Abstract: The subject matter hereof relates to a calibratable phase-locked loop. The calibratable phase-looked loop in an example embodiment comprises a charge pump and calibration means for the loop, wherein calibration means comprises: first means for rendering unstable a stable phase-locked loop so that a sinusoidal signal is provided; second means for generating a squared signal from the so-provided sinusoidal signal; and a logic circuit for determining the frequency of the squared signal and for controlling the charge pump in correcting the frequency of the squared signal as a function of a desired frequency.

Abstract: The present invention relates to an integrated circuit comprising a phase-locked loop (PLL), a charge pump (CP) and calibration means (CAL) for the loop. The invention is characterized in that the calibration means (CAL) comprise:—first means (S1, SHORT for rendering the phase-locked loop (PLL) unstable so that it produces a sinusoidal signal (Vfilt);—second means (COMP) for generating a squared signal (Vs) from the sinusoidal signal (Vfilt);—a logic circuit (LOGIC) for:—determining the frequency of the squared signal (Vs);—comparing said frequency with a desired frequency; and—controlling the charge pump (CP) for correcting the frequency of the squared signal as a function of the desired frequency.

Abstract: The present invention provides an apparatus for setting the free-running frequency of a VCO to a reference frequency. The apparatus comprises frequency range means for setting the VCO within a VCO frequency range among a plurality of VCO frequency ranges. First counting means are operable to count to a first value at the VCO frequency rate and to provide a first ending signal when the first value is reached. Second counting means are operable to count to a second value at the reference frequency rate and to provide a second ending signal when the second value is reached. The second counting means are also operable to provide a reference count value when the first value is reached by the first counting means. A state machine is responsive to the first and second counting means for selecting a VCO frequency range among the plurality of VCO frequency ranges such that the VCO free-running frequency obtained through the selected range gives the closest value to the reference frequency.

Abstract: A temperature compensated resistance current generator. The generator provides temperature compensated reference current in a digital CMOS environment where resistors with positive temperature coefficients are not available, and where temperature coefficients are large. The current generator has two current sources and a subtraction circuit which subtracts the current from one current source from the current from the other current source to create a primary current. A proportionality circuit multiplies the primary current by a constant to produce the generator output.

Abstract: A bi-directional current source which maintains accurate, substantially equal source and sink currents over a large range of output voltages. The current source includes a primary field effect transistor (FET) and two mirroring FET's. It additionally includes at least one operational amplifier for voltage balancing. An optional operational amplifier provides and additional bias voltage and transistor matching optionally provides impedance matching of the supply voltages.

Abstract: Disclosed is a delay interpolator (DI) circuit (or mixer) that can be driven by digital signals. This DI circuit may be incorporated in the loop of a delay interpolator voltage controlled oscillator (DIVCO) circuit. In turn, the digital DIVCO circuit may be inserted in the loop of a phase-locked loop (PLL) circuit for total digitalization thereof. The novel digital delay interpolator circuit (23) has the base structure of the conventional analog delay interpolator circuit except in that, at the first (bottom) level, the two standard NFET input devices which are normally controlled by an analog signal (typically generated by a preceding DAC) are respectively replaced by two arrays (24A, 24B) of smaller NFET devices connected in parallel. The gate of each NFET device of the first array is driven by a bit (c0, c1, . . . ) of the true phase of the digital signal. The gate of each NFET device of the second array is driven by a bit (c0, c1, . . . ) of the complementary phase of the digital signal.

Abstract: A semiconductor structure for making four device SRAMs with stacked polysilicon load resistors (4D/2R SRAM cells) in CMOS FET technology. The structure is formed from a semiconductor substrate with active regions of devices therein and polysilicon lines formed thereupon. A first thick passivating layer is formed of an etch stop layer and a layer of phosphosilicate glass (PSG) above the substrate. A set of first metal contact studs through the first thick passivating layer contacts at least one of the active regions and/or the polysilicon lines. The etch stop layer (26) may be of intrinsic polysilicon or Al.sub.2 O.sub.3. The top surface of the first contact studs is coplanar with the top surface of the first thick passivating layers. A plurality of polysilicon lands formed on the planar structure contact the first contact studs. The polysilicon lands are highly resistive, highly conductive or a mix thereof.

Abstract: A method of forming thin film pseudo-planar polysilicon gate PFETs (pPFETs) simultaneously with bulk PFET and NFET devices in a CMOS or BiCMOS semiconductor structure, comprising the steps of: providing a P-type silicon substrate having a surface that includes a plurality of isolation regions; delineating polysilicon lands at selected isolation regions; forming N-well regions into the substrate at a location where bulk PFETs are to be subsequently formed; forming insulator encapsulated conductive polysilicon studs to provide gate electrodes at desired locations of the structure; forming self-aligned source/drain regions of the bulk NFETs into the substrate; forming self-aligned source/drain regions of the bulk PFETs and pPFETs into the substrate and into the polysilicon lands, respectively; and forming contact regions to the selected locations that include the source/drain regions.

Abstract: A semiconductor structure including: a semiconductor substrate (18/19) having active regions (21) of devices (T1, . . . ) therein and/or polysilicon lines (23-1, . . .) formedthereupon; a first thick passivating layer (26/27) formed above the substrate having a set of first metal contact studs (30-1, . . .) therein contacting at least one of the active regions (21) and/or the polysilicon lines (23-1, . . . ); the surface of the first contact studs is coplanar with the surface of the first passivating layer; a plurality of polysilicon lands (31-1, . . .) formed on the planar structure in contact with the first contact studs; the polysilicon lands are either highly resistive, highly conductive or a mix thereof; a second thick passivating layer (34/35) formed above the resulting structure having a set of second metal contact-studs (37-1 . . .

Abstract: A manufacturing method is provided for producing a stacked semiconductor structure including: depositing a first thick passivating layer onto the base structure; forming first stud openings in the first thick passivating layer exposing at least one active region and/or one of the polysilicon lines; depositing a first layer of a conductive material to fill the first stud openings and define first contact studs, the upper part of some of the first contact studs comprising the gate electrodes of PFET devices; planarizing the structure to make the top surface of the first contact studs coplanar with the surface of the first thick passivating layer; depositing a thick insulating layer to form the gate dielectric of PFET devices and patterning it to define contact openings to expose selected first contact studs at desired locations; depositing a layer of polysilicon; patterning the polysilicon layer to define polysilicon lands containing the first contact studs at the desired locations; selectively implanting to de

Abstract: A stacked semiconductor structure including a base structure (18/19) is comprised of a semiconductor substrate having active regions (21) of devices (N1, . . . ) formed therein and/or a plurality of polysilicon lines (23-1, . . . ) formed thereupon; a first thick passivating layer (26/27) having a set of first metal contact studs (30-1, . . . ) therein contacting at least one of said active regions (21) and/or said polysilicon lines (23-1, . . . ), the surface of said first metal contact studs being coplanar with the surface of said first thick passivating layer; a plurality of first polysilicon lands (31-1, . . .