Patents by Inventor Patrick Poveda
Patrick Poveda has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11664367Abstract: A protection device includes a first inductive element connecting first and second terminals and a second inductive element connecting third and fourth terminals. A first component includes a first avalanche diode connected in parallel with a first diode string, anodes of the first avalanche diode and a last diode in the string being connected to ground, cathodes of the first avalanche diode and a first diode in the string being connected, and a tap of the first diode string being connected to the first terminal. A second protection component includes a second avalanche diode connected in parallel with a second diode string, anodes of the second avalanche diode and a last diode in the string being connected to ground, cathodes of the second avalanche diode and a first diode in the string being connected, and a tap of the second diode string being connected to the third terminal.Type: GrantFiled: April 11, 2022Date of Patent: May 30, 2023Assignee: STMicroelectronics (Tours) SASInventor: Patrick Poveda
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Publication number: 20220238507Abstract: A protection device includes a first inductive element connecting first and second terminals and a second inductive element connecting third and fourth terminals. A first component includes a first avalanche diode connected in parallel with a first diode string, anodes of the first avalanche diode and a last diode in the string being connected to ground, cathodes of the first avalanche diode and a first diode in the string being connected, and a tap of the first diode string being connected to the first terminal. A second protection component includes a second avalanche diode connected in parallel with a second diode string, anodes of the second avalanche diode and a last diode in the string being connected to ground, cathodes of the second avalanche diode and a first diode in the string being connected, and a tap of the second diode string being connected to the third terminal.Type: ApplicationFiled: April 11, 2022Publication date: July 28, 2022Applicant: STMicroelectronics (Tours) SASInventor: Patrick POVEDA
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Patent number: 11329040Abstract: An electronic component includes first and second separate semiconductor regions. A third semiconductor region is arranged under and between the first and second semiconductor regions. The first and third semiconductor regions define electrodes of a first diode. The second and third semiconductor regions define electrodes of a second diode. The first diode is an avalanche diode.Type: GrantFiled: March 20, 2019Date of Patent: May 10, 2022Assignee: STMicroelectronics (Tours) SASInventor: Patrick Poveda
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Publication number: 20190296005Abstract: An electronic component includes first and second separate semiconductor regions. A third semiconductor region is arranged under and between the first and second semiconductor regions. The first and third semiconductor regions define electrodes of a first diode. The second and third semiconductor regions define electrodes of a second diode. The first diode is an avalanche diode.Type: ApplicationFiled: March 20, 2019Publication date: September 26, 2019Applicant: STMicroelectronics (Tours) SASInventor: Patrick POVEDA
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Patent number: 9463867Abstract: A device for attaching overheating detection cords, in particular to a pipe for hot gases drawn from the engine of an aircraft, including a bracket with slots into which the cords, surrounded by silicone coils, are placed. Overhanging portions on the edges of the slots and flanges projecting from the base of the slots hold the coils against accidental extraction forces.Type: GrantFiled: January 22, 2015Date of Patent: October 11, 2016Assignee: AIRBUS OPERATIONS (S.A.S.)Inventors: Maxime Langlade, Guillaume Sabathe, Patrick Poveda
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Publication number: 20150214702Abstract: A device for attaching overheating detection chords, in particular to a pipe for hot gases drawn from the engine of an aircraft, including a bracket in slots in which are placed silicone coils surrounding the cord at this point. Overhanging portions on the edges of the slots and flanges projecting from the base of the slots then hold the coils against accidental extraction forces.Type: ApplicationFiled: January 22, 2015Publication date: July 30, 2015Inventors: Maxime LANGLADE, Guillaume SABATHE, Patrick POVEDA
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Patent number: 8269252Abstract: A structure including at least two neighboring components, capable of operating at high frequencies, formed in a thin silicon substrate extending on a silicon support and separated therefrom by an insulating layer, the components being laterally separated by insulating regions. The silicon support has, at least in the vicinity of its portion in contact with the insulating layer, a resistivity greater than or equal to 1,000 ohms.cm.Type: GrantFiled: March 31, 2008Date of Patent: September 18, 2012Assignee: STMicroelectronics S.A.Inventors: Jean-Michel Simonnet, André Lhorte, Patrick Poveda
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Patent number: 7820494Abstract: A method for forming a component of TMBS type having its periphery formed of a trench with insulated walls filled with a conductor, including the steps of depositing on a semiconductor substrate a thick layer of a first insulating material and a thin layer of a second material; simultaneously digging a peripheral trench and the trenches of the component; isotropically etching the first material so that a cap overhanging a recess remains; forming a thin insulating layer; and filling the trenches and said recess with a conductive material.Type: GrantFiled: March 2, 2007Date of Patent: October 26, 2010Assignee: STMicroelectronics S.A.Inventor: Patrick Poveda
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Publication number: 20100187650Abstract: A structure including at least one electronic component formed in a semiconductor stack comprising a heavily-doped buried silicon layer of a first conductivity type extending on a lightly-doped silicon substrate of a second conductivity type and a vertical insulating trench surrounding the component. The trench penetrates, into the silicon substrate, under the silicon layer, down to a depth greater than the thickness of the space charge region in the silicon substrate.Type: ApplicationFiled: January 20, 2010Publication date: July 29, 2010Applicant: STMicroelectronics (Tours) SASInventors: Patrick Poveda, Benjamin Morillon, Erwan Bruno
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Patent number: 7760155Abstract: A non-directional coupler including a semiconductor junction in series with a capacitor, the semiconductor junction being formed so that the threshold frequency short of which it behaves as a rectifier is smaller than the coupler's operating frequency.Type: GrantFiled: February 22, 2008Date of Patent: July 20, 2010Assignee: STMicroelectronics S.A.Inventors: François Dupont, Patrick Poveda
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Patent number: 7589602Abstract: An antenna switch module between several radio-frequency transmit and/or receive paths including, between a common terminal on the antenna side and an access capacitor specific to each path, at least one diode, the number of diodes directly connected to the common terminal being odd and the number of diodes having their cathode on the common terminal side being equal, with a difference of one, to the number of diodes having their anode on the common terminal side.Type: GrantFiled: July 21, 2006Date of Patent: September 15, 2009Assignee: STMicroelectronics S.A.Inventors: Patrick Poveda, Francois Dupont
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Patent number: 7507620Abstract: A vertical diode of low capacitance formed in a front surface of a semiconductor substrate, including a first area protruding from the substrate surface including at least one doped semiconductor layer of a conductivity type opposite to that of the substrate, the upper surface of the semiconductor layer supporting a first welding ball. The diode includes a second area including on the substrate a thick conductive track supporting at least two second welding balls, said first and second welding balls defining a plane parallel to the substrate plane.Type: GrantFiled: June 23, 2005Date of Patent: March 24, 2009Assignee: STMicroelectronics S.A.Inventors: Emmanuel Collard, Patrick Poveda
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Publication number: 20080237785Abstract: A structure including at least two neighboring components, capable of operating at high frequencies, formed in a thin silicon substrate extending on a silicon support and separated therefrom by an insulating layer, the components being laterally separated by insulating regions. The silicon support has, at least in the vicinity of its portion in contact with the insulating layer, a resistivity greater than or equal to 1,000 ohms.cm.Type: ApplicationFiled: March 31, 2008Publication date: October 2, 2008Applicant: STMicroelectronics S.A.Inventors: Jean-Michel Simonnet, Andre Lhorte, Patrick Poveda
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Publication number: 20080158090Abstract: A non-directional coupler including a semiconductor junction in series with a capacitor, the semiconductor junction being formed so that the threshold frequency short of which it behaves as a rectifier is smaller than the coupler's operating frequency.Type: ApplicationFiled: February 22, 2008Publication date: July 3, 2008Applicant: STMicroelectronics S.A.Inventors: Francois Dupont, Patrick Poveda
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Patent number: 7375603Abstract: A non-directional coupler including a semiconductor junction in series with a capacitor, the semiconductor junction being formed so that the threshold frequency short of which it behaves as a rectifier is smaller than the coupler's operating frequency.Type: GrantFiled: September 24, 2004Date of Patent: May 20, 2008Assignee: STMicroelectronics S.A.Inventors: François Dupont, Patrick Poveda
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Publication number: 20070222018Abstract: A method for forming a component of TMBS type having its periphery formed of a trench with insulated walls filled with a conductor, including the steps of depositing on a semiconductor substrate a thick layer of a first insulating material and a thin layer of a second material; simultaneously digging a peripheral trench and the trenches of the component; isotropically etching the first material so that a cap overhanging a recess remains; forming a thin insulating layer; and filling the trenches and said recess with a conductive material.Type: ApplicationFiled: March 2, 2007Publication date: September 27, 2007Applicant: STMicroelectronics S.A.Inventor: Patrick Poveda
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Publication number: 20070018753Abstract: An antenna switch module between several radio-frequency transmit and/or receive paths including, between a common terminal on the antenna side and an access capacitor specific to each path, at least one diode, the number of diodes directly connected to the common terminal being odd and the number of diodes having their cathode on the common terminal side being equal, with a difference of one, to the number of diodes having their anode on the common terminal side.Type: ApplicationFiled: July 21, 2006Publication date: January 25, 2007Applicant: STMicroelectronics S.A.Inventors: Patrick Poveda, Francois Dupont
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Patent number: 7005725Abstract: An electric component comprising an assembly of two PIN diodes in series formed in a semiconductor substrate layer separated from a support layer by an insulating layer, the doped areas forming the electrodes of each diode having a depth equal to that of the substrate layer, the component including a first area of a first doping type surrounded with a second intrinsic area, itself surrounded with a third area of a second doping type, the third area being surrounded with a fourth area of the first doping type, the fourth area being surrounded with a fifth intrinsic area, itself surrounded with a sixth area of the second doping type, the third and fourth areas being covered and connected by a metal area, each of the first and sixth areas being connected to a contact pad on which rests a welding ball.Type: GrantFiled: December 23, 2003Date of Patent: February 28, 2006Assignee: STMicroelectronics S.A.Inventor: Patrick Poveda
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Publication number: 20060037998Abstract: The present invention relates to a thermally-controlled actuator device of the type comprising a body, a part held stationary relative to the body by a low-melting point connection material, e.g. brazing or equivalent means, and a mass of exothermic material suitable for acting on command to give off intense heat energy suitable for melting the connection material so as to release the part relative to the body, wherein the exothermic material is housed in a chamber that is subdivided into a plurality of compartments suitable for confining said material in close thermal contact with the wall of the chamber.Type: ApplicationFiled: October 21, 2005Publication date: February 23, 2006Inventors: Stephane Crabol, Guy Valembois, Patrick Poveda
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Patent number: 6979852Abstract: A variable capacitance formed in a semiconductor substrate with a ribbed surface, having a first electrode formed of all the ribs protruding from the substrate, of portions of the substrate underlying the ribs, and of at least portions of the substrate separating the bases of two ribs, having a second electrode superposed to at least one portion of the first electrode. The ribs are irregular in terms of cross-section and/or planar base surface area.Type: GrantFiled: September 23, 2003Date of Patent: December 27, 2005Assignee: STMicroelectronics S.A.Inventor: Patrick Poveda