Abstract: Described herein is a networked smart device capable of transmitting water flow and quality data to a cloud database, in real-time. In some instances, the device is part of a broader ecosystem or platform comprised of one or more of the devices, associated software and data management. This type of platform enables data analysis of water intake and quality, for a variety of users. Physically, the device itself connects to a water outlet such as a sink faucet or refrigerator intake pipes, and is integrated/incorporated into a flow-through water disinfection reactor as well as a filtration mechanism. Additionally, flow sensors and antennas for wireless communications capability can be included to transmit the data. An accompanying software application and back-end database management allows device users to manage their data and track their water intake.

Abstract: The present disclosure relates to devices and methods for the disinfection of a flowing water sample using ultraviolet light.

Abstract: Methods and apparatus for generating terahertz radiation are disclosed herein. In addition, methods for forming orientation-patterned nonlinear semiconductor crystals are disclosed herein. For example, according to an example implementation, a method for generating terahertz radiation may include: providing an optical pulse having a wavelength less than approximately 1.0 ?m; and illuminating an orientation-patterned nonlinear semiconductor crystal with the optical pulse.

Abstract: Methods and apparatus for generating terahertz radiation are disclosed herein. In addition, methods for forming orientation-patterned nonlinear semiconductor crystals are disclosed herein. For example, according to an example implementation, a method for generating terahertz radiation may include: providing an optical pulse having a wavelength less than approximately 1.0 ?m; and illuminating an orientation-patterned nonlinear semiconductor crystal with the optical pulse.

Abstract: Methods and apparatus for generating terahertz radiation are disclosed herein. In addition, methods for forming orientation-patterned nonlinear semiconductor crystals are disclosed herein. For example, according to an example implementation, a method for generating terahertz radiation may include: providing an optical pulse having a wavelength less than approximately 1.0 ?m; and illuminating an orientation-patterned nonlinear semiconductor crystal with the optical pulse.

Abstract: Controlling a power state of a communications device includes: receiving over a network at a communications device in a low-power mode from a scheduling device an assignment of a power state schedule indicating one or more intervals to enter an active state period and one or more intervals to enter a sleep state period; and during an active state period at the communications device, receiving over the network from a second communications device aware of the power state schedule a request that the communications device exit the low-power mode.

Abstract: Methods and apparatus for generating terahertz radiation are disclosed herein. In addition, methods for forming orientation-patterned nonlinear semiconductor crystals are disclosed herein. For example, according to an example implementation, a method for generating terahertz radiation may include: providing an optical pulse having a wavelength less than approximately 1.0 ?m; and illuminating an orientation-patterned nonlinear semiconductor crystal with the optical pulse.

Abstract: Controlling a power state of a communications device includes: receiving over a network at a communications device in a low-power mode from a scheduling device an assignment of a power state schedule indicating one or more intervals to enter an active state period and one or more intervals to enter a sleep state period; and during an active state period at the communications device, receiving over the network from a second communications device aware of the power state schedule a request that the communications device exit the low-power mode.

Abstract: The subject invention involves a method of preparing defect-free semiconductor material layers by growing a semiconductor material buffer layer on a substrate, masking with a dielectric film, and etching to open spaced seed windows. Another layer of a III-V or II-VI material is then grown in the longitudinal direction from the seed window, followed by lateral growth of the same material to form an epitaxial film and a structure which provides a defect free surface for further epitaxial layers.