Abstract: Semiconducting devices, and more specifically back end of line (BEOL) portions for semiconducting devices that may include dielectric materials incorporating deuterium are disclosed. The semiconducting devices may include a back end of line (BEOL) portion electrically coupled to a front end of line (FEOL) portion. The BEOL portion may include at least one BEOL level having a dielectric layer. The dielectric layer may include at least one section formed from a low-k material including deuterium (D). The BEOL level(s) may also include an etch stop layer disposed over the dielectric layer, and at least one conductive structure disposed within the dielectric layer. The at least one conductive structure may extend through the dielectric layer and the etch stop layer, respectively.

Abstract: A method of controlling the mixing of outside air and return air, entering an air handling unit, through inlets having dampers, the air handling unit having a coil for conditioning the incoming air and a fan for blowing the conditioned air into a conditioned space, the method including measuring the outside air temperature, and return air temperature, and a minimum coil temperature corresponding to a damper position calculating a correlation values from the outside air, return air, and a minimum temperatures determining a correlation function from the correlation value and damper positions, and using the correlation function to calculate the maximum damper position for an acceptable coil temperature.