Abstract: The invention relates to a high yield multistage light-to-electricity multiplying platform unit which is provided on its front face with a protection antireflection coating or layer (1) and with an upper electrode layer (5) characterized in that it comprises: an opto-phonic platform composed of a UV radiation light-to-light down converter (2) to a particular sub-band in the visible radiation domain, a harvesting diffractive grading component (3) including an electronic passivation layer (4) and with light splitting means and one or more sub-band light into narrowed sub-band light concentration converter(s), a IR radiation up conversion dedicated light converter, a converting multiplying platform made of several optimal for each narrowed and concentrated sub-band light-to-electricity multiplying converters.

Abstract: The solar photovoltaic photoconverter unit (1) comprises a light processing opto-photonic platform (2) realized by at least one transparent substrate (8) is having on, at least one, of its faces a digital diffractive grating constituted by slanted ribs (11) that are modulated to harvest a maximum of solar light at any angle of incidence to split it into several spectral sub-bands, to guide and to concentrate individually every one of these spectral sub-band, toward a separate output of the opto-photonic platform (2) for allowing its exploitation by a light-to-electricity conversion unit (3) that will have by optimization a grate overall conversion efficiency. The opto-photonic platform (2) also includes photonic converters (13) and (14) converting ultraviolet light into visible light and also infrared light in visible light for a better exploitation of the energy present in the solar light and so increasing the light to electricity conversion.

Abstract: This invention concerns a grouped nanostructured unit system forming a metamaterial within the silicon and the manufacturing process to arrange them therein in an optimal manner. The nanostructured units are grouped and conditioned in an optimal arrangement inside the silicon material. The process comprises the modification of the elementary crystal unit together with the stress field, the electric field and a heavy impurity doping in order to form a superlattice of nanostructured units grouped in an optimal arrangement so as to improve the efficiency of the light-to-electricity conversion by means of efficient use of the kinetic energy of hot electrons and efficient collection of all electrons generated within the converter.

Abstract: Architecture of the light-to-electricity converter characterized in that the system of amorphized nanograins, preferentially nanograins of amorphized silicon, of any shape are optimally spread within the crystalline host material, preferentially crystalline silicon that are wrapped around with a metamaterial seg-matter nanolayer, characterized by secondary generation centers, called segtons, that are conditioned around divacancies and disposed entirely or only partly within the volume of the emitter, this volume being limited at each end by a nanomembrane assuming the appropriate exploitation of the lower-energy secondary generation through the giant photoconversion involving hot electrons, segtons, and seg-matter.

Abstract: The invention bears on elementary nanoscale units nanostructured-formed inside a silicon material and the manufacturing process to implement them. Each elementary nanoscale unit is created by means of a limited displacement of two Si atoms outside a crystal elementary unit. A localized nanoscale transformation of the crystalline matter gets an unusual functionality by focusing in it a specific physical effect as is a highly useful additional set of electron energy levels that is optimized for the solar spectrum conversion to electricity. An adjusted energy set allows a low-energy secondary electron generation in a semiconductor, preferentially silicon, material for use especially in very-high efficiency all-silicon light-to-electricity converters. The manufacturing process to create such transformations in a semiconductor material bases on a local energy deposition like ion implantation or electron (?,X) beam irradiation and suitable thermal treatment and is industrially easily available.

Abstract: The present invention concerns methods for producing photovoltaic material and a device able to exploit high energy photons. The photovoltaic material is obtained from a conventional photovoltaic material having a top surface intended to be exposed to photonic radiation, having a built-in P-N junction delimiting an emitter part and a base part and comprising at least one area or region specifically designed, treated or adapted to absorb high energy or energetic photons, located adjacent or near at least one hetero-interface. According to the invention, this material is subjected to treatments resulting in the formation of at least one semiconductor based metamaterial field or region being created, as a transitional region of the or a hetero-interface, in an area located continuous or proximate to the or an absorption area or region for the energetic photons of the photonic radiation impacting said photovoltaic material.

Abstract: Methods for producing photovoltaic material and a device able to exploit high energy photons. The photovoltaic material is obtained from a conventional photovoltaic material having a top surface intended to be exposed to photonic radiation, having a built-in P-N junction delimiting an emitter part and a base part and including at least one area or region specifically designed, treated or adapted to absorb high energy or energetic photons, located adjacent or near at least one hetero-interface. This material is subjected to treatments resulting in the formation of at least one semiconductor based metamaterial field or region being created, as a transitional region of the or a hetero-interface, in an area located continuous or proximate to the or an absorption area or region for the energetic photons of the photonic radiation impacting the photovoltaic material.

Abstract: This invention aims to reduce and preferably to cancel the carrier collection limit effect in order to considerably increase the conversion efficiency. This improvement is achieved by a suitable modification of the amorphized layer thickness or even by discontinuities separating amorphizing beams or amorphized nanopellets.

Abstract: This invention concerns a grouped nanostructured unit system forming a metamaterial within the silicon and the manufacturing process to arrange them therein in an optimal manner. The nanostructured units are grouped and conditioned in an optimal arrangement inside the silicon material. The process comprises the modification of the elementary crystal unit together with the stress field, the electric field and a heavy impurity doping in order to form a superlattice of nanostructured units grouped in an optimal arrangement so as to improve the efficiency of the light-to-electricity conversion by means of efficient use of the kinetic energy of hot electrons and efficient collection of all electrons generated within the converter.

Abstract: This invention aims to reduce and preferably to cancel the carrier collection limit effect in order to considerably encrease the conversion efficiency. This improvement is achieved by a suitable modification of the amorphized layer thickness or even by discontinuities separating amorphizing beams or amorphized nanopellets.

Abstract: The present invention concerns methods for producing photovoltaic material and a device able to exploit high energy photons. The photovoltaic material is obtained from a conventional photovoltaic material having a top surface intended to be exposed to photonic radiation, having a built-in P-N junction delimiting an emitter part and a base part and comprising at least one area or region specifically designed, treated or adapted to absorb high energy or energetic photons, located adjacent or near at least one hetero-interface. According to the invention, this material is subjected to treatments resulting in the formation of at least one semiconductor based metamaterial field or region being created, as a transitional region of the or a hetero-interface, in an area located continuous or proximate to the or an absorption area or region for the energetic photons of the photonic radiation impacting said photovoltaic material.

Abstract: A method for determining the position of one of two components in relative motion with respect to each other, using optical means, comprises: directing at least one light beam emitted by a light source attached to one component towards a diffractive support attached to the second component, calculated and manufactured for generating an optical signal indicative of the positioning of said support, the optical signal being produced by the diffractive support in transmission and/or in reflection; detecting and reading at least one optical code formed by said signal, which corresponds to a unique position of the diffractive support relatively to the beam; and assigning a position to each detected optical code.

Abstract: The present invention comprises an apparatus and method for recording information on a multi-layer diffractive optics memory to extend storage capacity. A composite mirror device comprises a plurality of sets of mirror elements. Each one of the mirror elements of the sets is configured to direct a reference beam to a point of the multi-layer memory at one of a plurality of angles. A plurality of planes is associated with the plurality of sets. There is one plane per set, each plane being defined for each of the sets of mirror elements so that the paths formed from the mirror elements of the set to the point lie in the plane. Each of the planes is separated from its neighbor by an angle selected to avoid crosstalk.

Abstract: A petabyte diffractive storage system stores information on a diffractive storage tape. A light component generates a large reference beam to cover the plurality of points of the diffractive storage tape so as to simultaneously interfere with the plurality of object beams creating a plurality of packets of information at the plurality of points. Also disclosed is a terabyte diffractive storage that system reads information from a diffractice storage disk having a plurality of tracks. A plurality of micro-mirrors directs the read beam to one of said plurality of tracks.

Abstract: A master memory device that stores a plurality of pages of information. An unexposed memory device (190) is adjacent to the master memory device (180). The unexposed memory device and the master memory device are separated by a gap. An aperture unit (130) is disposed in the gap. The aperture has a plurality of aperture openings. Each opening corresponds, in size, to an individual page constitutes of a column with specific multiplexing angles of memory in the master memory device. The aperture unit is located across a face of the master memory device such that the openings correspond to selected ones of the pages of information. A light source (120) generates a beam that transfers memory data from the master memory device to the unexposed memory device.

Abstract: The present invention comprises method for making a multi-layer diffractive optics memory to extend storage capacity. A first layer is made by laying down a thin layer of polypeptide on a substrate. The substrate may be a glass substrate or plastic film substrate. One or more interference patterns are recorded on the first layer. For protection, a thin layer of optical glue is laid on the first layer. A second layer is made by laying down a thin layer of polypeptide onto the first and protective layers. One or more interference patterns are recorded on the second layer.

Abstract: The apparatus and method of the present invention employ solid state dynamic diffractive optical elements for reading information from a diffractive optics memory. The diffractive optics memory has stored therein information located at a plurality of points of the memory and at a plurality of angles at each one of the points so as to form a plurality of packets of information at each of the points. A matrix of the dynamic diffractive optical elements is configured to shape a laser beam to address the memory at one of the angles of one of the points to reconstruct one of the packets of information.

Abstract: A first holographic data storage device has a first set of holograms stored thereon. A second holographic data storage device has a second set of holograms stored thereon. An opaque layer is disposed between and attached to one side of the first and the second holographic data storage devices. In the case of double reflective diffractive recording, the opaque layer is not necessary.

Abstract: A parallel recording of diffractive storage system is provided. The recorded information is cellular for its designation. A laser beam is data modulated through a single reference beam and a plurality of object beams positioned at different angles. These object beams intersect the reference beam within a recording medium to form a plurality of data loaded pattern simultaneously.

Abstract: A method for determining the position of one of two components in relative motion with respect to each other, using optical means, comprises: directing at least one light beam emitted by a light source attached to one component towards a diffractive support attached to the second component, calculated and manufactured for generating an optical signal indicative of the positioning of said support, the optical signal being produced by the diffractive support in transmission and/or in reflection; detecting and reading at least one optical code formed by said signal, which corresponds to a unique position of the diffractive support relatively to the beam; and assigning a position to each detected optical code.