Abstract: Critical dimension values can be obtained from wafer structures at predefined measurement sites. Coefficients of a preset model and another model with a different term are determined using critical dimension values from the measurement sites. The models approximate the critical dimension values, the process parameters and/or correction values of the process parameters as a function of at least two position coordinates. An updated model is selected from the models based on a criterion weighting the residuals between approximated critical dimension values, the number of terms of the model and/or the order or the terms of the model.

Abstract: Critical dimension values can be obtained from wafer structures at predefined measurement sites. Coefficients of a preset model and another model with a different term are determined using critical dimension values from the measurement sites. The models approximate the critical dimension values, the process parameters and/or correction values of the process parameters as a function of at least two position coordinates. An updated model is selected from the models based on a criterion weighting the residuals between approximated critical dimension values, the number of terms of the model and/or the order or the terms of the model.

Abstract: Methods and apparatus of manufacturing a semiconductor device are provided. Embodiments regard producing a first pattern in a first layer of a semiconductor substrate, producing a second pattern in a second layer of the semiconductor substrate, and matching the first pattern and the second pattern. The matching includes determining a mismatch between the first pattern and the second pattern that would occur without the matching and precorrecting the mismatch in the first layer.

Abstract: An inspection system includes an illumination source configured to illuminate a blazed phase grating sample, image collection pathways and an imaging system configured to capture an image of a sample point of the blazed phase grating sample, and a controller configured to adjust the illumination source in response to an analysis of the image of the sample point to determine illumination uniformity of the inspection system.

Abstract: An inspection system includes an illumination source configured to illuminate a blazed phase grating sample, image collection pathways and an imaging system configured to capture an image of a sample point of the blazed phase grating sample, and a controller configured to adjust the illumination source in response to an analysis of the image of the sample point to determine illumination uniformity of the inspection system.

Abstract: An exposure tool includes an illumination source, a blazed phase grating reticle, a reticle stage holding the blazed phase grating reticle, a lens system including at least one adjustable lens element, a wafer stage holding a sample, and a controller. The controller is configured to control the illumination source and the position of the blazed phase grating reticle and the lens system relative to the wafer stage to expose the sample to generate a blazed phase grating sample. The controller is configured to adjust the at least one adjustable lens element to compensate for aberrations of the lens system based on feedback generated from analyzing images of the blazed phase grating sample.

Abstract: An exposure tool includes an illumination source, a blazed phase grating reticle, a lens system, a focus sensor configured for maintaining a focus of the lens system, a stage holding a sample, and a controller. The controller is configured to control the illumination source and a position of the blazed phase grating reticle and the lens system relative to the stage to expose the sample according to a product shot map to generate a blazed phase grating sample. The controller is configured to adjust a focus offset of the exposure tool by product shot to improve focal plane fitting based on feedback generated from an analysis of images of the blazed phase grating sample.

Abstract: A system for analyzing images of a blazed phase grating sample includes an interface configured to receive images of sample points of a blazed phase grating sample obtained by an inspection system, a memory for storing the images, and a processor. Each image is named according to a sequential naming protocol that associates each image to a location on the blazed phase grating sample. The processor is configured to load the images from the memory, convert image data for each sample point to intensity values by pixel, determine a best focus by azimuth for each sample point based on the intensity values, and calculate parameters from the blazed phase grating sample based on the best focus by azimuth for each sample point.