Abstract: Embodiments of the invention include a semiconductor light emitting device capable of emitting first light having a first peak wavelength and a semiconductor wavelength converting element capable of absorbing the first light and emitting second light having a second peak wavelength. The semiconductor wavelength converting element is attached to a support and disposed in a path of light emitted by the semiconductor light emitting device. The semiconductor wavelength converting element is patterned to include at least two first regions of semiconductor wavelength converting material and at least one second region without semiconductor wavelength converting material disposed between the at least two first regions.

Abstract: Embodiments of the invention include a III-nitride light emitting layer disposed between an n-type region and a p-type region, a III-nitride layer including a nanopipe defect, and a nanopipe terminating layer disposed between the III-nitride light emitting layer and the III-nitride layer comprising a nanopipe defect. The nanopipe terminates in the nanopipe terminating layer.

Abstract: Embodiments of the invention include a III-nitride light emitting layer disposed between an n-type region and a p-type region, a III-nitride layer including a nanopipe defect, and a nanopipe terminating layer disposed between the III-nitride light emitting layer and the III-nitride layer comprising a nanopipe defect. The nanopipe terminates in the nanopipe terminating layer.

Abstract: Embodiments of the invention include a III-nitride light emitting layer disposed between an n-type region and a p-type region, a III-nitride layer including a nanopipe defect, and a nanopipe terminating layer disposed between the III-nitride light emitting layer and the III-nitride layer comprising a nanopipe defect. The nanopipe terminates in the nanopipe terminating layer.

Abstract: Embodiments of the invention include a semiconductor light emitting device capable of emitting first light having a first peak wavelength and a semiconductor wavelength converting element capable of absorbing the first light and emitting second light having a second peak wavelength. The semiconductor wavelength converting element is attached to a support and disposed in a path of light emitted by the semiconductor light emitting device. The semiconductor wavelength converting element is patterned to include at least two first regions of semiconductor wavelength converting material and at least one second region without semiconductor wavelength converting material disposed between the at least two first regions.

Abstract: Embodiments of the invention include a semiconductor light emitting device capable of emitting first light having a first peak wavelength and a semiconductor wavelength converting element capable of absorbing the first light and emitting second light having a second peak wavelength. The semiconductor wavelength converting element is attached to a support and disposed in a path of light emitted by the semiconductor light emitting device. The semiconductor wavelength converting element is patterned to include at least two first regions of semiconductor wavelength converting material and at least one second region without semiconductor wavelength converting material disposed between the at least two first regions.

Abstract: Embodiments of the invention include a III-nitride light emitting layer disposed between an n-type region and a p-type region, a III-nitride layer including a nanopipe defect, and a nanopipe terminating layer disposed between the III-nitride light emitting layer and the III-nitride layer comprising a nanopipe defect. The nanopipe terminates in the nanopipe terminating layer.

Abstract: Embodiments of the invention include a III-nitride light emitting layer disposed between an n-type region and a p-type region, a III-nitride layer including a nanopipe defect, and a nanopipe terminating layer disposed between the III-nitride light emitting layer and the III-nitride layer comprising a nanopipe defect. The nanopipe terminates in the nanopipe terminating layer.

Abstract: Embodiments of the invention include a III-nitride light emitting layer disposed between an n-type region and a p-type region, a III-nitride layer including a nanopipe defect, and a nanopipe terminating layer disposed between the III-nitride light emitting layer and the III-nitride layer comprising a nanopipe defect. The nanopipe terminates in the nanopipe terminating layer.

Abstract: Embodiments of the invention include a semiconductor light emitting device capable of emitting first light having a first peak wavelength and a semiconductor wavelength converting element capable of absorbing the first light and emitting second light having a second peak wavelength. The semiconductor wavelength converting element is attached to a support and disposed in a path of light emitted by the semiconductor light emitting device. The semiconductor wavelength converting element is patterned to include at least two first regions of semiconductor wavelength converting material and at least one second region without semiconductor wavelength converting material disposed between the at least two first regions.

Abstract: Embodiments of the invention include a semiconductor light emitting device (10) capable of emitting first light having a first peak wavelength and a semiconductor wavelength converting element (12) capable of absorbing the first light and emitting second light having a second peak wavelength. The semiconductor wavelength converting element (12) is attached to a support (51) and disposed in a path of light emitted by the semiconductor light emitting device. The semiconductor wavelength converting element is patterned to include at least two first regions (46) of semiconductor wavelength converting material and at least one second region (48) without semiconductor wavelength converting material disposed between the at least two first regions.

Abstract: Embodiments of the invention include a III-nitride light emitting layer disposed between an n-type region and a p-type region, a III-nitride layer including a nanopipe defect, and a nanopipe terminating layer disposed between the III-nitride light emitting layer and the III-nitride layer comprising a nanopipe defect. The nanopipe terminates in the nanopipe terminating layer.

Abstract: Embodiments of the invention include a III-nitride light emitting layer disposed between an n-type region and a p-type region, a III-nitride layer including a nanopipe defect, and a nanopipe terminating layer disposed between the III-nitride light emitting layer and the III-nitride layer comprising a nanopipe defect. The nanopipe terminates in the nanopipe terminating layer.

Abstract: Embodiments of the invention include a semiconductor light emitting device (10) capable of emitting first light having a first peak wavelength and a semiconductor wavelength converting element (12) capable of absorbing the first light and emitting second light having a second peak wavelength. The semiconductor wavelength converting element (12) is attached to a support (51) and disposed in a path of light emitted by the semiconductor light emitting device. The semiconductor wavelength converting element is patterned to include at least two first regions (46) of semiconductor wavelength converting material and at least one second region (48) without semiconductor wavelength converting material disposed between the at least two first regions.