Patents by Inventor Patrick N. Breysse

Patrick N. Breysse has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9897569
    Abstract: An electronic device includes a first field effect transistor that includes a first gate electrode, a first drain electrode, and a first source electrode; a second field effect transistor that includes a second gate electrode, a second drain electrode, and a second source electrode, the first and second gate electrodes being at least one of electrically connected or integral, and the first and second source electrodes being at least one of electrically connected or integral; an input electrode electrically connected to the first and second gate electrodes; and an output electrode electrically connected to the first and second source electrodes. The first field effect transistor also includes a first semiconductor material. The second field effect transistor further also incudes a second semiconductor material.
    Type: Grant
    Filed: July 8, 2011
    Date of Patent: February 20, 2018
    Assignee: The Johns Hopkins University
    Inventors: Howard Edan Katz, Patrick N. Breysse, Bal Mukund Dhar, Noah Jonathan Tremblay
  • Publication number: 20130115136
    Abstract: An electronic device includes a first field effect transistor that includes a first gate electrode, a first drain electrode, and a first source electrode; a second field effect transistor that includes a second gate electrode, a second drain electrode, and a second source electrode, the first and second gate electrodes being at least one of electrically connected or integral, and the first and second source electrodes being at least one of electrically connected or integral; an input electrode electrically connected to the first and second gate electrodes; and an output electrode electrically connected to the first and second source electrodes. The first field effect transistor also includes a first semiconductor material. The second field effect transistor further also incudes a second semiconductor material.
    Type: Application
    Filed: July 8, 2011
    Publication date: May 9, 2013
    Applicant: The Johns Hopkins University
    Inventors: Howard Edan Katz, Patrick N. Breysse, Mukund Bal Dhar, Jonathan Noah Tremblay