Abstract: A spin-torque oscillator (STO) has a single free ferromagnetic layer that forms part of both a giant magnetoresistance (GMR) structure with a nonmagnetic conductive spacer layer and a tunneling magnetoresistance (TMR) structure with a tunnel barrier layer. The STO has three electrical terminals that connect to electrical circuitry that provides a spin-torque excitation current through the conductive spacer layer and a lesser sense current through the tunnel barrier layer. When the STO is used as a magnetic field sensor, the excitation current causes the magnetization of the free layer to oscillate at a fixed base frequency in the absence of an external magnetic field. A detector coupled to the sense current detects shifts in the free layer magnetization oscillation frequency from the base frequency in response to external magnetic fields.

Abstract: A spin-torque oscillator (STO) has a single free ferromagnetic layer that forms part of both a giant magnetoresistance (GMR) structure with a nonmagnetic conductive spacer layer and a tunneling magnetoresistance (TMR) structure with a tunnel barrier layer. The STO has three electrical terminals that connect to electrical circuitry that provides a spin-torque excitation current through the conductive spacer layer and a lesser sense current through the tunnel barrier layer. When the STO is used as a magnetic field sensor, the excitation current causes the magnetization of the free layer to oscillate at a fixed base frequency in the absence of an external magnetic field. A detector coupled to the sense current detects shifts in the free layer magnetization oscillation frequency from the base frequency in response to external magnetic fields.

Abstract: A spin torque oscillation magnetoresistive sensor for measuring a magnetic field. The sensor uses a change in precessional oscillation frequency of a magnetization of a magnetic layer to determine the magnitude of a magnetic field. The sensor can include a magnetic free layer, a magnetic pinned layer and a non-magnetic layer sandwiched therebetween. Circuitry is connected with these layers to induce an electrical current through the layers. Spin polarization of electrons traveling through the device causes a spin torque induced precession of the magnetization of one or more of the layers. The frequency of this oscillation modulates in response to a magnetic field. The modulation of the oscillation frequency can be measured to detect the presence of the magnetic field, and determine its magnitude.

Abstract: A spin torque oscillation magnetoresistive sensor for measuring a magnetic field. The sensor uses a change in precessional oscillation frequency of a magnetization of a magnetic layer to determine the magnitude of a magnetic field. The sensor can include a magnetic free layer, a magnetic pinned layer and a non-magnetic layer sandwiched therebetween. Circuitry is connected with these layers to induce an electrical current through the layers. Spin polarization of electrons traveling through the device causes a spin torque induced precession of the magnetization of one or more of the layers. The frequency of this oscillation modulates in response to a magnetic field. The modulation of the oscillation frequency can be measured to detect the presence of the magnetic field, and determine its magnitude.