Patents by Inventor Patrick Maxwell
Patrick Maxwell has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9878993Abstract: The present invention relates to compounds useful as inhibitors of DNA-PK. The invention also provides pharmaceutically acceptable compositions comprising said compounds and methods of using the compositions in the treatment of various disease, conditions, or disorders.Type: GrantFiled: May 19, 2016Date of Patent: January 30, 2018Assignee: Vertex Pharmaceuticals IncorporatedInventors: Paul S. Charifson, Kevin Michael Cottrell, Hongbo Deng, John P. Duffy, Huai Gao, Simon Giroux, Jeremy Green, Katrina Lee Jackson, Joseph M. Kennedy, David J. Lauffer, Mark Willem Ledeboer, Pan Li, John Patrick Maxwell, Mark A. Morris, Albert Charles Pierce, Nathan D. Waal, Jinwang Xu
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Publication number: 20170258789Abstract: The present invention relates to compounds useful as inhibitors of DNA-PK. The invention also provides pharmaceutically acceptable compositions comprising said compounds and methods of using the compositions in the treatment of various disease, conditions, or disorders.Type: ApplicationFiled: February 7, 2017Publication date: September 14, 2017Applicant: Vertex Pharmaceuticals IncorporatedInventors: Paul S. Charifson, Kevin Michael Cottrell, Hongbo Deng, John P. Duffy, Huai Gao, Simon Giroux, Jeremy Green, Katrina Lee Jackson, Joseph M. Kennedy, David J. Lauffer, Mark Willem Ledeboer, Pan Li, John Patrick Maxwell, Mark A. Morris, Albert Charles Pierce, Nathan D. Waal, Jinwang Xu
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Patent number: 9685608Abstract: Providing for two-terminal memory that mitigates diffusion of external material therein is described herein. In some embodiments, a two-terminal memory cell can comprise an electrode layer. The electrode layer can be at least in part permeable to ionically or chemically reactive material, such as oxygen or the like. The two-terminal memory can further comprise a diffusion mitigation material disposed between the electrode layer and external material. This diffusion mitigation material can be selected to mitigate or prevent diffusion of the undesired element(s) or compound(s), to mitigate or avoid exposure of such element(s) or compound(s) to the electrode layer. Accordingly, degradation of the two-terminal memory as a result of contact with the undesired element(s) or compound(s) can be mitigated by various disclosed embodiments.Type: GrantFiled: March 12, 2014Date of Patent: June 20, 2017Assignee: CROSSBAR, INC.Inventors: Steven Patrick Maxwell, Sung Hyun Jo
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Patent number: 9601690Abstract: Provision of fabrication, construction, and/or assembly of a two-terminal memory device is described herein. The two-terminal memory device can include an active region with a silicon bearing layer, an interface layer, and an active metal layer. The interface layer can created comprising a non-stoichiometric sub-oxide that can be a combination of multiple silicon and/or silicon oxide layers with an aggregate chemical formula of SiOX, where X can be a non-integer greater than zero and less than 2. The sub-oxide can be created in a variety of ways, including various techniques related to growing the sub-oxide, depositing the sub-oxide, or transforming an extant film into the sub-oxide.Type: GrantFiled: October 19, 2015Date of Patent: March 21, 2017Assignee: CROSSBAR, INC.Inventors: Harry Yue Gee, Mark Harold Clark, Steven Patrick Maxwell, Sung Hyun Jo, Natividad Vasquez, Jr.
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Patent number: 9592232Abstract: The present invention relates to compounds useful as inhibitors of DNA-PK. The invention also provides pharmaceutically acceptable compositions comprising said compounds and methods of using the compositions in the treatment of various disease, conditions, or disorders.Type: GrantFiled: October 16, 2014Date of Patent: March 14, 2017Assignee: Vertex Pharmaceuticals IncorporatedInventors: Paul S. Charifson, Kevin Michael Cottrell, Hongbo Deng, John P. Duffy, Huai Gao, Simon Giroux, Jeremy Green, Katrina Lee Jackson, Joseph M. Kennedy, David J. Lauffer, Mark Willem Ledeboer, Pan Li, John Patrick Maxwell, Mark A. Morris, Albert Charles Pierce, Nathan D. Waal, Jinwang Xu
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Patent number: 9595670Abstract: A method includes patterning a layered structure comprising a monolithic stack including a bottom electrode surrounded by a dielectric material, a switching material, a barrier material, a dielectric hardmask, and a patterned photoresist formed above and adjacent to a portion of the dielectric hardmask. The patterning includes patterning the dielectric hardmask using a first etchant and employing the patterned photoresist as a mask, patterning the barrier material using a second etchant and employing a portion of the dielectric hardmask remaining after the patterning the dielectric hardmask as a mask, and patterning the switching material using ion milling or etching and employing the portion of the dielectric hardmask remaining after the patterning the barrier material as a mask.Type: GrantFiled: July 21, 2014Date of Patent: March 14, 2017Assignee: CROSSBAR, INC.Inventors: Harry Yue Gee, Steven Patrick Maxwell, Natividad Vasquez, Jr., Sundar Narayanan
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Patent number: 9583701Abstract: A memory device comprising a doped conductive polycrystalline layer having an electrically resistive portion, is described herein. By way of example, ion implantation to a subset of the conductive polycrystalline layer can degrade and modify the polycrystalline layer, forming the electrically resistive portion. The electrically resistive portion can include resistive switching properties facilitating digital information storage. Parametric control of the ion implantation can facilitate control over corresponding resistive switching properties of the resistive portion. For example, a projected range or depth of the ion implantation can be controlled, allowing for preferential placement of atoms in the resistive portion, and fine-tuning of a forming voltage of the memory device. As another example, dose and number of atoms implanted, type of atoms or ions that are implanted, the conductive polycrystalline material used, and so forth, can facilitate control over switching characteristics of the memory device.Type: GrantFiled: March 14, 2014Date of Patent: February 28, 2017Assignee: CROSSBAR, INC.Inventors: Harry Yue Gee, Steven Patrick Maxwell, Natividad Vasquez, Jr., Mark Harold Clark
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Publication number: 20160368899Abstract: The present invention relates to compounds useful as inhibitors of DNA-PK. The invention also provides pharmaceutically acceptable compositions comprising said compounds and methods of using the compositions in the treatment of various disease, conditions, or disorders.Type: ApplicationFiled: May 19, 2016Publication date: December 22, 2016Applicant: Vertex Pharmaceuticals IncorporatedInventors: Paul S. Charifson, Kevin Michael Cottrell, Hongbo Deng, John P. Duffy, Huai Gao, Simon Giroux, Jeremy Green, Katrina Lee Jackson, Joseph M. Kennedy, David J. Lauffer, Mark Willem Ledeboer, Pan Li, John Patrick Maxwell, Mark A. Morris, Albert Charles Pierce, Nathan D. Waal, Jinwang Xu
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Publication number: 20160354381Abstract: The present invention relates to compounds useful as inhibitors of DNA-PK. The invention also provides pharmaceutically acceptable compositions comprising said compounds and methods of using the compositions in the treatment of various disease, conditions, or disorders.Type: ApplicationFiled: May 6, 2016Publication date: December 8, 2016Applicant: Vertex Pharmaceuticals IncorporatedInventors: John Patrick Maxwell, Paul S. Charifson, Qing Tang, Steven M. Ronkin, Katrina Lee Jackson, Albert Charles Pierce, David J. Lauffer, Pan Li, Simon Giroux, Jinwang Xu, Kevin Michael Cottrell, Mark A. Morris, Nathan D. Waal, John J. Court, Wenxin Gu, Hongbo Deng
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Publication number: 20160351625Abstract: A recessed high voltage metal oxide semiconductor (MOS) transistor is provided for use in a two-terminal memory cell. The two-terminal memory cell can include a resistive switching device connected to the recessed MOS transistor. The recessed MOS transistor provides for an increased channel length relative to the transistor size in comparison to a traditional MOS transistor. This allows for a decreased memory cell size while maintaining comparable electrical parameters (threshold voltage, channel length, and leakage) than would otherwise be possible. The recessed MOS transistor can be made as either a NMOS or PMOS device using n-type or p-type materials respectively, where the channel, or inversion layer, is formed by electrons (NMOS) or holes (PMOS) between the source and drain in the transistor.Type: ApplicationFiled: May 29, 2015Publication date: December 1, 2016Inventors: Harry Yue Gee, Tanmay Kumar, Natividad Vasquez, JR., Steven Patrick Maxwell, Sundar Narayanan
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Publication number: 20160340341Abstract: The present invention relates to compounds useful as inhibitors of DNA-PK. The invention also provides pharmaceutically acceptable compositions comprising said compounds and methods of using the compositions in the treatment of various disease, conditions, or disorders.Type: ApplicationFiled: April 20, 2016Publication date: November 24, 2016Applicant: Vertex Pharmaceuticals IncorporatedInventors: John Patrick Maxwell, Paul S. Charifson, Qing Tang, Steve M. Ronkin, Katrina Lee Jackson, Albert Charles Pierce, David J. Lauffer, Pan Li, Simon Giroux, Jinwang Xu, Kevin Michael Cottrell, Mark A. Morris, Nathan D. Waal, John J. Court, Wenxin Gu, Hongbo Deng
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Patent number: 9437814Abstract: During fabrication of a two-terminal memory device, a terminal (e.g., bottom terminal) can be formed. After formation of the terminal, a chemical mechanical planarization (CMP) process can be applied that, depending on the composition of the terminal, can cause damage that affect operating characteristics of the finished memory device or cell. In some embodiments, such damage can be removed by one or more post-CMP processes. In some embodiments, such damage can be mitigated so as to prevent the damage from occurring at all, by, e.g., forming a sacrificial layer atop the terminal prior to performing the CMP process. Thus, the sacrificial layer can operate to protect the terminal from damage resulting from the CMP process, with the remainder of the sacrificial layer being removed prior to completing the fabrication of the two-terminal memory device.Type: GrantFiled: August 29, 2014Date of Patent: September 6, 2016Assignee: Crossbar, Inc.Inventors: Harry Yue Gee, Majid Milani, Natividad Vasquez, Jr., Steven Patrick Maxwell, Sundar Narayanan
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Publication number: 20160250212Abstract: The present invention relates to compounds useful as inhibitors of DNA-PK. The invention also provides pharmaceutically acceptable compositions comprising said compounds and methods of using the compositions in the treatment of various disease, conditions, or disorders.Type: ApplicationFiled: February 29, 2016Publication date: September 1, 2016Applicant: Vertex Pharmaceuticals IncorporatedInventors: Paul S. Charifson, Kevin Michael Cottrell, Hongbo Deng, John P. Duffy, Huai Gao, Simon Giroux, Jeremy Green, Katrina Lee Jackson, Joseph M. Kennedy, David J. Lauffer, Mark Willem Ledeboer, Pan Li, John Patrick Maxwell, Mark A. Morris, Albert Charles Pierce, Nathan D. Waal, Jinwang Xu
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Patent number: 9425046Abstract: Techniques for processing silicon germanium (SiGe) thin films to reduce surface roughness thereof are provided herein. In an aspect, a method is disclosed that includes depositing a silicon germanium (SiGe) material upon a surface of a substrate at or below about 450 degrees Celsius, the substrate having a plurality of CMOS devices therein and forming, from the deposited SiGe material, a SiGe material film, wherein the SiGe material film has a jagged surface comprising projections and indentations extended along a direction substantially perpendicular to the surface of the substrate. The method further includes performing a chemical mechanical planarization (CMP) process to the jagged surface of the SiGe material, and reducing variations between the projections and the indentions along the direction substantially perpendicular to the surface of the substrate, and transforming the jagged surface of the SiGe material into a relatively smooth surface, compared to the jagged surface.Type: GrantFiled: July 18, 2014Date of Patent: August 23, 2016Assignee: Crossbar, Inc.Inventors: Harry Yue Gee, Steven Patrick Maxwell, Natividad Vasquez, Jr., Sundar Narayanan
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Patent number: 9401475Abstract: A method of depositing a silver layer includes forming a plurality of openings in a dielectric layer to expose a top surface of a structure comprising a resistive memory layer on top of a p-doped silicon-containing layer on top of a conductive structure, depositing a first metal layer comprising a tungsten layer overlying the top surface of the structure, wherein a first metal material of the first metal layer contacts a resistive memory material of the resistive memory layer and exposing the first metal layer in a bath comprising a solution of silver species having an alkaline pH for a predetermined time to form a silver metal layer from the silver species from the solution overlying the resistive memory material, wherein the silver species is reduced by the first metal material, and wherein the first metal material is solubilized while forming the silver metal layer.Type: GrantFiled: November 18, 2014Date of Patent: July 26, 2016Assignee: Crossbar, Inc.Inventors: Steven Patrick Maxwell, Sung-Hyun Jo, Scott Brad Herner
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Patent number: 9376448Abstract: The present invention relates to compounds useful as inhibitors of DNA-PK. The invention also provides pharmaceutically acceptable compositions comprising said compounds and methods of using the compositions in the treatment of various disease, conditions, or disorders.Type: GrantFiled: October 17, 2013Date of Patent: June 28, 2016Assignee: Vertex Pharmaceuticals IncorporatedInventors: Paul S. Charifson, Kevin Michael Cottrell, Hongbo Deng, John P. Duffy, Huai Gao, Simon Giroux, Jeremy Green, Katrina Lee Jackson, Joseph M. Kennedy, David J. Lauffer, Mark Willem Ledeboer, Pan Li, John Patrick Maxwell, Mark A. Morris, Albert Charles Pierce, Nathan D. Waal, Jinwang Xu
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Patent number: 9359380Abstract: The present invention relates to compounds useful as inhibitors of DNA-PK. The invention also provides pharmaceutically acceptable compositions comprising said compounds and methods of using the compositions in the treatment of various disease, conditions, or disorders.Type: GrantFiled: March 12, 2014Date of Patent: June 7, 2016Assignee: Vertex Pharmaceuticals IncorporatedInventors: John Patrick Maxwell, Paul S. Charifson, Qing Tang, Steven M. Ronkin, Katrina Lee Jackson, Albert Charles Pierce, David J. Lauffer, Pan Li, Simon Giroux, Jinwang Xu, Kevin M. Cottrell, Mark A. Morris, Nathan D. Waal, John J. Court, Wenxin Gu, Hongbo Deng
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Patent number: 9340557Abstract: The compounds represented by Formula (I) and pharmaceutically acceptable salts thereof are useful as inhibitors of DNA-PK: where each of R1, R2, X, Ring A, Ring B and Ring C is as described herein. Pharmaceutically acceptable compositions comprise said compounds. These compounds and pharmaceutical compositions are used in the treatment of various disease, conditions, or disorders.Type: GrantFiled: March 12, 2014Date of Patent: May 17, 2016Assignee: Vertex Pharmaceuticals IncorporatedInventors: John Patrick Maxwell, Paul S. Charifson, Qing Tang, Steven M. Ronkin, Katrina Lee Jackson, Albert Charles Pierce, David J. Lauffer, Pan Li, Simon Giroux, Jinwang Xu, Kevin M. Cottrell, Mark A. Morris, Nathan D. Waal, John J. Court, Wenxin Gu, Hongbo Deng
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Patent number: 9312483Abstract: A method of forming a resistive switching device includes forming a wiring structure over a first dielectric and substrate, forming a junction layer over the wiring structure, forming a resistive switching layer over the junction layer, forming an active metal over the resistive switching layer, forming a tungsten layer over the active metal, forming a barrier layer over the tungsten, depositing a mask over the barrier layer, etching the barrier layer to form a hard mask, etching the junction layer, the resistive switching layer, the active metal layer, and the adhesion layer using the hard mask to form a stack of material, while the adhesion layer maintains adhesion between the barrier layer and the active metal and while side walls of the stack of material have reduced contaminants and have reduced gap regions between the barrier layer and the resistive switching layer.Type: GrantFiled: September 24, 2012Date of Patent: April 12, 2016Assignee: CROSSBAR, INC.Inventor: Steven Patrick Maxwell
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Patent number: 9296701Abstract: The present invention relates to compounds useful as inhibitors of DNA-PK. The invention also provides pharmaceutically acceptable compositions comprising said compounds and methods of using the compositions in the treatment of various disease, conditions, or disorders.Type: GrantFiled: April 23, 2013Date of Patent: March 29, 2016Assignee: Vertex Pharmaceuticals IncorporatedInventors: Paul S Charifson, Kevin Michael Cottrell, Hongbo Deng, John P. Duffy, Huai Gao, Simon Giroux, Jeremy Green, Katrina Lee Jackson, Joseph M Kennedy, David J. Lauffer, Mark Willem Ledeboer, Pan Li, John Patrick Maxwell, Mark A. Morris, Albert Charles Pierce, Nathan D. Waal, Jinwang Xu