Abstract: An atmospheric plasma treatment station is integrated in a semiconductor process tool. The atmospheric plasma treatment station directly interfaces with a deposition chamber of the semiconductor process tool without adding to the footprint or form factor of the semiconductor process tool. The atmospheric plasma treatment station includes a movable atmospheric plasma source such as a linear head for scanning across a surface of a substrate. The atmospheric plasma treatment station provides an enclosed space in a controlled environment with non-reactive gas flowing through the enclosed space. Process gases may be supplied to the linear head based on a surface condition of the substrate being treated.

Abstract: Systems, apparatuses, methods, and computer program products for embedded whiteboard retrospectives are provided. Examples of embedded whiteboard retrospectives are provided via user-accessed applications to one or more uses that may not have permissions to directly access embedded functionalities.

Abstract: An atmospheric plasma treatment station is integrated in a semiconductor process tool. The atmospheric plasma treatment station directly interfaces with a deposition chamber of the semiconductor process tool without adding to the footprint or form factor of the semiconductor process tool. The atmospheric plasma treatment station includes a movable atmospheric plasma source such as a linear head for scanning across a surface of a substrate. The atmospheric plasma treatment station provides an enclosed space in a controlled environment with non-reactive gas flowing through the enclosed space. Process gases may be supplied to the linear head based on a surface condition of the substrate being treated.

Abstract: A solution for providing electroless deposition of a metal layer on a substrate is provided. A solvent is provided. A metal precursor is provided to the solvent. A first borane containing reducing agent is provided to the solvent. A second borane containing reducing agent is provided to the solvent, wherein the first borane containing reducing agent has a deposition rate of at least five times a deposition rate of the second borane containing reducing agent, and wherein the solution is free of nonborane reducing agents.

Abstract: A solution for providing electroless deposition of a metal layer on a substrate is provided. A solvent is provided. A metal precursor is provided to the solvent. A first borane containing reducing agent is provided to the solvent. A second borane containing reducing agent is provided to the solvent, wherein the first borane containing reducing agent has a deposition rate of at least five times a deposition rate of the second borane containing reducing agent, and wherein the solution is free of nonborane reducing agents.

Abstract: A key fob cover system for inhibiting a key fob from being inadvertently manipulated includes a key fob. A plurality of buttons is provided and each of the buttons is coupled to the key fob. Thus, each of the buttons may be manipulated. A cover is slidably positioned on the key fob. The cover covers the buttons when the cover is positioned on the key fob such that the cover inhibits the buttons from being inadvertently manipulated.

Abstract: A solution for providing electroless deposition of a metal layer on a substrate is provided. A solvent is provided. A metal precursor is provided to the solvent. A first borane containing reducing agent is provided to the solvent. A second borane containing reducing agent is provided to the solvent, wherein the first borane containing reducing agent has a deposition rate of at least five times a deposition rate of the second borane containing reducing agent, and wherein the solution is free of nonborane reducing agents.

Abstract: A solution for providing electroless deposition of a metal layer on a substrate is provided. A solvent is provided. A metal precursor is provided to the solvent. A first borane containing reducing agent is provided to the solvent. A second borane containing reducing agent is provided to the solvent, wherein the first borane containing reducing agent has a deposition rate of at least five times a deposition rate of the second borane containing reducing agent, and wherein the solution is free of nonborane reducing agents.

Abstract: A solar cell includes a first electrode located over a substrate, at least one first conductivity type semiconductor layer located over the first electrode, at least one second conductivity type semiconductor layer located over the first conductivity semiconductor layer, and a transparent conductive oxide contact layer located over the second conductivity semiconductor layer. The first surface of the transparent conductive oxide contact layer may be located closer to the second conductivity type semiconductor layer than the second surface of the transparent conductive oxide contact layer, and the transparent conductive oxide contact layer may have an oxygen concentration that decreases continuously or in at least two discrete steps as a function of thickness for at least a first portion of the contact layer thickness in a direction from the first surface to the second surface.

Abstract: Methods and pharmaceutical compositions for the treatment of pain, preferably with lowered risk of induction of seizure in a patient.

Abstract: Methods and pharmaceutical compositions for the treatment of pain, preferably with lowered risk of induction of seizure in a patient.