Abstract: A method for testing the generation of scattered light by photolithographic imaging devices is disclosed. In one embodiment, measuring structures that are to be imaged in a photoresist are provided in the vicinity of deliberately structured sections that cause scattered light in the imaging device to be tested, in a photomask. The scattered light which is caused as a function of the configuration of the sections acts on the measurement structures in the photoresist and leads to changes in their CD, which is measured in the photoresist, and allows conclusions to be drawn about the scattered-light behavior of the imaging device. The method is suitable for specifically testing the lens system of the imaging device.

Abstract: A method for transferring structures from a photomask into a photoresist layer is disclosed. In one embodiment, the method involves the patterning of a photoresist layer provided on a layer stack having a topology. In order to suppress standing waves in the photoresist layer and the resist swing effect, which causes variations in the feature sizes, a thin, conformal, organic antireflection layer is applied on the layer stack by means of a known CVD method. The photoresist layer can be patterned dimensionally accurately by means of the method. The method is particularly suitable for the patterning of photoresist layers which are provided for the implantation process of source/drain regions of transistors in semiconductor technology.

Abstract: A method is provided for cleaning a photo-mask by placing the photo-mask in an evacuated chamber for a certain period of time.