Patents by Inventor Patrick R. Koons

Patrick R. Koons has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 4297149
    Abstract: The breakdown voltage of high voltage semiconductor devices passivated with SiPOS deteriorates if the devices are allowed to soak at temperatures in the 400.degree. C. to 525.degree. C. range. The original breakdown voltage is recovered by annealing the devices at a temperature of above about 550.degree. C. prior to metallization and alloying the metal at less than 425.degree. C.
    Type: Grant
    Filed: May 5, 1980
    Date of Patent: October 27, 1981
    Assignee: RCA Corporation
    Inventors: Patrick R. Koons, John M. S. Neilson