Abstract: A method for implementing a scanning electron microscopy characterisation technique for the determination of at least one critical dimension of the structure of a sample in the field of dimensional metrology, known as CD-SEM technique, includes producing an experimental image; from a first theoretical model based on parametric mathematical functions, calculating a second theoretical model U(Pi,ti) describing the signal measured at the position Pi at the instant ti, the second model U(Pi,ti) being obtained by algebraic summation of a corrective term S(Pi,ti); determining the set of parameters present in the second theoretical model; wherein the corrective term S(Pi,ti) is calculated by summing the signal coming from the electric charges deposited by the primary electron beam at a plurality of instants t less than or equal to ti.

Abstract: A method for implementing a scanning electron microscopy characterisation technique for the determination of at least one critical dimension of the structure of a sample in the field of dimensional metrology, known as CD-SEM technique, the method including producing an experimental image representative of the structure of the sample and derived from a scanning electron microscope, from a first theoretical model based on parametric mathematical functions, calculating a second theoretical model obtained by algebraic summation of a corrective term, the corrective term being the convolution product between a given convolution kernel and the first theoretical model, the second theoretical model comprising a set of parameters to determine, and determining the set of parameters present in the second theoretical model by means of an adjustment between the second theoretical model and the experimental image.

Abstract: An e-beam lithography process includes the following steps: implanting into a substrate, or into a dielectric layer deposited on the surface of the substrate, electrons in a first pattern; depositing an e-beam resist on the surface of the substrate or of the sacrificial dielectric layer; and exposing the resist by means of an electron beam in a second pattern, then developing the resist; the first and second patterns being made up of elementary patterns, the elementary patterns of the first pattern at least partially surrounding the elementary patterns of the second pattern.