Patents by Inventor Patrick Robert Smith

Patrick Robert Smith has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Isolated well contact in semiconductor devices
    Patent number: 10593752
    Abstract: An integrated circuit and method has an isolated well with an improved isolated well contact. The well contact diffusion is isolated from a device diffusion of opposite conductivity type within the isolated well by an isolation transistor gate.
    Type: Grant
    Filed: June 28, 2017
    Date of Patent: March 17, 2020
    Assignee: Texas Instruments Incorporated
    Inventors: Bruce Lynn Pickelsimer, Patrick Robert Smith, Terry James Bordelon, Jr.
  • ISOLATED WELL CONTACT IN SEMICONDUCTOR DEVICES
    Publication number: 20170301754
    Abstract: An integrated circuit and method has an isolated well with an improved isolated well contact. The well contact diffusion is isolated from a device diffusion of opposite conductivity type within the isolated well by an isolation transistor gate.
    Type: Application
    Filed: June 28, 2017
    Publication date: October 19, 2017
    Inventors: Bruce Lynn Pickelsimer, Patrick Robert Smith, Terry James Bordelon, JR.
  • Isolated well contact in semiconductor devices
    Patent number: 9722021
    Abstract: An integrated circuit and method has an isolated well with an improved isolated well contact. The well contact diffusion is isolated from a device diffusion of opposite conductivity type within the isolated well by an isolation transistor gate.
    Type: Grant
    Filed: September 2, 2015
    Date of Patent: August 1, 2017
    Assignee: TEXAS INSTRUMENTS INCORPORATED
    Inventors: Bruce Lynn Pickelsimer, Patrick Robert Smith, Terry James Bordelon, Jr.
  • Methods and apparatus to track bit cell current using temperature and voltage dependent reference currents
    Patent number: 9691491
    Abstract: An example method to track bit cell current in a memory architecture. An example method disclosed herein includes generating a first reference current dependent on bit cell temperature. The example method includes generating a second reference current dependent on bit cell voltage and supplying a third reference current of constant magnitude. In examples disclosed herein, the example method involves summing the first reference current, the second reference current, and the third reference current. The example method includes determining, with a sense amplifier, a bit cell logic state based on the first reference current, the second reference current, and the third reference current.
    Type: Grant
    Filed: September 18, 2015
    Date of Patent: June 27, 2017
    Assignee: TEXAS INSTRUMENTS INCORPORATED
    Inventors: Kurt Stephen Schwartz, Patrick Robert Smith
  • METHODS AND APPARATUS TO TRACK BIT CELL CURRENT USING TEMPERATURE AND VOLTAGE DEPENDENT REFERENCE CURRENTS
    Publication number: 20170084343
    Abstract: An example method to track bit cell current in a memory architecture. An example method disclosed herein includes generating a first reference current dependent on bit cell temperature. The example method includes generating a second reference current dependent on bit cell voltage and supplying a third reference current of constant magnitude. In examples disclosed herein, the example method involves summing the first reference current, the second reference current, and the third reference current. The example method includes determining, with a sense amplifier, a bit cell logic state based on the first reference current, the second reference current, and the third reference current.
    Type: Application
    Filed: September 18, 2015
    Publication date: March 23, 2017
    Inventors: Kurt Stephen SCHWARTZ, Patrick Robert SMITH
  • ISOLATED WELL CONTACT IN SEMICONDUCTOR DEVICES
    Publication number: 20170062558
    Abstract: An integrated circuit and method has an isolated well with an improved isolated well contact. The well contact diffusion is isolated from a device diffusion of opposite conductivity type within the isolated well by an isolation transistor gate.
    Type: Application
    Filed: September 2, 2015
    Publication date: March 2, 2017
    Inventors: Bruce Lynn Pickelsimer, Patrick Robert Smith, Terry James Bordelon, JR.