Abstract: Disclosed is a substrate processing system which enables combined static and pass-by processing. Also, a system architecture is provided, which reduces footprint size. The system is constructed such that the substrates are processed therein vertically, and each chamber has a processing source attached to one sidewall thereof, wherein the other sidewall backs to a complementary processing chamber. The chamber system can be milled from a single block of metal, e.g., aluminum, wherein the block is milled from both sides, such that a wall remains and separates each two complementary processing chambers.

Abstract: Disclosed is a substrate processing system which enables combined static and pass-by processing. Also, a system architecture is provided, which reduces footprint size. The system is constructed such that the substrates are processed therein vertically, and each chamber has a processing source attached to one sidewall thereof, wherein the other sidewall backs to a complementary processing chamber. The chamber system can be milled from a single block of metal, e.g., aluminum, wherein the block is milled from both sides, such that a wall remains and separates each two complementary processing chambers.

Abstract: Disclosed is a substrate processing system which enables combined static and pass-by processing. Also, a system architecture is provided, which reduces footprint size. The system is constructed such that the substrates are processed therein vertically, and each chamber has a processing source attached to one sidewall thereof, wherein the other sidewall backs to a complementary processing chamber. The chamber system can be milled from a single block of metal, e.g., aluminum, wherein the block is milled from both sides, such that a wall remains and separates each two complementary processing chambers.

Abstract: An enclosure for generating a secondary environment within a processing chamber for coating a substrate. An enclosure wall forms a secondary environment encompassing the coating source, plasma, and the substrate, and separating them from interior of the processing chamber. The enclosure wall includes a plurality of pumping channels for diverting gaseous flow away from the substrate. The channels have an intake of larger diameter from the exhaust opening and are oriented at an angle with the intake opening pointing away from the deposition source. A movable seal enables transport of the substrate in open position and processing the substrate in closed position. The seal may be formed as a labyrinth seal to avoid particle generation from a standard contact seal.

Abstract: A bonded multi-layer RF window may include an external layer of dielectric material having desired thermal properties, an internal layer of dielectric material exposed to plasma inside a reaction chamber, and an intermediate layer of bonding material between the external layer and the internal layer. Heat produced by the chemical reaction inside the chamber and by the transmission of RF energy through the window may be conducted from the internal layer to the external layer, which may be cooled during a semiconductor wafer manufacturing process. A bonded multi-layer RF window may include cooling conduits for circulating coolant to facilitate cooling of the internal layer; additionally or alternatively, gas distribution conduits and gas injection apertures may be included for delivering one or more process gases into a reaction chamber. A system including a plasma reaction chamber may employ the inventive bonded multi-layer RF window.

Abstract: A method and apparatus for use in conjunction with a plasma reaction chamber provide both throttling functionality and independent vacuum isolation for a turbomolecular pump. A throttle valve provides for precise reaction chamber pressure regulation, and a gate valve prevents extended exposure of the turbomolecular pump to atmospheric conditions during cleaning or other maintenance operations. The throttle valve and the gate valve may be actuated independently.

Abstract: A method and an apparatus that provides efficient heating of a dielectric structure without compromising the dielectric properties of the structure. A heating assembly is adapted to fit a circularly shaped dielectric lid of a plasma processing vacuum chamber. The heating assembly is placed between the RF coil and the atmospheric side of the dielectric lid. Although the active heating structure portion (a resistive heating wire or a thermal working fluid or both, per alternate embodiments) of the heating assembly is transparent to the electromagnetic fields produced by the coil, the conductive portion of the heating assembly takes on the role of shaping the electric field. The result of this averaging is the minimization of detrimental effects of electromagnetic potentials that are too high (e.g., sputtering of the dielectric by the plasma) and of electromagnetic potentials that are too low (e.g., heavy by-product depositions on the dielectric lid).

Abstract: A closed-loop, dome thermal control apparatus containing a high-volume fan, a heat exchange chamber, and an enclosure that encloses the fan and the heat exchange chamber. The fan blows air over a dome of a semiconductor wafer processing system and through the heat exchange chamber to uniformly control the temperature of a dome of a plasma chamber to prevent particle contamination of the wafer. The enclosure recirculates the temperature controlled air to the fan to form a closed-loop apparatus.