Patents by Inventor Patrick Martin McGuiness

Patrick Martin McGuiness has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Methods of forming a bipolar transistor
    Patent number: 8263469
    Abstract: A bipolar transistor, comprising a collector, a base and an emitter, in which the collector comprises a relatively heavily doped region, and a relatively lightly doped region adjacent the base, and in which the relatively heavily doped region is substantially omitted from an intrinsic region of the transistor.
    Type: Grant
    Filed: October 6, 2011
    Date of Patent: September 11, 2012
    Assignee: Analog Devices, Inc.
    Inventors: Bernard Patrick Stenson, Andrew David Bain, Derek Frederick Bowers, Paul Malachy Daly, Anne Maria Deignan, Michael Thomas Dunbar, Patrick Martin McGuiness, William Allan Lane
  • JUNCTION FIELD EFFECT TRANSISTOR WITH REGION OF REDUCED DOPING
    Publication number: 20120217551
    Abstract: A junction field effect transistor having a drain and a source, each defined by regions of a first type of semiconductor interconnected by a channel, and in which a dopant profile at a side of the drain facing the channel is modified so as to provide a region of reduced doping compared to a body region of the drain. The region of reduced doping and the body region can be defined by the same mask and doping step, but the mask is shaped to provide a lesser amount and thus less depth of doping for the region of reduced doping.
    Type: Application
    Filed: May 10, 2012
    Publication date: August 30, 2012
    Applicant: Analog Devices, Inc.
    Inventors: Paul Malachy Daly, Andrew David Bain, Derek Frederick Bowers, Anne Maria Deignan, Michael Thomas Dunbar, Patrick Martin McGuiness, Bernard Patrick Stenson, William Allan Lane
  • Bipolar transistor
    Patent number: 8120136
    Abstract: A bipolar transistor comprising an emitter region, a base region and a collector region, and a guard region spaced from and surrounding the base. The guard region can be formed in the same steps that form the base, and can serve to spread out the depletion layer in operation.
    Type: Grant
    Filed: November 2, 2009
    Date of Patent: February 21, 2012
    Assignee: Analog Devices, Inc.
    Inventors: William Allan Lane, Andrew David Bain, Derek Frederick Bowers, Paul Malachy Daly, Anne Maria Deignan, Michael Thomas Dunbar, Patrick Martin McGuiness, Bernard Patrick Stenson
  • METHODS OF FORMING A BIPOLAR TRANSISTOR
    Publication number: 20120028432
    Abstract: A bipolar transistor, comprising a collector, a base and an emitter, in which the collector comprises a relatively heavily doped region, and a relatively lightly doped region adjacent the base, and in which the relatively heavily doped region is substantially omitted from an intrinsic region of the transistor.
    Type: Application
    Filed: October 6, 2011
    Publication date: February 2, 2012
    Applicant: Analog Devices, Inc.
    Inventors: Bernard Patrick Stenson, Andrew David Bain, Derek Frederick Bowers, Paul Malachy Daly, Anne Maria Deignan, Michael Thomas Dunbar, Patrick Martin McGuiness, William Allan Lane
  • Bipolar transistor
    Patent number: 8058704
    Abstract: A bipolar transistor, comprising a collector, a base and an emitter, in which the collector comprises a relatively heavily doped region, and a relatively lightly doped region adjacent the base, and in which the relatively heavily doped region is substantially omitted from an intrinsic region of the transistor.
    Type: Grant
    Filed: November 2, 2009
    Date of Patent: November 15, 2011
    Assignee: Analog Devices, Inc.
    Inventors: Bernard Patrick Stenson, Andrew David Bain, Derek Frederick Bowers, Paul Malachy Daly, Anne Maria Deignan, Michael Thomas Dunbar, Patrick Martin McGuiness, William Allan Lane
  • BIPOLAR TRANSISTOR
    Publication number: 20110101486
    Abstract: A bipolar transistor comprising an emitter region, a base region and a collector region, and a guard region spaced from and surrounding the base. The guard region can be formed in the same steps that form the base, and can serve to spread out the depletion layer in operation.
    Type: Application
    Filed: November 2, 2009
    Publication date: May 5, 2011
    Applicant: Analog Devices, Inc.
    Inventors: William Allan Lane, Andrew David Bain, Derek Frederick Bowers, Paul Malachy Daly, Anne Maria Deignan, Michael Thomas Dunbar, Patrick Martin McGuiness, Bernard Patrick Stenson
  • JUNCTION FIELD EFFECT TRANSISTOR
    Publication number: 20110101500
    Abstract: A bipolar transistor, comprising a collector, a base and an emitter, in which the collector comprises a relatively heavily doped region, and a relatively lightly doped region adjacent the base, and in which the relatively heavily doped region is substantially omitted from an intrinsic region of the transistor.
    Type: Application
    Filed: November 2, 2009
    Publication date: May 5, 2011
    Applicant: Analog Devices, Inc.
    Inventors: Bernard Patrick Stenson, Andrew David Bain, Derek Frederick Bowers, Paul Malachy Daly, Anne Maria Deignan, Michael Thomas Dunbar, Patrick Martin McGuiness, William Allan Lane