sputtering surface. The planar sputtering target is formed from a 2N purity tin having an average grain size from at least 10 mm to at most 100 mm. The present disclosure provides a method of manufacturing the tin planar sputtering target having an average grain size from at least 10 mm to at most 100 mm.

Abstract: Disclosed herein is a method of forming a high strength aluminum alloy. The method comprises heating an aluminum material to a solutionizing temperature for a solutionizing time such that the magnesium and zinc are dispersed throughout the extruded aluminum material to form a solutionized aluminum material. The method includes quenching the solutionized aluminum material to form a quenched aluminum material. The method also includes aging the quenched aluminum material to form an aluminum alloy, then subjecting the aluminum alloy to an ECAE process to form a high strength aluminum alloy.

Abstract: A method of forming a high strength aluminum alloy. The method comprises subjecting an aluminum material containing at least one of magnesium, manganese, silicon, copper, and zinc at a concentration of at least 0.1% by weight to an equal channel angular extrusion (ECAE) process. The method produces a high strength aluminum alloy having an average grain size from about 0.2 ?m to about 0.8 ?m and a yield strength from about 300 MPa to about 650 MPa.

Abstract: A sputter trap formed on at least a portion of a sputtering chamber component has a plurality of particles and a particle size distribution plot with at least two different distributions. A method of forming a sputter trap having a particle size distribution plot with at least two different distributions is also provided.

Abstract: Disclosed herein is a method of forming a high strength aluminum alloy. The method comprises heating an aluminum material to a solutionizing temperature for a solutionizing time such that the magnesium and zinc are dispersed throughout the extruded aluminum material to form a solutionized aluminum material. The method includes quenching the solutionized aluminum material to form a quenched aluminum material. The method also includes aging the quenched aluminum material to form an aluminum alloy, then subjecting the aluminum alloy to an ECAE process to form a high strength aluminum alloy.

Abstract: The present disclosure relates generally to a planar sputtering target. In particular, the present disclosure provides a planar sputtering target comprising a planar sputtering surface and a back surface opposite the planar sputtering surface. The planar sputtering target is formed from a 2N purity tin having an average grain size from at least 10 mm to at most 100 mm. The present disclosure provides a method of manufacturing the tin planar sputtering target having an average grain size from at least 10 mm to at most 100 mm.

Abstract: Disclosed herein is a method of forming a high strength aluminum alloy. The method comprises heating an aluminum material to a solutionizing temperature for a solutionizing time such that the magnesium and zinc are dispersed throughout the extruded aluminum material to form a solutionized aluminum material. The method includes quenching the solutionized aluminum material to form a quenched aluminum material. The method also includes aging the quenched aluminum material to form an aluminum alloy, then subjecting the aluminum alloy to an ECAE process to form a high strength aluminum alloy.

Abstract: A method of forming a high strength aluminum alloy. The method comprises subjecting an aluminum material containing at least one of magnesium, manganese, silicon, copper, and zinc at a concentration of at least 0.1% by weight to an equal channel angular extrusion (ECAE) process. The method produces a high strength aluminum alloy having an average grain size from about 0.2 ?m to about 0.8 ?m and a yield strength from about 300 MPa to about 650 MPa.

Abstract: A sputter trap formed on at least a portion of a sputtering chamber component has a plurality of particles and a particle size distribution plot with at least two different distributions. A method of forming a sputter trap having a particle size distribution plot with at least two different distributions is also provided.

Abstract: A sputter trap formed on at least a portion of a sputtering chamber component has a plurality of particles and a particle size distribution plot with at least two different distributions. A method of forming a sputter trap having a particle size distribution plot with at least two different distributions is also provided.

Abstract: A sputter trap formed on at least a portion of a sputtering chamber component has a plurality of particles and a particle size distribution plot with at least two different distributions. A method of forming a sputter trap having a particle size distribution plot with at least two different distributions is also provided.

Abstract: A method of forming a high strength aluminum alloy. The method comprises subjecting an aluminum material containing at least one of magnesium, manganese, silicon, copper, and zinc at a concentration of at least 0.1% by weight to an equal channel angular extrusion (ECAE) process. The method produces a high strength aluminum alloy having an average grain size from about 0.2 ?m to about 0.8 ?m and a yield strength from about 300 MPa to about 650 MPa.

Abstract: Disclosed herein is a method of forming a high strength aluminum alloy. The method comprises heating an aluminum material to a solutionizing temperature for a solutionizing time such that the magnesium and zinc are dispersed throughout the extruded aluminum material to form a solutionized aluminum material. The method includes quenching the solutionized aluminum material to form a quenched aluminum material. The method also includes aging the quenched aluminum material to form an aluminum alloy, then subjecting the aluminum alloy to an ECAE process to form a high strength aluminum alloy.

Abstract: A sputtering target assembly for use in a vapor deposition apparatus, the sputtering target assembly comprising a sputtering surface; a sidewall extending from the sputtering surface at an angle to the sputtering surface; a particle trap formed of a roughness located along the sidewall and extending radially from the sputtering surface, wherein the roughness of the particle trap has a macrostructure and a microstructure.

Abstract: Heat spreader assemblies are disclosed that include a heat spreader component, at least one coupling layer, and at least one thermally conductive layer, wherein the heat spreader component is coupled to the at least one thermally conductive layer through the at least one coupling layer. In some instances, heat spreader assemblies include an aluminum-based heat spreader component, at least one coupling layer, wherein the coupling layer comprises zinc, a zinc-based material, tin, a tin-based material or a combination thereof, and at least one thermally conductive layer comprising nickel, wherein the heat spreader component is coupled to the at least one thermally conductive layer through the at least one coupling layer.

Abstract: Near net shape heat spreader components are disclosed that comprise at least one pressure-treated powder material. Heat spreaders are also described that include at least one near net shape heat spreader component, and at least one additional part. Methods of forming heat spreaders are also described that include: a) forming a base portion comprising a pressure-treated powder material and having a first surface comprising a perimeter region surrounding a heat-receiving surface; b) forming a frame portion comprising a second material; and c) joining the base portion and the frame portion.