Publication number: 20150326182
Abstract: A power amplifier module includes a power amplifier including a GaAs bipolar transistor having a collector, a base abutting the collector, and an emitter, the collector having a doping concentration of at least about 3×1016 cm?3 at a junction with the base, the collector also having at least a first grading in which doping concentration increases away from the base; and an RF transmission line driven by the power amplifier, the RF transmission line including a conductive layer and finish plating on the conductive layer, the finish plating including a gold layer, a palladium layer proximate the gold layer, and a diffusion barrier layer proximate the palladium layer, the diffusion barrier layer including nickel and having a thickness that is less than about the skin depth of nickel at 0.9 GHz. Other embodiments of the module are provided along with related methods and components thereof.
Type:
Application
Filed:
April 14, 2015
Publication date:
November 12, 2015
Inventors:
Howard E. Chen, Yifan Guo, Dinhphuoc Vu Hoang, Mehran Janani, Tin Myint Ko, Philip John Lehtola, Anthony James LoBianco, Hardik Bhupendra Modi, Hoang Mong Nguyen, Matthew Thomas Ozalas, Sandra Louise Petty-Weeks, Matthew Sean Read, Jens Albrecht Riege, David Steven Ripley, Hongxiao Shao, Hong Shen, Weimin Sun, Hsiang-Chih Sun, Patrick Lawrence Welch, Peter J. Zampardi, JR., Guohao Zhang
Publication number: 20150326181
Abstract: A power amplifier module includes a power amplifier including a GaAs bipolar transistor having a collector, a base abutting the collector, and an emitter, the collector having a doping concentration of at least about 3×1016 cm?3 at a junction with the base, the collector also having at least a first grading in which doping concentration increases away from the base; and an RF transmission line driven by the power amplifier, the RF transmission line including a conductive layer and finish plating on the conductive layer, the finish plating including a gold layer, a palladium layer proximate the gold layer, and a diffusion barrier layer proximate the palladium layer, the diffusion barrier layer including nickel and having a thickness that is less than about the skin depth of nickel at 0.9 GHz. Other embodiments of the module are provided along with related methods and components thereof.
Type:
Application
Filed:
April 14, 2015
Publication date:
November 12, 2015
Inventors:
Howard E. Chen, Yifan Guo, Dinhphuoc Vu Hoang, Mehran Janani, Tin Myint Ko, Philip John Lehtola, Anthony James LoBianco, Hardik Bhupendra Modi, Hoang Mong Nguyen, Matthew Thomas Ozalas, Sandra Louise Petty-Weeks, Matthew Sean Read, Jens Albrecht Riege, David Steven Ripley, Hongxiao Shao, Hong Shen, Weimin Sun, Hsiang-Chih Sun, Patrick Lawrence Welch, Peter J. Zampardi, JR., Guohao Zhang
Patent number: 9041472
Abstract: A power amplifier module includes a power amplifier including a GaAs bipolar transistor having a collector, a base abutting the collector, and an emitter, the collector having a doping concentration of at least about 3×1016 cm?3 at a junction with the base, the collector also having at least a first grading in which doping concentration increases away from the base; and an RF transmission line driven by the power amplifier, the RF transmission line including a conductive layer and finish plating on the conductive layer, the finish plating including a gold layer, a palladium layer proximate the gold layer, and a diffusion barrier layer proximate the palladium layer, the diffusion barrier layer including nickel and having a thickness that is less than about the skin depth of nickel at 0.9 GHz. Other embodiments of the module are provided along with related methods and components thereof.
Type:
Grant
Filed:
June 13, 2013
Date of Patent:
May 26, 2015
Assignee:
Skyworks Solutions, Inc.
Inventors:
Howard E. Chen, Yifan Guo, Dinhphuoc Vu Hoang, Mehran Janani, Tin Myint Ko, Philip John Lehtola, Anthony James LoBianco, Hardik Bhupendra Modi, Hoang Mong Nguyen, Matthew Thomas Ozalas, Sandra Louise Petty-Weeks, Matthew Sean Read, Jens Albrecht Riege, David Steven Ripley, Hongxiao Shao, Hong Shen, Weimin Sun, Hsiang-Chih Sun, Patrick Lawrence Welch, Peter J. Zampardi, Jr., Guohao Zhang
Publication number: 20140002188
Abstract: A power amplifier module includes a power amplifier including a GaAs bipolar transistor having a collector, a base abutting the collector, and an emitter, the collector having a doping concentration of at least about 3×1016 cm?3 at a junction with the base, the collector also having at least a first grading in which doping concentration increases away from the base; and an RF transmission line driven by the power amplifier, the RF transmission line including a conductive layer and finish plating on the conductive layer, the finish plating including a gold layer, a palladium layer proximate the gold layer, and a diffusion barrier layer proximate the palladium layer, the diffusion barrier layer including nickel and having a thickness that is less than about the skin depth of nickel at 0.9 GHz. Other embodiments of the module are provided along with related methods and components thereof.
Type:
Application
Filed:
June 13, 2013
Publication date:
January 2, 2014
Applicant:
SKYWORKS SOLUTIONS, INC.
Inventors:
Howard E. Chen, Yifan Guo, Dinhphuoc Vu Hoang, Mehran Janani, Tin Myint Ko, Philip John Lehtola, Anthony James LoBianco, Hardik Bhupendra Modi, Hoang Mong Nguyen, Matthew Thomas Ozalas, Sandra Louise Petty-Weeks, Matthew Sean Read, Jens Albrecht Riege, David Steven Ripley, Hongxiao Shao, Hong Shen, Weimin Sun, Hsiang-Chih Sun, Patrick Lawrence Welch, Peter J. Zampardi, JR., Guohao Zhang