Abstract: A method and Phase Frequency Detector (PFD) circuit for implementing low phase locked loop (PLL) phase noise and low phase error, and a design structure on which the subject circuit resides are provided. The PFD circuit includes a PFD latch receiving clock and reset signals, and PFD output driver circuit providing PFD output signals. The PFD latch is set by the clock and reset by the reset signal. An AND gate coupled to the PFD latch and the PFD output driver circuit includes differential inputs and outputs and applies the reset signal to the PFD latch. The PFD latch, AND gate and PFD output driver circuit are formed by current mode logic using bipolar transistors. An active loop filter generates a tuning voltage output.

Abstract: A complementary metal oxide semiconductor (CMOS) voltage regulator for low headroom applications includes a differential input common mode range amplifier. The differential input common mode range amplifier is formed by a plurality of CMOS transistors. A source follower CMOS transistor is coupled to an output of the differential input common mode range amplifier for providing an output of the CMOS voltage regulator. A current source is coupled to the differential input common mode range amplifier for maintaining a bias current through the differential input common mode range amplifier.

Abstract: A method and a reference circuit for bias current switching are provided for implementing an integrated temperature sensor. A first bias current is generated and constantly applied to a thermal sensing diode. A second bias current is provided to the thermal sensing diode by selectively switching a multiplied current from a current multiplier to the thermal sensing diode or to a load diode. The reference circuit includes a reference current source coupled to current mirror. The current mirror provides a first bias current to a thermal sensing diode. The current mirror is coupled to a current multiplier that provides a multiplied current. A second bias current to the thermal sensing diode includes the first bias current and the multiplied current from the current multiplier. The second bias current to the thermal sensing diode is provided by selectively switching the multiplied current between the thermal sensing diode and a dummy load diode.

Abstract: A method and a low voltage, complementary metal oxide semiconductor (CMOS) circuit are provided for generating voltage and current references with a low voltage power supply. A voltage generating circuit provides a voltage reference and is formed by a plurality of CMOS transistors and a resistor. An operational amplifier includes a differential pair of CMOS transistors. The first voltage reference is applied to an input of the differential pair of transistors and an output of the differential pair of transistors providing a second voltage reference. The operational amplifier includes a plurality of current reference transistors. A first voltage generating circuit generates a first voltage and a second voltage generating circuit generating a second voltage. The first and second voltage generating circuits are formed by a plurality of CMOS transistors. The generated first and second voltages are applied to the voltage reference generating circuit and current reference transistors.

Abstract: A method and a low voltage, complementary metal oxide semiconductor (CMOS) circuit are provided for generating voltage and current references with a low voltage power supply. A voltage generating circuit provides a voltage reference and is formed by a plurality of CMOS transistors and a resistor. An operational amplifier includes a differential pair of CMOS transistors. The first voltage reference is applied to an input of the differential pair of transistors and an output of the differential pair of transistors providing a second voltage reference. The operational amplifier includes a plurality of current reference transistors. A first voltage generating circuit generates a first voltage and a second voltage generating circuit generating a second voltage. The first and second voltage generating circuits are formed by a plurality of CMOS transistors. The generated first and second voltages are applied to the voltage reference generating circuit and current reference transistors.

Abstract: A receiver is provided with delay generally insensitive to input amplitude and slew rate. The receiver includes a first differential transistor pair having a common emitter connection. A differential input is applied to a respective base of the differential transistor pair. A pair of load transistors is connected to the respective collector of the differential transistor pair. A respective resistance is coupled to a base of the load transistors for providing a delay independent of the differential input; and a pair of bias transistors is coupled to the respective collector of the differential transistor pair for biasing the load transistors.

Abstract: Circuitry is disclosed for detection of open inputs on an enhanced differential receiver. A pulldown terminator is coupled to the inputs of the enhanced differential receiver. If the differential inputs are not actively driven, the voltage on both differential inputs will be pulled to a predetermined voltage. When the voltage on the differential inputs reach a reference voltage, an active device detects that the reference voltage has been reached, and produces a predetermined logic value on an output of the enhanced differential receiver. The enhanced differential receiver is not subject to oscillation when not actively driven. Delay through the enhanced differential receiver is not substantially greater than delay through a conventional differential receiver consisting of only a differential amplifier.

Abstract: A method and apparatus are provided for implementing a body contact in a silicon-on-insulator field effect transistor device. A SOI field effect transistor is provided having a body contact having a predefined resistance that provides a higher device threshold voltage in the SOI FET device. A body of the SOI field effect transistor is connected to the gate of the SOI field effect transistor. The body gate connection of the SOI field effect transistor effectively lowers the device threshold voltage due to body bias effect. The SOI field effect transistor with a body connected to the gate of the SOI field effect transistor is used in circuits having stacked devices and DC currents. The SOI field effect transistor with a body connected to the gate of the SOI field effect transistor also is used in analog circuits with device matching requirements and in circuits having a low voltage power supply.

Abstract: A method of adjusting the operating or timing margin of a clocked system, such as a digital computer or a memory controller, is disclosed. The method may be automated to occur upon every initial program load or can be manually adjusted for changes in frequency, operating voltages, or applications in which the timing margin is not so critical. An initial or default frequency of the clock is set. Clock control settings, such as duty cycle, VCO range and gain, etc, are also initialized and set as some default. Test, such as ABIST, LBIST or other functional tests, are performed on the clocked system and the clock frequency is incrementally increased until the tests fail. Upon failure of the tests, one or more clock control settings are adjusted and the tests are run again at the failing frequency. If the tests successfully complete, indicating no errors, the clock frequency is incremented again until the test fail.

Abstract: A method and apparatus are provided for implementing a body contact in a silicon-on-insulator field effect transistor device. A SOI field effect transistor is provided having a body contact having a predefined resistance that provides a higher device threshold voltage in the SOI FET device. A body of the SOI field effect transistor is connected to the gate of the SOI field effect transistor. The body gate connection of the SOI field effect transistor effectively lowers the device threshold voltage due to body bias effect. The SOI field effect transistor with a body connected to the gate of the SOI field effect transistor is used in circuits having stacked devices and DC currents. The SOI field effect transistor with a body connected to the gate of the SOI field effect transistor also is used in analog circuits with device matching requirements and in circuits having a low voltage power supply.