Abstract: Production of a device for connecting a nano-object to an external electrical system (SEE) including: a first chip provided with conducting areas (8a, 8b) and a first nano-object (50) connected to the conducting areas, the first chip being assembled on a support (70) such that the first nano-object is arranged facing an upper face of the support, the device being further provided with first connection elements (80a, 80b) capable of being connected to the external electrical system and arranged on and in contact with the first conducting areas (8a, 8b), the first connection elements being formed on the side of the upper face of the support (70) and being accessible from the side of the upper face of the support.

Abstract: A method for producing a bolometric detector comprising producing a stack, on an interconnect level of a read-out circuit, comprising a sacrificial layer positioned between a carrier layer and an etch stop layer, the sacrificial layer comprising a mineral material; producing a conducting via passing through the stack such that it is in contact with a conducting portion of said interconnect level; depositing a conducting layer onto the carrier layer and the via; etching the conducting layer and the carrier layer, forming a bolometer membrane electrically connected to the via by a remaining portion of the conducting layer that covers an upper part of the via; and elimination of the sacrificial layer by selective chemical etching, and such that the membrane is suspended by the via.

Abstract: A method for manufacturing a device (1) for detecting electromagnetic radiation. The method comprises the steps of: supplying a first substrate (400) comprising a reading circuit (340), at least two first contact plugs (343, 344) and at least one first annular bonding element (345) surrounding the first contact plugs (343, 344); supplying a second substrate comprising a cap (210), an annular side wall forming with the cap (210) a cavity filled with a sacrificial material and a detection structure (100) housed in the cavity. The method further comprising the steps of bonding the second substrate (200) on the first substrate (400); arranging at least one opening (212) in the second substrate (200); selective elimination of the sacrificial material; and closing the opening (212) under at least a primary vacuum.

Abstract: A method for direct bonding an electronic chip onto a substrate or another electronic chip, the method including: carrying out a hydrophilic treatment of a portion of, a surface of the electronic chip and of a portion of a surface of the substrate or of the other electronic chip; depositing an aqueous fluid on the portion of the surface of the substrate or of the second electronic chip; depositing the portion of the surface of the electronic chip on the aqueous fluid; drying the aqueous fluid until the portion of the surface of the electronic chip is rigidly connected to the portion of the surface of the substrate or of the other electronic chip: and during at least part of the drying of the aqueous fluid, emitting ultrasound into the aqueous fluid through the substrate or the other electronic chip.

Abstract: A method for manufacturing a device (1) for detecting electromagnetic radiation. The method comprises the steps of: supplying a first substrate (400) comprising a reading circuit (340), at least two first contact plugs (343, 344) and at least one first annular bonding element (345) surrounding the first contact plugs (343, 344); supplying a second substrate comprising a cap (210), an annular side wall forming with the cap (210) a cavity filled with a sacrificial material and a detection structure (100) housed in the cavity. The method further comprising the steps of bonding the second substrate (200) on the first substrate (400); arranging at least one opening (212) in the second substrate (200); selective elimination of the sacrificial material; and closing the opening (212) under at least a primary vacuum.

Abstract: An electromagnetic radiation detector comprising: at least one membrane suspended above a substrate; and a cap, closing a hermetic cavity including the at least one membrane. According to the invention: the thickness of the cap is less than or equal to 10 ?m; the cap bears at least on support walls surrounding the membrane(s); and the detector has first and second metallic sealing layers intercalated on each other between the cap and the support walls, and between which a peripheral bonding zone extends. The invention also relates to a method of making such a detector. The invention provides an encapsulation solution using a thin cap, in which the membranes are not subjected to high temperatures.

Abstract: A method for producing a bolometric detector comprising: producing a stack, on an interconnect level of a read-out circuit, comprising a sacrificial layer positioned between a carrier layer and an etch stop layer, the sacrificial layer comprising a mineral material; producing a conducting via passing through the stack such that it is in contact with a conducting portion of said interconnect level; depositing a conducting layer onto the carrier layer and the via; etching the conducting layer and the carrier layer, forming a bolometer membrane electrically connected to the via by a remaining portion of the conducting layer that covers an upper part of the via; elimination of the sacrificial layer by selective chemical etching, and such that the membrane is suspended by the via.

Abstract: An electromagnetic radiation detector comprising: at least one membrane suspended above a substrate; and a cap, closing a hermetic cavity including the at least one membrane. According to the invention: the thickness of the cap is less than or equal to 10 ?m; the cap bears at least on support walls surrounding the membrane(s); and the detector has first and second metallic sealing layers intercalated on each other between the cap and the support walls, and between which a peripheral bonding zone extends. The invention also relates to a method of making such a detector. The invention provides an encapsulation solution using a thin cap, in which the membranes are not subjected to high temperatures.

Abstract: A method for direct bonding an electronic chip onto a substrate or another electronic chip, the method including: carrying out a hydrophilic treatment of a portion of, a surface of the electronic chip and of a portion of a surface of the substrate or of the other electronic chip; depositing an aqueous fluid on the portion of the surface of the substrate or of the second electronic chip; depositing the portion of the surface of the electronic chip on the aqueous fluid; drying the aqueous fluid until the portion of the surface of the electronic chip is rigidly connected to the portion of the surface of the substrate or of the other electronic chip: and during at least part of the drying of the aqueous fluid, emitting ultrasound into the aqueous fluid through the substrate or the other electronic chip.

Abstract: Receiving structure for electrically connecting a nano-object on a surface thereof and re-establish electrical contact with the nano-object on the opposite surface, and methods for manufacturing the structure. The invention, that can be used for molecular characterisation, makes use of a support (44) to connect a nano-object (50) onto its top face and continue the electrical contact on its bottom face. At least two interconnects (52, 54) pass through the support. The two faces of the support comprise contact continuity zones (56, 58, 60, 62) for the interconnects. According to the invention, at least the zones (56, 58) in the top face are doped zones each having a pattern adapted to the fan out of the interconnect associated with it, on this face.

Abstract: Production of a device for connecting a nano-object to an external electrical system (SEE) including: a first chip provided with conducting areas (8a, 8b) and a first nano-object (50) connected to the conducting areas, the first chip being assembled on a support (70) such that the first nano-object is arranged facing an upper face of the support, the device being further provided with first connection elements (80a, 80b) capable of being connected to the external electrical system and arranged on and in contact with the first conducting areas (8a, 8b), the first connection elements being formed on the side of the upper face of the support (70) and being accessible from the side of the upper face of the support.

Abstract: Receiving structure for electrically connecting a nano-object on a surface thereof and re-establish electrical contact with the nano-object on the opposite surface, and methods for manufacturing the structure. The invention, that can be used for molecular characterisation, makes use of a support (44) to connect a nano-object (50) onto its top face and continue the electrical contact on its bottom face. At least two interconnects (52, 54) pass through the support. The two faces of the support comprise contact continuity zones (56, 58, 60, 62) for the interconnects. According to the invention, at least the zones (56, 58) in the top face are doped zones each having a pattern adapted to the fan out of the interconnect associated with it, on this face.

Abstract: A method for direct bonding between a first element and a second element, including at least the following steps: deposition of at least one first porous layer on at least one face of the first element, where the first porous layer is compressible, production of at least one bonding layer on the first porous layer, rigid connection by direct bonding of the second element with the first bonding layer.

Abstract: An electronic device includes a heat source, a heat-absorbing cold point, a thermally insulating material for insulating the heat source from the cold point with a conductivity at a use-temperature of electronic device, that is below a thermal-conductivity threshold, and a thermal bridge having first and second ends connected by pads to the heat source and the cold point, and a thermal switch. The thermal bridge extends between the two ends and switches reversibly between conductive and non-conductive states. It includes material of variable thermal conductivity capable of switching over, in response to an addition of energy, between a conductive phase and a resistive phase, and a control module for causing the thermal switch to switch between the conductive state and the resistive state.

Abstract: A method for direct bonding between a first element and a second element, including at least the following steps: deposition of at least one first porous layer on at least one face of the first element, where the first porous layer is compressible, production of at least one bonding layer on the first porous layer, rigid connection by direct bonding of the second element with the first bonding layer.

Abstract: A method for making a stack of at least two stages of circuits, each stage including a substrate and at least one component and metallic connections formed in or on this substrate, the assembly of a stage to be transferred onto a previous stage including: a) ionic implantation in the substrate of the stage to be transferred through at least part of the components, so as to form a weakened zone, b) formation of metallic connections of the components, c) transfer and assembly of some of this substrate onto the previous stage, and d) a step to thin the transferred part of the substrate by fracture along the weakened zone.

Abstract: The invention relates to a method for making a stack of at least two stages of circuits, each stage comprising a substrate and at least one component (10, 20) and metallic connections formed in or on this substrate, the assembly of a stage to be transferred onto a previous stage comprising: a) ionic implantation (29) in the substrate (2, 25) of the stage to be transferred through at least part of the components (10, 20), so as to form a weakened zone (30), b) formation of metallic connections of said components, c) transfer and assembly of some of this substrate onto the previous stage, d) a step to thin the transferred part of said substrate by fracture along the weakened zone (30).